IXFN39N90

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Product Category :

Discrete Semiconductor Modules

Brand :

IXYS

DS Breakdown Voltage-Min :

900 V

Maximum Operating Temperature :

+ 150 C

Transistor Polarity :

N-Channel

Terminal Form :

UNSPECIFIED

Drain Current-Max (Abs) (ID) :

39 A

Power Dissipation-Max :

694W Tc

FET Feature :

--

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

No

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

Number of Pins :

4

Power Dissipation :

700W

RoHS Status :

RoHS Compliant

Number of Terminations :

4

Mounting Type :

Chassis Mount

Continuous Drain Current (ID) :

39A

Manufacturer :

IXYS

Published :

2001

Power Dissipation-Max (Abs) :

700 W

JESD-30 Code :

R-PUFM-X4

Drain to Source Voltage (Vdss) :

900V

Width :

25.07 mm

Reach Compliance Code :

Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

68ns

Product Type :

Discrete Semiconductor Modules

Current - Continuous Drain (Id) @ 25°C :

39A Tc

Package :

Tube

Number of Terminals :

4

Number of Elements :

1

Terminal Position :

UPPER

Product :

Power MOSFET Modules

Additional Feature :

AVALANCHE RATED

Transistor Element Material :

SILICON

Polarity/Channel Type :

N-Channel

Tradename :

HyperFET

Input Capacitance (Ciss) (Max) @ Vds :

9200pF @ 25V

Fall Time (Typ) :

30 ns

Gate Charge (Qg) (Max) @ Vgs :

390nC @ 10V

Power Dissipation (Max) :

694W (Tc)

Pin Count :

4

Mount :

Chassis Mount

Gate to Source Voltage (Vgs) :

20V

Height :

9.6 mm

Qualification Status :

Not Qualified

Package / Case :

SOT-227-4, miniBLOC

Avalanche Energy Rating (Eas) :

4000 mJ

Mounting Style :

Chassis Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Nickel (Ni)

Number of Channels :

1 Channel

Rds On (Max) @ Id, Vgs :

220m Ω @ 500mA, 10V

Pulsed Drain Current-Max (IDM) :

154 A

Drain to Source Breakdown Voltage :

900V

Transistor Application :

SWITCHING

Product Status :

Not For New Designs

Factory Lead Time :

8 Weeks

FET Type :

N-Channel

Turn-Off Delay Time :

125 ns

Minimum Operating Temperature :

- 55 C

RoHS :

Details

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

5V @ 8mA

Length :

38.2 mm

Supplier Device Package :

SOT-227B

Drain-source On Resistance-Max :

0.2Ohm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HiPerFET™

Base Product Number :

IXFN39

Package Shape :

RECTANGULAR