IXFN39N90

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

39A Tc

Base Product Number :

IXFN39

Gate to Source Voltage (Vgs) :

20V

DS Breakdown Voltage-Min :

900 V

Package / Case :

SOT-227-4, miniBLOC

Mounting Type :

Chassis Mount

Maximum Operating Temperature :

+ 150 C

Number of Pins :

4

Package Shape :

RECTANGULAR

Number of Channels :

1 Channel

Terminal Finish :

Nickel (Ni)

Rise Time :

68ns

Series :

HiPerFET™

Product Category :

Discrete Semiconductor Modules

Reach Compliance Code :

Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

1

Power Dissipation-Max :

694W Tc

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

39 A

Surface Mount :

No

Drain-source On Resistance-Max :

0.2Ohm

Avalanche Energy Rating (Eas) :

4000 mJ

Number of Terminations :

4

Height :

9.6 mm

Mount :

Chassis Mount

Package :

Tube

Continuous Drain Current (ID) :

39A

Supplier Device Package :

SOT-227B

Power Dissipation-Max (Abs) :

700 W

RoHS :

Details

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Polarity :

N-Channel

Fall Time (Typ) :

30 ns

Product Type :

Discrete Semiconductor Modules

Power Dissipation (Max) :

694W (Tc)

Factory Lead Time :

8 Weeks

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED

Drain to Source Breakdown Voltage :

900V

Product :

Power MOSFET Modules

Pbfree Code :

yes

Case Connection :

DRAIN

Terminal Position :

UPPER

Pin Count :

4

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

RoHS Compliant

Turn-Off Delay Time :

125 ns

Vgs(th) (Max) @ Id :

5V @ 8mA

Terminal Form :

UNSPECIFIED

FET Feature :

--

Length :

38.2 mm

Published :

2001

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminals :

4

Mounting Style :

Chassis Mount

Power Dissipation :

700W

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

154 A

Brand :

IXYS

Input Capacitance (Ciss) (Max) @ Vds :

9200pF @ 25V

Polarity/Channel Type :

N-Channel

Transistor Application :

SWITCHING

Minimum Operating Temperature :

- 55 C

JESD-30 Code :

R-PUFM-X4

Drain to Source Voltage (Vdss) :

900V

Tradename :

HyperFET

Rds On (Max) @ Id, Vgs :

220m Ω @ 500mA, 10V

Gate Charge (Qg) (Max) @ Vgs :

390nC @ 10V

Width :

25.07 mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Manufacturer :

IXYS

Product Status :

Not For New Designs