IXFN60N60
- Mfr.Part #
- IXFN60N60
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 60A SOT-227B
- Stock
- 46,999
- In Stock :
- 46,999
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 600V
- Product :
- Power MOSFET Modules
- Terminal Form :
- UNSPECIFIED
- Resistance :
- 75mOhm
- Operating Temperature :
- -55°C~150°C TJ
- Termination :
- Screw
- Rds On (Max) @ Id, Vgs :
- 75m Ω @ 500mA, 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminations :
- 4
- Package Shape :
- RECTANGULAR
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- 600V
- Maximum Operating Temperature :
- + 150 C
- DS Breakdown Voltage-Min :
- 600 V
- Power Dissipation (Max) :
- 700W (Tc)
- Drain-source On Resistance-Max :
- 0.08 Ω
- Power Dissipation-Max :
- 700W Tc
- Package / Case :
- SOT-227-4, miniBLOC
- Transistor Polarity :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 15000pF @ 25V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 240A
- Number of Channels :
- 1 Channel
- Continuous Drain Current (ID) :
- 60A
- FET Feature :
- --
- REACH SVHC :
- No SVHC
- Manufacturer :
- IXYS
- Voltage - Rated DC :
- 600V
- Mounting Style :
- Chassis Mount
- Power Dissipation :
- 600W
- JESD-30 Code :
- R-PUFM-X4
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Category :
- Discrete Semiconductor Modules
- Packaging :
- Tube
- Nominal Vgs :
- 4.5 V
- Transistor Application :
- SWITCHING
- Minimum Operating Temperature :
- - 55 C
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Position :
- UPPER
- Number of Pins :
- 3
- Additional Feature :
- AVALANCHE RATED
- Surface Mount :
- No
- Polarity/Channel Type :
- N-Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Lead Free :
- Lead Free
- Drain Current-Max (Abs) (ID) :
- 60 A
- Tradename :
- HyperFET
- Height :
- 12.22 mm
- Product Type :
- Discrete Semiconductor Modules
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 52ns
- Case Connection :
- DRAIN
- Series :
- HiPerFET™
- Pbfree Code :
- yes
- Weight :
- 40g
- Power Dissipation-Max (Abs) :
- 700 W
- Length :
- 38.23 mm
- Fall Time (Typ) :
- 26 ns
- Published :
- 2000
- Base Product Number :
- IXFN60
- RoHS Status :
- RoHS Compliant
- Avalanche Energy Rating (Eas) :
- 4000 mJ
- RoHS :
- Details
- Threshold Voltage :
- 4.5V
- Reach Compliance Code :
- Compliant
- Isolation Voltage :
- 2.5kV
- Factory Lead Time :
- 8 Weeks
- Qualification Status :
- Not Qualified
- Number of Terminals :
- 4
- Product Status :
- Obsolete
- Gate Charge (Qg) (Max) @ Vgs :
- 380nC @ 10V
- Package :
- Tube
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 110 ns
- Terminal Finish :
- Nickel (Ni)
- Width :
- 25.42 mm
- Pin Count :
- 4
- Brand :
- IXYS
- Mounting Type :
- Chassis Mount
- Number of Elements :
- 1
- Mount :
- Chassis Mount
- Dual Supply Voltage :
- 600V
- Supplier Device Package :
- SOT-227B
- Current Rating :
- 60A
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Type :
- HiPerFET Power MOSFET
- Vgs(th) (Max) @ Id :
- 4.5V @ 8mA
- Datasheets
- IXFN60N60

N-Channel Tube 75m Ω @ 500mA, 10V ±20V 15000pF @ 25V 380nC @ 10V 600V SOT-227-4, miniBLOC
IXFN60N60 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 4000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 15000pF @ 25V.This device conducts a continuous drain current (ID) of 60A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 60 A.When the device is turned off, a turn-off delay time of 110 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 240A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4.5V threshold voltage.A normal operation of the DS requires keeping the breakdown voltage above 600 V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFN60N60 Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 240A.
a threshold voltage of 4.5V
a 600V drain to source voltage (Vdss)
IXFN60N60 Applications
There are a lot of IXYS
IXFN60N60 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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