IXFN44N50Q
- Mfr.Part #
- IXFN44N50Q
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 44A SOT-227B
- Stock
- 17,685
- In Stock :
- 17,685
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 500W Tc
- Terminal Form :
- UNSPECIFIED
- Nominal Vgs :
- 4 V
- Rise Time :
- 22ns
- Qualification Status :
- Not Qualified
- Polarity/Channel Type :
- N-Channel
- RoHS :
- Details
- Number of Terminals :
- 4
- Base Product Number :
- IXFN44
- Product :
- Power MOSFET Modules
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max (Abs) :
- 500 W
- Number of Elements :
- 1
- Minimum Operating Temperature :
- - 55 C
- Supplier Device Package :
- SOT-227B
- FET Feature :
- --
- Width :
- 25.07 mm
- Tradename :
- HyperFET
- Number of Pins :
- 3
- Power Dissipation (Max) :
- 500W (Tc)
- Dual Supply Voltage :
- 500V
- Terminal Finish :
- Nickel (Ni)
- Fall Time (Typ) :
- 10 ns
- Product Type :
- Discrete Semiconductor Modules
- Rds On (Max) @ Id, Vgs :
- 120m Ω @ 500mA, 10V
- Brand :
- IXYS
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- JESD-30 Code :
- R-PUFM-X4
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 75 ns
- Drain to Source Breakdown Voltage :
- 500V
- Pin Count :
- 4
- Termination :
- Screw
- Package / Case :
- SOT-227-4, miniBLOC
- Drain Current-Max (Abs) (ID) :
- 44 A
- Height :
- 9.6 mm
- Mount :
- Chassis Mount
- Series :
- HiPerFET™
- Terminal Position :
- UPPER
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Case Connection :
- Isolated
- Transistor Element Material :
- SILICON
- Weight :
- 44g
- Manufacturer :
- IXYS
- DS Breakdown Voltage-Min :
- 500 V
- Mounting Type :
- Chassis Mount
- Continuous Drain Current (ID) :
- 44A
- Published :
- 2002
- Pulsed Drain Current-Max (IDM) :
- 176A
- Isolation Voltage :
- 2.5kV
- Input Capacitance (Ciss) (Max) @ Vds :
- 7000pF @ 25V
- Resistance :
- 120mOhm
- Maximum Operating Temperature :
- + 150 C
- Package Shape :
- RECTANGULAR
- REACH SVHC :
- No SVHC
- Gate Charge (Qg) (Max) @ Vgs :
- 190nC @ 10V
- Additional Feature :
- AVALANCHE RATED
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mounting Style :
- Chassis Mount
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Drain-source On Resistance-Max :
- 120 Ω
- Current - Continuous Drain (Id) @ 25°C :
- 44A Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 38.2 mm
- Surface Mount :
- No
- Threshold Voltage :
- 4V
- Pbfree Code :
- yes
- Number of Terminations :
- 4
- Package :
- Tube
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Voltage (Vdss) :
- 500V
- Reach Compliance Code :
- Compliant
- Number of Channels :
- 1 Channel
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Product Category :
- Discrete Semiconductor Modules
- Power Dissipation :
- 500W
- ECCN Code :
- EAR99
- Transistor Polarity :
- N-Channel
- Product Status :
- Active
- Datasheets
- IXFN44N50Q

N-Channel Tube 120m Ω @ 500mA, 10V ±20V 7000pF @ 25V 190nC @ 10V 500V SOT-227-4, miniBLOC
IXFN44N50Q Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 2500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 7000pF @ 25V.This device has a continuous drain current (ID) of [44A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.A device's drain current is its maximum continuous current, and this device's drain current is 44 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 75 ns.A maximum pulsed drain current of 176A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFN44N50Q Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 176A.
a threshold voltage of 4V
a 500V drain to source voltage (Vdss)
IXFN44N50Q Applications
There are a lot of IXYS
IXFN44N50Q applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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