IXFN39N90

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Mfr.Part #
IXFN39N90
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 900V 39A SOT-227B
Stock
28,909
In Stock :
28,909

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Product Category :
Discrete Semiconductor Modules
Brand :
IXYS
DS Breakdown Voltage-Min :
900 V
Maximum Operating Temperature :
+ 150 C
Transistor Polarity :
N-Channel
Terminal Form :
UNSPECIFIED
Drain Current-Max (Abs) (ID) :
39 A
Power Dissipation-Max :
694W Tc
FET Feature :
--
Operating Mode :
ENHANCEMENT MODE
Surface Mount :
No
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Temperature :
-55°C~150°C TJ
Vgs (Max) :
±20V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Packaging :
Tube
Number of Pins :
4
Power Dissipation :
700W
RoHS Status :
RoHS Compliant
Number of Terminations :
4
Mounting Type :
Chassis Mount
Continuous Drain Current (ID) :
39A
Manufacturer :
IXYS
Published :
2001
Power Dissipation-Max (Abs) :
700 W
JESD-30 Code :
R-PUFM-X4
Drain to Source Voltage (Vdss) :
900V
Width :
25.07 mm
Reach Compliance Code :
Compliant
Drive Voltage (Max Rds On,Min Rds On) :
10V
Rise Time :
68ns
Product Type :
Discrete Semiconductor Modules
Current - Continuous Drain (Id) @ 25°C :
39A Tc
Package :
Tube
Number of Terminals :
4
Number of Elements :
1
Terminal Position :
UPPER
Product :
Power MOSFET Modules
Additional Feature :
AVALANCHE RATED
Transistor Element Material :
SILICON
Polarity/Channel Type :
N-Channel
Tradename :
HyperFET
Input Capacitance (Ciss) (Max) @ Vds :
9200pF @ 25V
Fall Time (Typ) :
30 ns
Gate Charge (Qg) (Max) @ Vgs :
390nC @ 10V
Power Dissipation (Max) :
694W (Tc)
Pin Count :
4
Mount :
Chassis Mount
Gate to Source Voltage (Vgs) :
20V
Height :
9.6 mm
Qualification Status :
Not Qualified
Package / Case :
SOT-227-4, miniBLOC
Avalanche Energy Rating (Eas) :
4000 mJ
Mounting Style :
Chassis Mount
Configuration :
SINGLE WITH BUILT-IN DIODE
Terminal Finish :
Nickel (Ni)
Number of Channels :
1 Channel
Rds On (Max) @ Id, Vgs :
220m Ω @ 500mA, 10V
Pulsed Drain Current-Max (IDM) :
154 A
Drain to Source Breakdown Voltage :
900V
Transistor Application :
SWITCHING
Product Status :
Not For New Designs
Factory Lead Time :
8 Weeks
FET Type :
N-Channel
Turn-Off Delay Time :
125 ns
Minimum Operating Temperature :
- 55 C
RoHS :
Details
Pbfree Code :
yes
Vgs(th) (Max) @ Id :
5V @ 8mA
Length :
38.2 mm
Supplier Device Package :
SOT-227B
Drain-source On Resistance-Max :
0.2Ohm
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Case Connection :
DRAIN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Series :
HiPerFET™
Base Product Number :
IXFN39
Package Shape :
RECTANGULAR
Datasheets
IXFN39N90
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFN39N90 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:4, Number of Terminations:4, Mounting Type:Chassis Mount, Package / Case:SOT-227-4, miniBLOC, Number of Channels:1 Channel, IXFN39N90 pinout, IXFN39N90 datasheet PDF, IXFN39N90 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFN39N90 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFN39N90


N-Channel Tube 220m Ω @ 500mA, 10V ±20V 9200pF @ 25V 390nC @ 10V 900V SOT-227-4, miniBLOC

IXFN39N90 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 4000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 9200pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 39A.With a drain-source breakdown voltage of 900V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 900V.39 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 125 ns.Peak drain current for this device is 154 A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 900 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 900V.Using drive voltage (10V) reduces this device's overall power consumption.

IXFN39N90 Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 39A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 125 ns
based on its rated peak drain current 154 A.
a 900V drain to source voltage (Vdss)


IXFN39N90 Applications


There are a lot of IXYS
IXFN39N90 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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