IXFN44N100P

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Mfr.Part #
IXFN44N100P
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 1000V 37A SOT-227B
Stock
6
In Stock :
6

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Mount :
Chassis Mount
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Series :
Polar™
Transistor Application :
SWITCHING
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mounting Type :
Chassis Mount
Package :
Tube
Mounting Style :
Screw Mounts
Fall Time (Typ) :
54 ns
Product Category :
Discrete Semiconductor Modules
Package Shape :
RECTANGULAR
Number of Elements :
1
Width :
25.42 mm
Qualification Status :
Not Qualified
Package / Case :
SOT-227-4, miniBLOC
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Brand :
IXYS
Vgs(th) (Max) @ Id :
6.5V @ 1mA
Polarity/Channel Type :
N-Channel
Pulsed Drain Current-Max (IDM) :
110A
Max Power Dissipation :
890 W
Drain to Source Breakdown Voltage :
1kV
Factory Lead Time :
30 Weeks
Operating Temperature :
-55°C~150°C TJ
Product Type :
Discrete Semiconductor Modules
Input Capacitance (Ciss) (Max) @ Vds :
19000pF @ 25V
FET Feature :
--
Type :
Polar Power MOSFET HiPerFET
Power Dissipation-Max :
890W Tc
Base Product Number :
IXFN44
Drain to Source Voltage (Vdss) :
1000V
Number of Terminals :
4
Resistance :
220mOhm
Drive Voltage (Max Rds On,Min Rds On) :
10V
JESD-30 Code :
R-PUFM-X4
Transistor Polarity :
N-Channel
Rds On (Max) @ Id, Vgs :
220m Ω @ 22A, 10V
Power Dissipation :
890W
Lead Free :
Lead Free
Terminal Finish :
Nickel (Ni)
DS Breakdown Voltage-Min :
1000 V
Power Dissipation (Max) :
890W (Tc)
Height :
12.22 mm
Max Operating Temperature :
150 °C
Drain to Source Resistance :
220 mΩ
Transistor Element Material :
SILICON
RoHS Status :
ROHS3 Compliant
Manufacturer :
IXYS
Reach Compliance Code :
Compliant
Current - Continuous Drain (Id) @ 25°C :
37A Tc
Packaging :
Tube
Configuration :
SINGLE WITH BUILT-IN DIODE
Vgs (Max) :
±30V
Number of Channels :
1 Channel
Terminal Position :
UPPER
Rds On Max :
220 mΩ
Tradename :
HiPerFET
Maximum Operating Temperature :
+ 150 C
Supplier Device Package :
SOT-227B
Drain Current-Max (Abs) (ID) :
37 A
Turn-Off Delay Time :
90 ns
Product Status :
Active
Drain-source On Resistance-Max :
0.22 Ω
Continuous Drain Current (ID) :
37A
Min Operating Temperature :
-55 °C
Avalanche Energy Rating (Eas) :
2000 mJ
Power Dissipation-Max (Abs) :
890 W
Gate to Source Voltage (Vgs) :
30V
Input Capacitance :
19 nF
RoHS :
Compliant
Case Connection :
Isolated
Terminal Form :
UNSPECIFIED
Minimum Operating Temperature :
- 55 C
Published :
2008
Number of Terminations :
4
Pbfree Code :
yes
Operating Mode :
ENHANCEMENT MODE
Surface Mount :
No
Pin Count :
4
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
Product :
Power MOSFET Modules
FET Type :
N-Channel
Length :
38.23 mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rise Time :
68ns
Gate Charge (Qg) (Max) @ Vgs :
305nC @ 10V
Number of Pins :
4
Datasheets
IXFN44N100P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFN44N100P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Chassis Mount, Package / Case:SOT-227-4, miniBLOC, Operating Temperature:-55°C~150°C TJ, Type:Polar Power MOSFET HiPerFET, Number of Channels:1 Channel, Number of Terminations:4, Number of Pins:4, IXFN44N100P pinout, IXFN44N100P datasheet PDF, IXFN44N100P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFN44N100P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFN44N100P


N-Channel Tube 220m Ω @ 22A, 10V ±30V 19000pF @ 25V 305nC @ 10V 1000V SOT-227-4, miniBLOC

IXFN44N100P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 2000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 19000pF @ 25V.This device has a continuous drain current (ID) of [37A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=1kV, the drain-source breakdown voltage is 1kV.A device's drain current is its maximum continuous current, and this device's drain current is 37 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 90 ns.A maximum pulsed drain current of 110A is the maximum peak drain current rated for this device.MOSFETs have 220 mΩ resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 1000 V.In order to operate this transistor, a voltage of 1000V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFN44N100P Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 37A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 90 ns
based on its rated peak drain current 110A.
single MOSFETs transistor is 220 mΩ
a 1000V drain to source voltage (Vdss)


IXFN44N100P Applications


There are a lot of IXYS
IXFN44N100P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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