IXFN50N80Q2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Power Dissipation (Max) :

1135W (Tc)

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

10 Weeks

FET Type :

N-Channel

Terminal Finish :

Nickel (Ni)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±30V

Pbfree Code :

yes

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-XUFM-X4

Qualification Status :

Not Qualified

Avalanche Energy Rating (Eas) :

5000 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Max Power Dissipation :

890 W

Power Dissipation-Max (Abs) :

890 W

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

Rds On (Max) @ Id, Vgs :

160m Ω @ 500mA, 10V

Package :

Tube

Package / Case :

SOT-227-4, miniBLOC

Product Status :

Not For New Designs

Number of Terminations :

4

Series :

HiPerFET™

Number of Terminals :

4

Base Product Number :

IXFN50

Supplier Device Package :

SOT-227B

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.15 Ω

Reach Compliance Code :

Compliant

Drain to Source Resistance :

150 mΩ

Drain to Source Voltage (Vdss) :

800V

FET Feature :

--

Gate to Source Voltage (Vgs) :

30V

Fall Time (Typ) :

13 ns

Continuous Drain Current (ID) :

50A

Vgs(th) (Max) @ Id :

5.5V @ 8mA

Rise Time :

25ns

Power Dissipation-Max :

1135W Tc

Mounting Type :

Chassis Mount

Pin Count :

4

Power Dissipation :

1.135kW

Drain to Source Breakdown Voltage :

800V

Turn-Off Delay Time :

60 ns

Drain Current-Max (Abs) (ID) :

50 A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

2010

DS Breakdown Voltage-Min :

800 V

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Resistance :

150mOhm

Max Operating Temperature :

150 °C

Surface Mount :

No

Mount :

Chassis Mount

Min Operating Temperature :

-55 °C

Packaging :

Tube

Input Capacitance :

13.5 nF

Terminal Position :

UPPER

Configuration :

SINGLE WITH BUILT-IN DIODE

Manufacturer :

IXYS Corporation

Polarity/Channel Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Number of Pins :

4

RoHS :

Compliant

Rds On Max :

160 mΩ

Input Capacitance (Ciss) (Max) @ Vds :

13500pF @ 25V

Pulsed Drain Current-Max (IDM) :

200A

Terminal Form :

UNSPECIFIED

Package Shape :

RECTANGULAR

Case Connection :

Isolated