IXFN39N90

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

38.2 mm

Factory Lead Time :

8 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Product Category :

Discrete Semiconductor Modules

Minimum Operating Temperature :

- 55 C

Additional Feature :

AVALANCHE RATED

RoHS :

Details

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.2Ohm

Package :

Tube

Terminal Form :

UNSPECIFIED

Surface Mount :

No

Pulsed Drain Current-Max (IDM) :

154 A

Transistor Polarity :

N-Channel

Polarity/Channel Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

UPPER

Avalanche Energy Rating (Eas) :

4000 mJ

Terminal Finish :

Nickel (Ni)

Brand :

IXYS

Supplier Device Package :

SOT-227B

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Product :

Power MOSFET Modules

JESD-30 Code :

R-PUFM-X4

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

900V

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

9200pF @ 25V

Number of Pins :

4

Rds On (Max) @ Id, Vgs :

220m Ω @ 500mA, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

25.07 mm

Number of Elements :

1

Height :

9.6 mm

Pbfree Code :

yes

Base Product Number :

IXFN39

FET Type :

N-Channel

Case Connection :

DRAIN

Number of Terminals :

4

Number of Channels :

1 Channel

Power Dissipation-Max (Abs) :

700 W

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

30 ns

Continuous Drain Current (ID) :

39A

Turn-Off Delay Time :

125 ns

Tradename :

HyperFET

Mounting Style :

Chassis Mount

Power Dissipation :

700W

Number of Terminations :

4

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

390nC @ 10V

FET Feature :

--

Mount :

Chassis Mount

Current - Continuous Drain (Id) @ 25°C :

39A Tc

Package / Case :

SOT-227-4, miniBLOC

Maximum Operating Temperature :

+ 150 C

Product Type :

Discrete Semiconductor Modules

Vgs(th) (Max) @ Id :

5V @ 8mA

Rise Time :

68ns

Published :

2001

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Breakdown Voltage :

900V

Reach Compliance Code :

Compliant

Drain Current-Max (Abs) (ID) :

39 A

Pin Count :

4

DS Breakdown Voltage-Min :

900 V

Power Dissipation (Max) :

694W (Tc)

Mounting Type :

Chassis Mount

Series :

HiPerFET™

Operating Mode :

ENHANCEMENT MODE

Manufacturer :

IXYS

RoHS Status :

RoHS Compliant

Power Dissipation-Max :

694W Tc

Product Status :

Not For New Designs

Package Shape :

RECTANGULAR