IXFN60N80P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

800V

Number of Pins :

4

Polarity/Channel Type :

N-Channel

Series :

PolarHV™

Continuous Drain Current (ID) :

53A

Factory Lead Time :

30 Weeks

Power Dissipation (Max) :

1040W (Tc)

Base Product Number :

IXFN60

Number of Terminals :

4

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 10V

Package / Case :

SOT-227-4, miniBLOC

Drain to Source Voltage (Vdss) :

800V

REACH SVHC :

No SVHC

Product Type :

Discrete Semiconductor Modules

Brand :

IXYS

Radiation Hardening :

No

Pbfree Code :

yes

Turn-Off Delay Time :

110 ns

Package :

Tube

Case Connection :

Isolated

Input Capacitance (Ciss) (Max) @ Vds :

18000pF @ 25V

Drain-source On Resistance-Max :

0.14 Ω

Surface Mount :

No

Product Category :

Discrete Semiconductor Modules

Rise Time :

29ns

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Number of Elements per Chip :

1

Gate to Source Voltage (Vgs) :

30V

Width :

25.42mm

Current - Continuous Drain (Id) @ 25°C :

53A Tc

Number of Terminations :

4

Vgs (Max) :

±30V

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Type :

HiPerFET

Terminal Finish :

Nickel (Ni)

Transistor Element Material :

SILICON

Mount :

Chassis Mount, Panel, Screw

Number of Channels :

1 Channel

Tradename :

HiPerFET

Reach Compliance Code :

Compliant

Terminal Form :

UNSPECIFIED

Power Dissipation :

1.04kW

Vgs(th) (Max) @ Id :

5V @ 8mA

RoHS Status :

ROHS3 Compliant

Channel Type :

N

Avalanche Energy Rating (Eas) :

5000 mJ

Published :

2003

Threshold Voltage :

5V

Manufacturer :

IXYS

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Product Status :

Active

ECCN Code :

EAR99

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Minimum Operating Temperature :

-55 °C

Package Type :

SOT-227

Turn On Delay Time :

36 ns

Pin Count :

4

Product :

Power MOSFET Modules

JESD-30 Code :

R-PUFM-X4

Configuration :

Single

Package Shape :

RECTANGULAR

Length :

38.23mm

RoHS :

Details

Supplier Device Package :

SOT-227B

Subcategory :

Discrete Semiconductor Modules

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Channel Mode :

Enhancement

DS Breakdown Voltage-Min :

800 V

Terminal Position :

UPPER

Transistor Polarity :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Maximum Operating Temperature :

+150 °C

Number of Elements :

1

Mounting Style :

Screw Mounts

Mounting Type :

Chassis Mount

Fall Time (Typ) :

26 ns

Power Dissipation-Max :

1040W Tc

Height :

9.6mm

Additional Feature :

AVALANCHE RATED

Rds On (Max) @ Id, Vgs :

140m Ω @ 30A, 10V

Qualification Status :

Not Qualified

Packaging :

Tube

FET Feature :

--

Pulsed Drain Current-Max (IDM) :

250A