IXFN60N60

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Mfr.Part #
IXFN60N60
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 600V 60A SOT-227B
Stock
46,999
In Stock :
46,999

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Voltage (Vdss) :
600V
Product :
Power MOSFET Modules
Terminal Form :
UNSPECIFIED
Resistance :
75mOhm
Operating Temperature :
-55°C~150°C TJ
Termination :
Screw
Rds On (Max) @ Id, Vgs :
75m Ω @ 500mA, 10V
Configuration :
SINGLE WITH BUILT-IN DIODE
Number of Terminations :
4
Package Shape :
RECTANGULAR
FET Type :
N-Channel
Vgs (Max) :
±20V
Current - Continuous Drain (Id) @ 25°C :
60A Tc
ECCN Code :
EAR99
Operating Mode :
ENHANCEMENT MODE
Drain to Source Breakdown Voltage :
600V
Maximum Operating Temperature :
+ 150 C
DS Breakdown Voltage-Min :
600 V
Power Dissipation (Max) :
700W (Tc)
Drain-source On Resistance-Max :
0.08 Ω
Power Dissipation-Max :
700W Tc
Package / Case :
SOT-227-4, miniBLOC
Transistor Polarity :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
15000pF @ 25V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pulsed Drain Current-Max (IDM) :
240A
Number of Channels :
1 Channel
Continuous Drain Current (ID) :
60A
FET Feature :
--
REACH SVHC :
No SVHC
Manufacturer :
IXYS
Voltage - Rated DC :
600V
Mounting Style :
Chassis Mount
Power Dissipation :
600W
JESD-30 Code :
R-PUFM-X4
Drive Voltage (Max Rds On,Min Rds On) :
10V
Product Category :
Discrete Semiconductor Modules
Packaging :
Tube
Nominal Vgs :
4.5 V
Transistor Application :
SWITCHING
Minimum Operating Temperature :
- 55 C
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Position :
UPPER
Number of Pins :
3
Additional Feature :
AVALANCHE RATED
Surface Mount :
No
Polarity/Channel Type :
N-Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Lead Free :
Lead Free
Drain Current-Max (Abs) (ID) :
60 A
Tradename :
HyperFET
Height :
12.22 mm
Product Type :
Discrete Semiconductor Modules
Gate to Source Voltage (Vgs) :
20V
Rise Time :
52ns
Case Connection :
DRAIN
Series :
HiPerFET™
Pbfree Code :
yes
Weight :
40g
Power Dissipation-Max (Abs) :
700 W
Length :
38.23 mm
Fall Time (Typ) :
26 ns
Published :
2000
Base Product Number :
IXFN60
RoHS Status :
RoHS Compliant
Avalanche Energy Rating (Eas) :
4000 mJ
RoHS :
Details
Threshold Voltage :
4.5V
Reach Compliance Code :
Compliant
Isolation Voltage :
2.5kV
Factory Lead Time :
8 Weeks
Qualification Status :
Not Qualified
Number of Terminals :
4
Product Status :
Obsolete
Gate Charge (Qg) (Max) @ Vgs :
380nC @ 10V
Package :
Tube
Transistor Element Material :
SILICON
Turn-Off Delay Time :
110 ns
Terminal Finish :
Nickel (Ni)
Width :
25.42 mm
Pin Count :
4
Brand :
IXYS
Mounting Type :
Chassis Mount
Number of Elements :
1
Mount :
Chassis Mount
Dual Supply Voltage :
600V
Supplier Device Package :
SOT-227B
Current Rating :
60A
Moisture Sensitivity Level (MSL) :
Not Applicable
Type :
HiPerFET Power MOSFET
Vgs(th) (Max) @ Id :
4.5V @ 8mA
Datasheets
IXFN60N60
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFN60N60 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:4, Package / Case:SOT-227-4, miniBLOC, Number of Channels:1 Channel, Number of Pins:3, Mounting Type:Chassis Mount, Type:HiPerFET Power MOSFET, IXFN60N60 pinout, IXFN60N60 datasheet PDF, IXFN60N60 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFN60N60 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFN60N60


N-Channel Tube 75m Ω @ 500mA, 10V ±20V 15000pF @ 25V 380nC @ 10V 600V SOT-227-4, miniBLOC

IXFN60N60 Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 4000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 15000pF @ 25V.This device conducts a continuous drain current (ID) of 60A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 60 A.When the device is turned off, a turn-off delay time of 110 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 240A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4.5V threshold voltage.A normal operation of the DS requires keeping the breakdown voltage above 600 V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFN60N60 Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 240A.
a threshold voltage of 4.5V
a 600V drain to source voltage (Vdss)


IXFN60N60 Applications


There are a lot of IXYS
IXFN60N60 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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