IXFN44N50

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

44 A

Published :

2002

Number of Terminals :

4

Vgs(th) (Max) @ Id :

4V @ 4mA

Threshold Voltage :

4V

Transistor Element Material :

SILICON

Terminal Position :

UPPER

Base Product Number :

IXFN44

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Nickel (Ni)

Isolation Voltage :

2.5kV

Height :

9.6 mm

Manufacturer :

IXYS

Drain-source On Resistance-Max :

120 Ω

Current - Continuous Drain (Id) @ 25°C :

44A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Nominal Vgs :

4 V

Number of Pins :

3

Minimum Operating Temperature :

- 55 C

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pulsed Drain Current-Max (IDM) :

176A

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

120m Ω @ 500mA, 10V

ECCN Code :

EAR99

FET Feature :

--

DS Breakdown Voltage-Min :

500 V

Product Status :

Active

Mounting Type :

Chassis Mount

Input Capacitance (Ciss) (Max) @ Vds :

7000pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Reach Compliance Code :

Compliant

Terminal Form :

UNSPECIFIED

Polarity/Channel Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Resistance :

120mOhm

Weight :

44g

Termination :

Screw

Power Dissipation :

500W

Additional Feature :

AVALANCHE RATED

Package :

Tube

Number of Terminations :

4

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Product Category :

Discrete Semiconductor Modules

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

Isolated

Pbfree Code :

yes

Supplier Device Package :

SOT-227B

Brand :

IXYS

Length :

38.2 mm

Package / Case :

SOT-227-4, miniBLOC

Width :

25.07 mm

Dual Supply Voltage :

500V

Maximum Operating Temperature :

+ 150 C

Power Dissipation-Max (Abs) :

500 W

Continuous Drain Current (ID) :

44A

Power Dissipation (Max) :

500W (Tc)

Surface Mount :

No

Series :

HiPerFET™

Transistor Polarity :

N-Channel

Drain to Source Breakdown Voltage :

500V

Operating Mode :

ENHANCEMENT MODE

Rise Time :

22ns

Gate Charge (Qg) (Max) @ Vgs :

190nC @ 10V

Package Shape :

RECTANGULAR

Qualification Status :

Not Qualified

Packaging :

Tube

Mounting Style :

Chassis Mount

RoHS :

Details

Product :

Power MOSFET Modules

Tradename :

HyperFET

Mount :

Chassis Mount

Product Type :

Discrete Semiconductor Modules

Turn-Off Delay Time :

75 ns

Pin Count :

4

Drain to Source Voltage (Vdss) :

500V

Avalanche Energy Rating (Eas) :

2500 mJ

Number of Channels :

1 Channel

Fall Time (Typ) :

10 ns

Power Dissipation-Max :

500W Tc

FET Type :

N-Channel

JESD-30 Code :

R-PUFM-X4