IXFN40N90P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Product Type :

Discrete Semiconductor Modules

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

230nC @ 10V

Factory Lead Time :

30 Weeks

Rds On Max :

210 mΩ

RoHS Status :

ROHS3 Compliant

Product :

Power MOSFET Modules

FET Feature :

--

Number of Elements :

1

Mounting Type :

Chassis Mount

DS Breakdown Voltage-Min :

900 V

Product Status :

Active

Published :

2011

Package Shape :

RECTANGULAR

Reach Compliance Code :

Compliant

Gate to Source Voltage (Vgs) :

30V

Supplier Device Package :

SOT-227B

Input Capacitance (Ciss) (Max) @ Vds :

14000pF @ 25V

Pin Count :

4

Vgs (Max) :

±30V

Operating Temperature :

-55°C~150°C TJ

Package / Case :

SOT-227-4, miniBLOC

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Pbfree Code :

yes

Manufacturer :

IXYS

Base Product Number :

IXFN40

Product Category :

Discrete Semiconductor Modules

Continuous Drain Current (ID) :

33A

Polarity/Channel Type :

N-Channel

Number of Terminals :

4

FET Type :

N-Channel

Case Connection :

Isolated

Operating Mode :

ENHANCEMENT MODE

RoHS :

Details

Pulsed Drain Current-Max (IDM) :

80A

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

33 A

Series :

Polar™

Mount :

Chassis Mount, Screw

Lead Free :

Lead Free

Power Dissipation :

695W

Transistor Application :

SWITCHING

Input Capacitance :

14 nF

Max Power Dissipation :

695 W

JESD-30 Code :

R-PUFM-X4

Brand :

IXYS

Power Dissipation-Max (Abs) :

695 W

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Terminal Position :

UPPER

Package :

Tube

Surface Mount :

No

Drain to Source Voltage (Vdss) :

900V

Power Dissipation (Max) :

695W (Tc)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Terminal Form :

UNSPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Style :

Screw Mounts

Number of Pins :

4

Rds On (Max) @ Id, Vgs :

210m Ω @ 20A, 10V

Terminal Finish :

Nickel (Ni)

Configuration :

Single

Min Operating Temperature :

-55 °C

Element Configuration :

Single

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Avalanche Energy Rating (Eas) :

1500 mJ

Number of Terminations :

4

Power Dissipation-Max :

695W Tc

Drain to Source Resistance :

230 mΩ

Drain to Source Breakdown Voltage :

900V

Packaging :

Tube

Type :

Polar Power MOSFET

Minimum Operating Temperature :

- 55 C

Maximum Operating Temperature :

+ 150 C

Tradename :

HiPerFET

Drain-source On Resistance-Max :

0.21 Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

150 °C