IXFN520N075T2
- Mfr.Part #
- IXFN520N075T2
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 480A SOT227B
- Stock
- 23,701
- In Stock :
- 23,701
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- GigaMOS™, HiPerFET™, TrenchT2™
- Supplier Device Package :
- SOT-227B
- Transistor Element Material :
- SILICON
- Product :
- Power MOSFET Modules
- Maximum Operating Temperature :
- + 175 C
- Reach Compliance Code :
- Compliant
- Power Dissipation (Max) :
- 940W (Tc)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Operating Temperature :
- 175 °C
- Mount :
- Chassis Mount, Screw
- Minimum Operating Temperature :
- - 55 C
- Transistor Polarity :
- N-Channel
- Number of Elements :
- 1
- Product Type :
- Discrete Semiconductor Modules
- Operating Temperature :
- -55°C~175°C TJ
- Rds On Max :
- 1.9 mΩ
- Number of Terminals :
- 4
- Type :
- Trench
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Resistance :
- 1.5 MΩ
- Product Status :
- Active
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- RoHS :
- Details
- FET Type :
- N-Channel
- Package Shape :
- RECTANGULAR
- ECCN Code :
- EAR99
- Drain Current-Max (Abs) (ID) :
- 480 A
- Configuration :
- Single
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Terminations :
- 4
- Polarity/Channel Type :
- N-Channel
- Number of Channels :
- 1 Channel
- Radiation Hardening :
- No
- Published :
- 2009
- Transistor Application :
- SWITCHING
- Drain to Source Breakdown Voltage :
- 75V
- Drain to Source Voltage (Vdss) :
- 75V
- Tradename :
- HiPerFET
- Output Current :
- 480A
- Packaging :
- Tube
- Factory Lead Time :
- 20 Weeks
- Element Configuration :
- Single
- Input Capacitance :
- 41 nF
- Product Category :
- Discrete Semiconductor Modules
- Rds On (Max) @ Id, Vgs :
- 1.9m Ω @ 100A, 10V
- Terminal Position :
- UPPER
- Continuous Drain Current (ID) :
- 480A
- Power Dissipation-Max :
- 940W Tc
- Vgs (Max) :
- ±20V
- Surface Mount :
- No
- Max Power Dissipation :
- 940 W
- Operating Mode :
- ENHANCEMENT MODE
- Brand :
- IXYS
- FET Feature :
- --
- Min Operating Temperature :
- -55 °C
- Number of Outputs :
- 1
- Package :
- Tube
- Pbfree Code :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 41000pF @ 25V
- RoHS Status :
- ROHS3 Compliant
- Qualification Status :
- Not Qualified
- Turn-Off Delay Time :
- 80 ns
- Lead Free :
- Lead Free
- Pin Count :
- 4
- Base Product Number :
- IXFN520
- Terminal Form :
- UNSPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 545nC @ 10V
- Terminal Finish :
- Nickel (Ni)
- Case Connection :
- Isolated
- Rise Time :
- 36ns
- Mounting Type :
- Chassis Mount
- Turn On Delay Time :
- 48 ns
- Nominal Supply Current :
- 200A
- Pulsed Drain Current-Max (IDM) :
- 1500 A
- Mounting Style :
- Screw Mounts
- Current - Continuous Drain (Id) @ 25°C :
- 480A Tc
- Output Voltage :
- 75V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Drain-source On Resistance-Max :
- 0.0019 Ω
- Package / Case :
- SOT-227-4, miniBLOC
- Fall Time (Typ) :
- 35 ns
- Turn-On Delay Time :
- 48 ns
- Manufacturer :
- IXYS
- Number of Pins :
- 4
- Power Dissipation :
- 940W
- JESD-30 Code :
- R-PUFM-X4
- Gate to Source Voltage (Vgs) :
- 5V
- Power Dissipation-Max (Abs) :
- 940 W
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- DS Breakdown Voltage-Min :
- 75 V
- Datasheets
- IXFN520N075T2

N-Channel Tube 1.9m Ω @ 100A, 10V ±20V 41000pF @ 25V 545nC @ 10V 75V SOT-227-4, miniBLOC
IXFN520N075T2 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 3000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 41000pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 480A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 75V, and this device has a drainage-to-source breakdown voltage of 75VV.Drain current refers to the maximum continuous current a device can conduct, and it is 480 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 80 ns.Peak drain current is 1500 A, which is the maximum pulsed drain current.This device has a drain-to-source resistance of 1.5 mΩ when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 48 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 5V to 1.Normal operation requires that the DS breakdown voltage remain above 75 V.For this transistor to work, a voltage 75V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFN520N075T2 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 480A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 1500 A.
single MOSFETs transistor is 1.5 mΩ
a 75V drain to source voltage (Vdss)
IXFN520N075T2 Applications
There are a lot of IXYS
IXFN520N075T2 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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