IXFN44N50Q

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Mfr.Part #
IXFN44N50Q
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 500V 44A SOT-227B
Stock
17,685
In Stock :
17,685

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS Status :
ROHS3 Compliant
Power Dissipation-Max :
500W Tc
Terminal Form :
UNSPECIFIED
Nominal Vgs :
4 V
Rise Time :
22ns
Qualification Status :
Not Qualified
Polarity/Channel Type :
N-Channel
RoHS :
Details
Number of Terminals :
4
Base Product Number :
IXFN44
Product :
Power MOSFET Modules
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs(th) (Max) @ Id :
4V @ 4mA
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation-Max (Abs) :
500 W
Number of Elements :
1
Minimum Operating Temperature :
- 55 C
Supplier Device Package :
SOT-227B
FET Feature :
--
Width :
25.07 mm
Tradename :
HyperFET
Number of Pins :
3
Power Dissipation (Max) :
500W (Tc)
Dual Supply Voltage :
500V
Terminal Finish :
Nickel (Ni)
Fall Time (Typ) :
10 ns
Product Type :
Discrete Semiconductor Modules
Rds On (Max) @ Id, Vgs :
120m Ω @ 500mA, 10V
Brand :
IXYS
Drive Voltage (Max Rds On,Min Rds On) :
10V
Packaging :
Tube
JESD-30 Code :
R-PUFM-X4
Transistor Application :
SWITCHING
Turn-Off Delay Time :
75 ns
Drain to Source Breakdown Voltage :
500V
Pin Count :
4
Termination :
Screw
Package / Case :
SOT-227-4, miniBLOC
Drain Current-Max (Abs) (ID) :
44 A
Height :
9.6 mm
Mount :
Chassis Mount
Series :
HiPerFET™
Terminal Position :
UPPER
Configuration :
SINGLE WITH BUILT-IN DIODE
Case Connection :
Isolated
Transistor Element Material :
SILICON
Weight :
44g
Manufacturer :
IXYS
DS Breakdown Voltage-Min :
500 V
Mounting Type :
Chassis Mount
Continuous Drain Current (ID) :
44A
Published :
2002
Pulsed Drain Current-Max (IDM) :
176A
Isolation Voltage :
2.5kV
Input Capacitance (Ciss) (Max) @ Vds :
7000pF @ 25V
Resistance :
120mOhm
Maximum Operating Temperature :
+ 150 C
Package Shape :
RECTANGULAR
REACH SVHC :
No SVHC
Gate Charge (Qg) (Max) @ Vgs :
190nC @ 10V
Additional Feature :
AVALANCHE RATED
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mounting Style :
Chassis Mount
Avalanche Energy Rating (Eas) :
2500 mJ
Drain-source On Resistance-Max :
120 Ω
Current - Continuous Drain (Id) @ 25°C :
44A Tc
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Temperature :
-55°C~150°C TJ
Length :
38.2 mm
Surface Mount :
No
Threshold Voltage :
4V
Pbfree Code :
yes
Number of Terminations :
4
Package :
Tube
Vgs (Max) :
±20V
Operating Mode :
ENHANCEMENT MODE
Drain to Source Voltage (Vdss) :
500V
Reach Compliance Code :
Compliant
Number of Channels :
1 Channel
FET Type :
N-Channel
Gate to Source Voltage (Vgs) :
20V
Product Category :
Discrete Semiconductor Modules
Power Dissipation :
500W
ECCN Code :
EAR99
Transistor Polarity :
N-Channel
Product Status :
Active
Datasheets
IXFN44N50Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFN44N50Q from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:SOT-227-4, miniBLOC, Mounting Type:Chassis Mount, Operating Temperature:-55°C~150°C TJ, Number of Terminations:4, Number of Channels:1 Channel, IXFN44N50Q pinout, IXFN44N50Q datasheet PDF, IXFN44N50Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFN44N50Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFN44N50Q


N-Channel Tube 120m Ω @ 500mA, 10V ±20V 7000pF @ 25V 190nC @ 10V 500V SOT-227-4, miniBLOC

IXFN44N50Q Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 2500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 7000pF @ 25V.This device has a continuous drain current (ID) of [44A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.A device's drain current is its maximum continuous current, and this device's drain current is 44 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 75 ns.A maximum pulsed drain current of 176A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFN44N50Q Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 176A.
a threshold voltage of 4V
a 500V drain to source voltage (Vdss)


IXFN44N50Q Applications


There are a lot of IXYS
IXFN44N50Q applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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