IXFN39N90

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Mfr.Part #
IXFN39N90
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 900V 39A SOT-227B
Stock
28,909
In Stock :
28,909

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Pin Count :
4
Power Dissipation :
700W
JESD-30 Code :
R-PUFM-X4
Reach Compliance Code :
Compliant
Drive Voltage (Max Rds On,Min Rds On) :
10V
Height :
9.6 mm
Package :
Tube
Fall Time (Typ) :
30 ns
Pulsed Drain Current-Max (IDM) :
154 A
Product Category :
Discrete Semiconductor Modules
Product Type :
Discrete Semiconductor Modules
Mounting Type :
Chassis Mount
Gate Charge (Qg) (Max) @ Vgs :
390nC @ 10V
Length :
38.2 mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
4
Power Dissipation-Max :
694W Tc
Supplier Device Package :
SOT-227B
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Package Shape :
RECTANGULAR
Power Dissipation (Max) :
694W (Tc)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Product :
Power MOSFET Modules
Terminal Finish :
Nickel (Ni)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Application :
SWITCHING
Package / Case :
SOT-227-4, miniBLOC
Power Dissipation-Max (Abs) :
700 W
Factory Lead Time :
8 Weeks
Drain Current-Max (Abs) (ID) :
39 A
Minimum Operating Temperature :
- 55 C
Number of Channels :
1 Channel
Vgs (Max) :
±20V
Mounting Style :
Chassis Mount
Product Status :
Not For New Designs
Qualification Status :
Not Qualified
Pbfree Code :
yes
Terminal Position :
UPPER
DS Breakdown Voltage-Min :
900 V
Additional Feature :
AVALANCHE RATED
Drain-source On Resistance-Max :
0.2Ohm
Terminal Form :
UNSPECIFIED
Operating Mode :
ENHANCEMENT MODE
Avalanche Energy Rating (Eas) :
4000 mJ
Rds On (Max) @ Id, Vgs :
220m Ω @ 500mA, 10V
Mount :
Chassis Mount
Width :
25.07 mm
Continuous Drain Current (ID) :
39A
Manufacturer :
IXYS
Case Connection :
DRAIN
Rise Time :
68ns
Transistor Element Material :
SILICON
FET Type :
N-Channel
Packaging :
Tube
Operating Temperature :
-55°C~150°C TJ
Configuration :
SINGLE WITH BUILT-IN DIODE
Current - Continuous Drain (Id) @ 25°C :
39A Tc
Tradename :
HyperFET
Series :
HiPerFET™
Polarity/Channel Type :
N-Channel
Number of Terminals :
4
Turn-Off Delay Time :
125 ns
Surface Mount :
No
Maximum Operating Temperature :
+ 150 C
Published :
2001
Brand :
IXYS
RoHS Status :
RoHS Compliant
Base Product Number :
IXFN39
Input Capacitance (Ciss) (Max) @ Vds :
9200pF @ 25V
Gate to Source Voltage (Vgs) :
20V
Vgs(th) (Max) @ Id :
5V @ 8mA
Transistor Polarity :
N-Channel
Number of Elements :
1
FET Feature :
--
RoHS :
Details
Number of Pins :
4
Drain to Source Breakdown Voltage :
900V
Drain to Source Voltage (Vdss) :
900V
Datasheets
IXFN39N90
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFN39N90 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Chassis Mount, Number of Terminations:4, Package / Case:SOT-227-4, miniBLOC, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Number of Pins:4, IXFN39N90 pinout, IXFN39N90 datasheet PDF, IXFN39N90 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFN39N90 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFN39N90


N-Channel Tube 220m Ω @ 500mA, 10V ±20V 9200pF @ 25V 390nC @ 10V 900V SOT-227-4, miniBLOC

IXFN39N90 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 4000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 9200pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 39A.With a drain-source breakdown voltage of 900V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 900V.39 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 125 ns.Peak drain current for this device is 154 A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 900 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 900V.Using drive voltage (10V) reduces this device's overall power consumption.

IXFN39N90 Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 39A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 125 ns
based on its rated peak drain current 154 A.
a 900V drain to source voltage (Vdss)


IXFN39N90 Applications


There are a lot of IXYS
IXFN39N90 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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