IXFN60N80P
- Mfr.Part #
- IXFN60N80P
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 53A SOT-227B
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS :
- Details
- Power Dissipation-Max :
- 1040W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 250nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Polarity :
- N-Channel
- Height :
- 9.6mm
- Lead Free :
- Lead Free
- Additional Feature :
- AVALANCHE RATED
- Factory Lead Time :
- 30 Weeks
- Pin Count :
- 4
- Pbfree Code :
- yes
- Reach Compliance Code :
- Compliant
- FET Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 800 V
- Package / Case :
- SOT-227-4, miniBLOC
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Turn On Delay Time :
- 36 ns
- Polarity/Channel Type :
- N-Channel
- Product Category :
- Discrete Semiconductor Modules
- Manufacturer :
- IXYS
- Qualification Status :
- Not Qualified
- Drain to Source Breakdown Voltage :
- 800V
- Type :
- HiPerFET
- Input Capacitance (Ciss) (Max) @ Vds :
- 18000pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 140m Ω @ 30A, 10V
- Rise Time :
- 29ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Form :
- UNSPECIFIED
- Drain-source On Resistance-Max :
- 0.14 Ω
- ECCN Code :
- EAR99
- Power Dissipation (Max) :
- 1040W (Tc)
- Mounting Type :
- Chassis Mount
- Product Type :
- Discrete Semiconductor Modules
- Terminal Finish :
- Nickel (Ni)
- Package Shape :
- RECTANGULAR
- Gate to Source Voltage (Vgs) :
- 30V
- Terminal Position :
- UPPER
- Turn-Off Delay Time :
- 110 ns
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 26 ns
- Number of Terminals :
- 4
- Continuous Drain Current (ID) :
- 53A
- Number of Elements per Chip :
- 1
- Channel Mode :
- Enhancement
- Drain to Source Voltage (Vdss) :
- 800V
- Surface Mount :
- No
- Minimum Operating Temperature :
- -55 °C
- Product Status :
- Active
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Vgs (Max) :
- ±30V
- FET Feature :
- --
- REACH SVHC :
- No SVHC
- JESD-30 Code :
- R-PUFM-X4
- Package Type :
- SOT-227
- Number of Terminations :
- 4
- Current - Continuous Drain (Id) @ 25°C :
- 53A Tc
- Product :
- Power MOSFET Modules
- Package :
- Tube
- Radiation Hardening :
- No
- Series :
- PolarHV™
- Packaging :
- Tube
- Tradename :
- HiPerFET
- Number of Pins :
- 4
- Brand :
- IXYS
- Transistor Application :
- SWITCHING
- Maximum Operating Temperature :
- +150 °C
- Channel Type :
- N
- Power Dissipation :
- 1.04kW
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2003
- Subcategory :
- Discrete Semiconductor Modules
- Pulsed Drain Current-Max (IDM) :
- 250A
- Number of Elements :
- 1
- Mount :
- Chassis Mount, Panel, Screw
- Base Product Number :
- IXFN60
- Configuration :
- Single
- Number of Channels :
- 1 Channel
- Supplier Device Package :
- SOT-227B
- Case Connection :
- Isolated
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Style :
- Screw Mounts
- Length :
- 38.23mm
- Threshold Voltage :
- 5V
- Width :
- 25.42mm
- Datasheets
- IXFN60N80P

N-Channel Tube 140m Ω @ 30A, 10V ±30V 18000pF @ 25V 250nC @ 10V 800V SOT-227-4, miniBLOC
IXFN60N80P Description
The IXFN60N80P is a PolarTM HiperFETTM Power MOSFET.
IXFN60N80P Features
-
International Standard Package
-
Low Intrinsic Gate Resistance
-
miniBLOC with Aluminum Nitride Isolation
-
Low Package Inductance
-
Fast Intrinsic Rectifier
-
Low RDS(on) and QG
IXFN60N80P Applications
-
DC-DC Converters
-
Battery Chargers
-
Switch-Mode and Resonant-Mode Power Supplies
-
AC Motor Control
-
High-Speed Power Switching Application
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