IXFN44N100P
- Mfr.Part #
- IXFN44N100P
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 37A SOT-227B
- Stock
- 6
- In Stock :
- 6
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Chassis Mount
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Series :
- Polar™
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Chassis Mount
- Package :
- Tube
- Mounting Style :
- Screw Mounts
- Fall Time (Typ) :
- 54 ns
- Product Category :
- Discrete Semiconductor Modules
- Package Shape :
- RECTANGULAR
- Number of Elements :
- 1
- Width :
- 25.42 mm
- Qualification Status :
- Not Qualified
- Package / Case :
- SOT-227-4, miniBLOC
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Brand :
- IXYS
- Vgs(th) (Max) @ Id :
- 6.5V @ 1mA
- Polarity/Channel Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 110A
- Max Power Dissipation :
- 890 W
- Drain to Source Breakdown Voltage :
- 1kV
- Factory Lead Time :
- 30 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Product Type :
- Discrete Semiconductor Modules
- Input Capacitance (Ciss) (Max) @ Vds :
- 19000pF @ 25V
- FET Feature :
- --
- Type :
- Polar Power MOSFET HiPerFET
- Power Dissipation-Max :
- 890W Tc
- Base Product Number :
- IXFN44
- Drain to Source Voltage (Vdss) :
- 1000V
- Number of Terminals :
- 4
- Resistance :
- 220mOhm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-30 Code :
- R-PUFM-X4
- Transistor Polarity :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 220m Ω @ 22A, 10V
- Power Dissipation :
- 890W
- Lead Free :
- Lead Free
- Terminal Finish :
- Nickel (Ni)
- DS Breakdown Voltage-Min :
- 1000 V
- Power Dissipation (Max) :
- 890W (Tc)
- Height :
- 12.22 mm
- Max Operating Temperature :
- 150 °C
- Drain to Source Resistance :
- 220 mΩ
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Manufacturer :
- IXYS
- Reach Compliance Code :
- Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 37A Tc
- Packaging :
- Tube
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs (Max) :
- ±30V
- Number of Channels :
- 1 Channel
- Terminal Position :
- UPPER
- Rds On Max :
- 220 mΩ
- Tradename :
- HiPerFET
- Maximum Operating Temperature :
- + 150 C
- Supplier Device Package :
- SOT-227B
- Drain Current-Max (Abs) (ID) :
- 37 A
- Turn-Off Delay Time :
- 90 ns
- Product Status :
- Active
- Drain-source On Resistance-Max :
- 0.22 Ω
- Continuous Drain Current (ID) :
- 37A
- Min Operating Temperature :
- -55 °C
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Power Dissipation-Max (Abs) :
- 890 W
- Gate to Source Voltage (Vgs) :
- 30V
- Input Capacitance :
- 19 nF
- RoHS :
- Compliant
- Case Connection :
- Isolated
- Terminal Form :
- UNSPECIFIED
- Minimum Operating Temperature :
- - 55 C
- Published :
- 2008
- Number of Terminations :
- 4
- Pbfree Code :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Surface Mount :
- No
- Pin Count :
- 4
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Product :
- Power MOSFET Modules
- FET Type :
- N-Channel
- Length :
- 38.23 mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 68ns
- Gate Charge (Qg) (Max) @ Vgs :
- 305nC @ 10V
- Number of Pins :
- 4
- Datasheets
- IXFN44N100P

N-Channel Tube 220m Ω @ 22A, 10V ±30V 19000pF @ 25V 305nC @ 10V 1000V SOT-227-4, miniBLOC
IXFN44N100P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 2000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 19000pF @ 25V.This device has a continuous drain current (ID) of [37A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=1kV, the drain-source breakdown voltage is 1kV.A device's drain current is its maximum continuous current, and this device's drain current is 37 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 90 ns.A maximum pulsed drain current of 110A is the maximum peak drain current rated for this device.MOSFETs have 220 mΩ resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 1000 V.In order to operate this transistor, a voltage of 1000V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFN44N100P Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 37A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 90 ns
based on its rated peak drain current 110A.
single MOSFETs transistor is 220 mΩ
a 1000V drain to source voltage (Vdss)
IXFN44N100P Applications
There are a lot of IXYS
IXFN44N100P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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