IXFN62N80Q3
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- Mfr.Part #
- IXFN62N80Q3
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 49A SOT227B
- Stock
- 6
- In Stock ：
- 6
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Chassis Mount
- Power Dissipation :
- 960W
- Vgs(th) (Max) @ Id :
- 6.5V @ 8mA
- Rds On (Max) @ Id, Vgs :
- 140m Ω @ 31A, 10V
- Number of Elements :
- 1
- Length :
- 38.23mm
- Width :
- 25.07mm
- Drain to Source Breakdown Voltage :
- 800V
- Base Product Number :
- IXFN62
- Factory Lead Time :
- 30 Weeks
- Pulsed Drain Current-Max (IDM) :
- 180A
- Qualification Status :
- Not Qualified
- Power Dissipation-Max :
- 960W Tc
- Brand :
- IXYS
- Number of Terminations :
- 4
- Published :
- 2012
- Operating Temperature :
- -55°C~150°C TJ
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Element Configuration :
- Single
- Number of Pins :
- 4
- Resistance :
- 140mOhm
- Number of Channels :
- 1 Channel
- RoHS :
- Details
- Manufacturer :
- IXYS
- Additional Feature :
- UL RECOGNIZED
- Rise Time :
- 300ns
- Product Status :
- Active
- Mounting Style :
- Screw Mounts
- Product Type :
- Discrete Semiconductor Modules
- FET Feature :
- --
- Mount :
- Chassis Mount, Panel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±30V
- Product Category :
- Discrete Semiconductor Modules
- Packaging :
- Tube
- FET Type :
- N-Channel
- Configuration :
- Single
- Package :
- Tube
- Series :
- HiPerFET™
- Package / Case :
- SOT-227-4, miniBLOC
- Tradename :
- HiPerFET
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- UPPER
- Terminal Form :
- UNSPECIFIED
- Gate to Source Voltage (Vgs) :
- 30V
- Transistor Application :
- SWITCHING
- Maximum Operating Temperature :
- + 150 C
- Transistor Element Material :
- SILICON
- Turn On Delay Time :
- 54 ns
- Product :
- Power MOSFET Modules
- Turn-Off Delay Time :
- 62 ns
- Transistor Polarity :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation (Max) :
- 960W (Tc)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Case Connection :
- Isolated
- Type :
- HiPerFET
- Gate Charge (Qg) (Max) @ Vgs :
- 270nC @ 10V
- Continuous Drain Current (ID) :
- 49A
- Reach Compliance Code :
- Unknown
- Supplier Device Package :
- SOT-227B
- Minimum Operating Temperature :
- - 55 C
- Pin Count :
- 4
- Current - Continuous Drain (Id) @ 25°C :
- 49A Tc
- Lead Free :
- Lead Free
- Height :
- 9.6mm
- Drain to Source Voltage (Vdss) :
- 800V
- Input Capacitance (Ciss) (Max) @ Vds :
- 13600pF @ 25V
- Datasheets
- IXFN62N80Q3
N-Channel Tube 140m Ω @ 31A, 10V ±30V 13600pF @ 25V 270nC @ 10V 800V SOT-227-4, miniBLOC
IXFN62N80Q3 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 5000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 13600pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 49A.With a drain-source breakdown voltage of 800V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 800V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 62 ns.Peak drain current for this device is 180A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 54 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 800V.Using drive voltage (10V) reduces this device's overall power consumption.
IXFN62N80Q3 Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 49A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 180A.
a 800V drain to source voltage (Vdss)
IXFN62N80Q3 Applications
There are a lot of IXYS
IXFN62N80Q3 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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