IXFN44N80

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Mfr.Part #
IXFN44N80
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 800V 44A SOT-227B
Stock
44,541
In Stock :
44,541

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS Status :
ROHS3 Compliant
Polarity/Channel Type :
N-Channel
Continuous Drain Current (ID) :
39A
Maximum Operating Temperature :
+ 150 C
MSL :
-
Length :
38.23 mm
Additional Feature :
AVALANCHE RATED
Package Shape :
RECTANGULAR
Drain to Source Voltage (Vdss) :
800V
Qualification Status :
Not Qualified
Continuous Drain Current Id :
44A
Number of Channels :
1 Channel
Series :
PolarHV™
Subcategory :
Discrete Semiconductor Modules
Product Category :
Discrete Semiconductor Modules
Type :
PolarHV HiPerFET Power MOSFET
Current - Continuous Drain (Id) @ 25°C :
39A Tc
Transistor Element Material :
SILICON
Pin Count :
4
Radiation Hardening :
No
Operating Temperature :
-55°C~150°C TJ
Drain-source On Resistance-Max :
0.19 Ω
ECCN Code :
EAR99
Power Dissipation-Max :
694W Tc
Packaging :
Tube
Transistor Polarity :
N-Channel
Mounting Style :
Screw Mounts
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mount :
Chassis Mount, Screw
Vgs (Max) :
±30V
Pulsed Drain Current-Max (IDM) :
100 A
Base Product Number :
IXFN44
FET Type :
N-Channel
Mounting Type :
Chassis Mount
Gate Charge (Qg) (Max) @ Vgs :
200nC @ 10V
DS Breakdown Voltage-Min :
800 V
Manufacturer :
IXYS
Package :
Tube
Power Dissipation :
694W
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Turn-Off Delay Time :
75 ns
Terminal Form :
UNSPECIFIED
Minimum Operating Temperature :
- 55 C
RoHS :
Details
Pbfree Code :
yes
Configuration :
Single
Transistor Application :
SWITCHING
Number of Elements :
1
Vgs(th) (Max) @ Id :
5V @ 8mA
Factory Lead Time :
30 Weeks
Case Connection :
Isolated
Power Dissipation (Max) :
694W (Tc)
Avalanche Energy Rating (Eas) :
3400 mJ
Reach Compliance Code :
Compliant
Product Status :
Active
Surface Mount :
No
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Breakdown Voltage :
800V
Number of Pins :
4
Number of Terminals :
4
Qualification :
-
Threshold Voltage :
5V
JESD-30 Code :
R-PUFM-X4
Supplier Device Package :
SOT-227B
Published :
2003
Terminal Position :
UPPER
Gate to Source Voltage (Vgs) :
30V
Rise Time :
22ns
Product Type :
Discrete Semiconductor Modules
Tradename :
HiPerFET
Width :
25.42 mm
Element Configuration :
Single
Package / Case :
SOT-227-4, miniBLOC
Operating Mode :
ENHANCEMENT MODE
Fall Time (Typ) :
27 ns
Brand :
IXYS
Height :
12.22 mm
Terminal Finish :
Nickel (Ni)
Product :
Power MOSFET Modules
Rds On (Max) @ Id, Vgs :
190m Ω @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds :
12000pF @ 25V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
REACH SVHC :
No SVHC
FET Feature :
--
Number of Terminations :
4
Channel Type :
N Channel
Datasheets
IXFN44N80
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFN44N80 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Type:PolarHV HiPerFET Power MOSFET, Operating Temperature:-55°C~150°C TJ, Mounting Type:Chassis Mount, Number of Pins:4, Package / Case:SOT-227-4, miniBLOC, Number of Terminations:4, IXFN44N80 pinout, IXFN44N80 datasheet PDF, IXFN44N80 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFN44N80 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFN44N80


N-Channel Tube 190m Ω @ 500mA, 10V ±30V 12000pF @ 25V 200nC @ 10V 800V SOT-227-4, miniBLOC

IXFN44N80P Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3400 mJ.The maximum input capacitance of this device is 12000pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 39A.When VGS=800V, and ID flows to VDS at 800VVDS, the drain-source breakdown voltage is 800V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 75 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 100 A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 800 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 800V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFN44N80P Features


the avalanche energy rating (Eas) is 3400 mJ
a continuous drain current (ID) of 39A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 100 A.
a threshold voltage of 5V
a 800V drain to source voltage (Vdss)


IXFN44N80P Applications


There are a lot of IXYS
IXFN44N80P applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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