IXFN44N60

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Dual Supply Voltage :

600V

Mounting Type :

Chassis Mount

Vgs (Max) :

±20V

Pbfree Code :

yes

Power Dissipation :

600W

Termination :

Screw

Turn-Off Delay Time :

110 ns

Package :

Tube

Surface Mount :

No

JESD-30 Code :

R-PUFM-X4

Terminal Position :

UPPER

Transistor Polarity :

N-Channel

Terminal Form :

UNSPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rise Time :

55ns

Vgs(th) (Max) @ Id :

4.5V @ 8mA

Fall Time (Typ) :

45 ns

Polarity/Channel Type :

N-Channel

Nominal Vgs :

4.5 V

Avalanche Energy Rating (Eas) :

3000 mJ

Length :

38.2 mm

Series :

HiPerFET™

Package Shape :

RECTANGULAR

Product Category :

Discrete Semiconductor Modules

Package / Case :

SOT-227-4, miniBLOC

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2000

Reach Compliance Code :

Compliant

Width :

25.07 mm

Manufacturer :

IXYS

Qualification Status :

Not Qualified

Drain to Source Voltage (Vdss) :

600V

Power Dissipation (Max) :

600W (Tc)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

RoHS Compliant

Product :

Power MOSFET Modules

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

330nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

44A Tc

Number of Pins :

3

Threshold Voltage :

4.5V

Number of Channels :

1 Channel

Resistance :

130mOhm

Rds On (Max) @ Id, Vgs :

130m Ω @ 500mA, 10V

Maximum Operating Temperature :

+ 150 C

Supplier Device Package :

SOT-227B

Number of Terminals :

4

Number of Terminations :

4

Gate to Source Voltage (Vgs) :

20V

Isolation Voltage :

2.5kV

Brand :

IXYS

FET Feature :

--

Power Dissipation-Max :

600W Tc

DS Breakdown Voltage-Min :

600 V

Power Dissipation-Max (Abs) :

600 W

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

44 A

Tradename :

HiPerFET

Pin Count :

4

Transistor Application :

SWITCHING

Weight :

46g

Mounting Style :

Chassis Mount

Height :

9.6 mm

Additional Feature :

AVALANCHE RATED

Pulsed Drain Current-Max (IDM) :

176 A

Mount :

Chassis Mount, Screw

Transistor Element Material :

SILICON

Base Product Number :

IXFN44

Drain to Source Breakdown Voltage :

600V

Minimum Operating Temperature :

- 55 C

Drain-source On Resistance-Max :

0.13 Ω

Product Status :

Active

ECCN Code :

EAR99

Radiation Hardening :

No

RoHS :

Details

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

8900pF @ 25V

Product Type :

Discrete Semiconductor Modules

Continuous Drain Current (ID) :

44A

Packaging :

Tube

Terminal Finish :

Nickel (Ni)