IXFN48N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

4

Gate to Source Voltage (Vgs) :

30V

Number of Elements per Chip :

1

Base Product Number :

IXFN48

RoHS :

Details

Length :

38.23mm

Product Type :

Discrete Semiconductor Modules

Product Status :

Active

DS Breakdown Voltage-Min :

600 V

Package / Case :

SOT-227-4, miniBLOC

Reach Compliance Code :

Compliant

Mounting Type :

Chassis Mount

Type :

HiPerFET

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

625W Tc

Case Connection :

Isolated

JESD-30 Code :

R-PUFM-X4

Configuration :

Single

Rise Time :

25ns

Current Rating :

48A

Product :

Power MOSFET Modules

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

UNSPECIFIED

Number of Terminations :

4

Brand :

IXYS

Published :

2006

Drain to Source Voltage (Vdss) :

600V

Package Shape :

RECTANGULAR

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Channel Mode :

Enhancement

Turn-Off Delay Time :

85 ns

Channel Type :

N

Mount :

Chassis Mount, Panel, Screw

Height :

9.6mm

Manufacturer :

IXYS

Element Configuration :

Single

Package :

Tube

Number of Elements :

1

Number of Pins :

4

Number of Channels :

1 Channel

Number of Terminals :

4

Drain to Source Breakdown Voltage :

600V

Transistor Polarity :

N-Channel

Terminal Finish :

Nickel (Ni)

Width :

25.42mm

Voltage - Rated DC :

600V

Continuous Drain Current (ID) :

40A

Power Dissipation (Max) :

625W (Tc)

FET Type :

N-Channel

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

110A

Fall Time (Typ) :

22 ns

Series :

PolarHV™

Drain-source On Resistance-Max :

0.14 Ω

FET Feature :

--

Continuous Drain Current Id :

40A

ECCN Code :

EAR99

Factory Lead Time :

30 Weeks

Mounting Style :

Screw Mounts

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Package Type :

SOT-227

Turn On Delay Time :

30 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Tradename :

HiPerFET

Product Category :

Discrete Semiconductor Modules

Minimum Operating Temperature :

-55 °C

Terminal Position :

UPPER

Subcategory :

Discrete Semiconductor Modules

Surface Mount :

No

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

8860pF @ 25V

Rds On (Max) @ Id, Vgs :

140m Ω @ 4A, 10V

Power Dissipation :

625W

Maximum Operating Temperature :

+150 °C

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

2000 mJ

Packaging :

Tube

Qualification Status :

Not Qualified

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drive Voltage (Max Rds On,Min Rds On) :

10V

Polarity/Channel Type :

N-Channel

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

5.5V @ 8mA

Supplier Device Package :

SOT-227B

Vgs (Max) :

±30V