IXFN64N50P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

61A

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Manufacturer :

IXYS

Reach Compliance Code :

Compliant

ECCN Code :

EAR99

Case Connection :

Isolated

Terminal Position :

UPPER

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

Number of Terminations :

4

Vgs(th) (Max) @ Id :

5.5V @ 8mA

RoHS :

Details

Base Product Number :

IXFN64

Turn On Delay Time :

30 ns

Package / Case :

SOT-227-4, miniBLOC

Drive Voltage (Max Rds On,Min Rds On) :

10V

DS Breakdown Voltage-Min :

500 V

Voltage - Rated DC :

500V

Mounting Type :

Chassis Mount

Rds On (Max) @ Id, Vgs :

85m Ω @ 32A, 10V

Pbfree Code :

yes

Configuration :

Single

FET Type :

N-Channel

Rise Time :

25ns

Brand :

IXYS

Package :

Tube

Mounting Style :

Screw Mounts

Height :

9.6mm

Product Category :

Discrete Semiconductor Modules

Pin Count :

4

Number of Pins :

4

Element Configuration :

Single

Qualification Status :

Not Qualified

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Fall Time (Typ) :

22 ns

Drain to Source Breakdown Voltage :

500V

Pulsed Drain Current-Max (IDM) :

150 A

Power Dissipation-Max (Abs) :

625 W

Product Type :

Discrete Semiconductor Modules

Channel Type :

N

Minimum Operating Temperature :

-55 °C

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Resistance :

85mOhm

Mount :

Chassis Mount, Panel, Screw

Number of Channels :

1 Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Product :

Power MOSFET Modules

Transistor Polarity :

N-Channel

Factory Lead Time :

30 Weeks

Supplier Device Package :

SOT-227B

Surface Mount :

No

Type :

HiPerFET

Length :

38.23mm

Maximum Operating Temperature :

+150 °C

Current Rating :

64A

JESD-30 Code :

R-PUFM-X4

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Lead Free :

Lead Free

FET Feature :

--

Input Capacitance (Ciss) (Max) @ Vds :

8700pF @ 25V

Package Shape :

RECTANGULAR

Turn-Off Delay Time :

85 ns

Number of Elements per Chip :

1

Operating Mode :

ENHANCEMENT MODE

Polarity/Channel Type :

N-Channel

Threshold Voltage :

5.5V

Power Dissipation :

700W

Tradename :

HiPerFET

Power Dissipation-Max :

700W Tc

Current - Continuous Drain (Id) @ 25°C :

61A Tc

Number of Terminals :

4

Number of Elements :

1

Drain to Source Voltage (Vdss) :

500V

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

30V

Power Dissipation (Max) :

700W (Tc)

Radiation Hardening :

No

Width :

25.42mm

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.085 Ω

Terminal Finish :

Nickel (Ni)

Terminal Form :

UNSPECIFIED

Avalanche Energy Rating (Eas) :

2500 mJ

Channel Mode :

Enhancement

Package Type :

SOT-227

Product Status :

Active

Drain Current-Max (Abs) (ID) :

50A

Packaging :

Tube

Published :

2003

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

PolarHV™