IXFN39N90
- Mfr.Part #
- IXFN39N90
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 39A SOT-227B
- Stock
- 28,909
- In Stock :
- 28,909
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 4
- Power Dissipation :
- 700W
- JESD-30 Code :
- R-PUFM-X4
- Reach Compliance Code :
- Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Height :
- 9.6 mm
- Package :
- Tube
- Fall Time (Typ) :
- 30 ns
- Pulsed Drain Current-Max (IDM) :
- 154 A
- Product Category :
- Discrete Semiconductor Modules
- Product Type :
- Discrete Semiconductor Modules
- Mounting Type :
- Chassis Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 390nC @ 10V
- Length :
- 38.2 mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 4
- Power Dissipation-Max :
- 694W Tc
- Supplier Device Package :
- SOT-227B
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package Shape :
- RECTANGULAR
- Power Dissipation (Max) :
- 694W (Tc)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Product :
- Power MOSFET Modules
- Terminal Finish :
- Nickel (Ni)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Package / Case :
- SOT-227-4, miniBLOC
- Power Dissipation-Max (Abs) :
- 700 W
- Factory Lead Time :
- 8 Weeks
- Drain Current-Max (Abs) (ID) :
- 39 A
- Minimum Operating Temperature :
- - 55 C
- Number of Channels :
- 1 Channel
- Vgs (Max) :
- ±20V
- Mounting Style :
- Chassis Mount
- Product Status :
- Not For New Designs
- Qualification Status :
- Not Qualified
- Pbfree Code :
- yes
- Terminal Position :
- UPPER
- DS Breakdown Voltage-Min :
- 900 V
- Additional Feature :
- AVALANCHE RATED
- Drain-source On Resistance-Max :
- 0.2Ohm
- Terminal Form :
- UNSPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Avalanche Energy Rating (Eas) :
- 4000 mJ
- Rds On (Max) @ Id, Vgs :
- 220m Ω @ 500mA, 10V
- Mount :
- Chassis Mount
- Width :
- 25.07 mm
- Continuous Drain Current (ID) :
- 39A
- Manufacturer :
- IXYS
- Case Connection :
- DRAIN
- Rise Time :
- 68ns
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Packaging :
- Tube
- Operating Temperature :
- -55°C~150°C TJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Current - Continuous Drain (Id) @ 25°C :
- 39A Tc
- Tradename :
- HyperFET
- Series :
- HiPerFET™
- Polarity/Channel Type :
- N-Channel
- Number of Terminals :
- 4
- Turn-Off Delay Time :
- 125 ns
- Surface Mount :
- No
- Maximum Operating Temperature :
- + 150 C
- Published :
- 2001
- Brand :
- IXYS
- RoHS Status :
- RoHS Compliant
- Base Product Number :
- IXFN39
- Input Capacitance (Ciss) (Max) @ Vds :
- 9200pF @ 25V
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Transistor Polarity :
- N-Channel
- Number of Elements :
- 1
- FET Feature :
- --
- RoHS :
- Details
- Number of Pins :
- 4
- Drain to Source Breakdown Voltage :
- 900V
- Drain to Source Voltage (Vdss) :
- 900V
- Datasheets
- IXFN39N90

N-Channel Tube 220m Ω @ 500mA, 10V ±20V 9200pF @ 25V 390nC @ 10V 900V SOT-227-4, miniBLOC
IXFN39N90 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 4000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 9200pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 39A.With a drain-source breakdown voltage of 900V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 900V.39 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 125 ns.Peak drain current for this device is 154 A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 900 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 900V.Using drive voltage (10V) reduces this device's overall power consumption.
IXFN39N90 Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 39A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 125 ns
based on its rated peak drain current 154 A.
a 900V drain to source voltage (Vdss)
IXFN39N90 Applications
There are a lot of IXYS
IXFN39N90 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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