IXFN64N50PD2
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- Mfr.Part #
- IXFN64N50PD2
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 52A SOT-227B
- Stock
- 48,078
- In Stock ：
- 48,078
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Weight :
- 38.000013g
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation (Max) :
- 625W (Tc)
- RoHS Status :
- ROHS3 Compliant
- Series :
- PolarHV™
- Terminal Position :
- UPPER
- Packaging :
- Tube
- Number of Terminations :
- 4
- Package Shape :
- RECTANGULAR
- Input Capacitance (Ciss) (Max) @ Vds :
- 11000pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 52A Tc
- JESD-30 Code :
- R-PUFM-X4
- FET Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Case Connection :
- Isolated
- Drain to Source Voltage (Vdss) :
- 500V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation-Max (Abs) :
- 625 W
- Continuous Drain Current (ID) :
- 52A
- Drain Current-Max (Abs) (ID) :
- 50A
- Gate Charge (Qg) (Max) @ Vgs :
- 186nC @ 10V
- Package / Case :
- SOT-227-4, miniBLOC
- FET Feature :
- --
- Number of Elements :
- 1
- Terminal Form :
- UNSPECIFIED
- Terminal Finish :
- Nickel (Ni)
- Pin Count :
- 4
- Supplier Device Package :
- SOT-227B
- Surface Mount :
- No
- Number of Terminals :
- 4
- Vgs (Max) :
- ±30V
- Number of Pins :
- 4
- Manufacturer :
- IXYS Corporation
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Base Product Number :
- IXFN64
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Mounting Type :
- Chassis Mount
- Drain-source On Resistance-Max :
- 0.085Ohm
- Reach Compliance Code :
- Compliant
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Power Dissipation-Max :
- 625W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Mount :
- Chassis Mount
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- DS Breakdown Voltage-Min :
- 500V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Published :
- 2006
- Polarity/Channel Type :
- N-Channel
- Qualification Status :
- Not Qualified
- Rds On (Max) @ Id, Vgs :
- 85m Ω @ 32A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Package :
- Tube
- Pulsed Drain Current-Max (IDM) :
- 200A
- Product Status :
- Obsolete
- Pbfree Code :
- yes
- Datasheets
- IXFN64N50PD2
N-Channel Tube 85m Ω @ 32A, 10V ±30V 11000pF @ 25V 186nC @ 10V 500V SOT-227-4, miniBLOC
IXFN64N50PD2 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 11000pF @ 25V.This device conducts a continuous drain current (ID) of 52A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 50A.Pulsed drain current is maximum rated peak drain current 200A.A normal operation of the DS requires keeping the breakdown voltage above 500V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFN64N50PD2 Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 52A
based on its rated peak drain current 200A.
a 500V drain to source voltage (Vdss)
IXFN64N50PD2 Applications
There are a lot of IXYS
IXFN64N50PD2 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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