IXFN48N50

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Mfr.Part #
IXFN48N50
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 500V 48A SOT-227B
Stock
567
In Stock :
567

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Breakdown Voltage :
500V
Length :
38.2 mm
Rds On (Max) @ Id, Vgs :
100m Ω @ 500mA, 10V
Drain Current-Max (Abs) (ID) :
48 A
Package :
Tube
Number of Terminations :
4
Product Type :
Discrete Semiconductor Modules
Surface Mount :
No
Input Capacitance (Ciss) (Max) @ Vds :
7000pF @ 25V
Packaging :
Tube
Drain-source On Resistance-Max :
100 Ω
Height :
9.6 mm
Transistor Element Material :
SILICON
Tradename :
HiPerFET
Product Category :
Discrete Semiconductor Modules
Power Dissipation-Max (Abs) :
500 W
Product Status :
Active
Brand :
IXYS
JESD-30 Code :
R-PUFM-X4
Terminal Position :
UPPER
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mount :
Chassis Mount, Screw
Manufacturer :
IXYS
Width :
25.07 mm
Drive Voltage (Max Rds On,Min Rds On) :
10V
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Continuous Drain Current (ID) :
48A
Configuration :
SINGLE WITH BUILT-IN DIODE
Pin Count :
4
Current - Continuous Drain (Id) @ 25°C :
48A Tc
Radiation Hardening :
No
RoHS :
Details
Drain to Source Voltage (Vdss) :
500V
Power Dissipation-Max :
500W Tc
Turn-Off Delay Time :
75 ns
Maximum Operating Temperature :
+ 150 C
Additional Feature :
AVALANCHE RATED
Avalanche Energy Rating (Eas) :
2500 mJ
Polarity/Channel Type :
N-Channel
Gate to Source Voltage (Vgs) :
20V
Transistor Polarity :
N-Channel
Terminal Form :
UNSPECIFIED
Package / Case :
SOT-227-4, miniBLOC
Reach Compliance Code :
Compliant
Pbfree Code :
yes
DS Breakdown Voltage-Min :
500 V
Minimum Operating Temperature :
- 55 C
FET Feature :
--
Mounting Type :
Chassis Mount
Number of Channels :
1 Channel
Case Connection :
Isolated
Package Shape :
RECTANGULAR
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Factory Lead Time :
30 Weeks
Terminal Finish :
Nickel (Ni)
Mounting Style :
Chassis Mount
Supplier Device Package :
SOT-227B
Rise Time :
22ns
Lead Free :
Lead Free
Operating Mode :
ENHANCEMENT MODE
Series :
HiPerFET™
Product :
Power MOSFET Modules
Qualification Status :
Not Qualified
Number of Terminals :
4
Resistance :
100MOhm
Pulsed Drain Current-Max (IDM) :
192 A
Base Product Number :
IXFN48
Vgs(th) (Max) @ Id :
4V @ 4mA
Fall Time (Typ) :
10 ns
Gate Charge (Qg) (Max) @ Vgs :
190nC @ 10V
Operating Temperature :
-55°C~150°C TJ
Published :
2002
Number of Pins :
4
Power Dissipation :
500W
Number of Elements :
1
Vgs (Max) :
±20V
Power Dissipation (Max) :
500W (Tc)
Transistor Application :
SWITCHING
FET Type :
N-Channel
Datasheets
IXFN48N50
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFN48N50 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:4, Package / Case:SOT-227-4, miniBLOC, Mounting Type:Chassis Mount, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Number of Pins:4, IXFN48N50 pinout, IXFN48N50 datasheet PDF, IXFN48N50 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFN48N50 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFN48N50


N-Channel Tube 100m Ω @ 500mA, 10V ±20V 7000pF @ 25V 190nC @ 10V 500V SOT-227-4, miniBLOC

IXFN48N50Q Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2500 mJ.A device's maximum input capacitance is 7000pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 48A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.Its drain current is 48 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 75 ns.Its maximum pulsed drain current is 192 A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 500 V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFN48N50Q Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 48A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 192 A.
a 500V drain to source voltage (Vdss)


IXFN48N50Q Applications


There are a lot of IXYS
IXFN48N50Q applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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