IXFN38N100Q2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

4

Turn-Off Delay Time :

57 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

yes

RoHS :

Details

Reach Compliance Code :

Compliant

RoHS Status :

RoHS Compliant

Drain Current-Max (Abs) (ID) :

38 A

Tradename :

HiPerFET

Base Product Number :

IXFN38

Mount :

Chassis Mount

Input Capacitance (Ciss) (Max) @ Vds :

7200pF @ 25V

Series :

HiPerFET™

Height :

9.6 mm

Product Category :

Discrete Semiconductor Modules

Gate to Source Voltage (Vgs) :

30V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Brand :

IXYS

Product :

Power MOSFET Modules

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Width :

25.42 mm

JESD-30 Code :

R-PUFM-X4

Surface Mount :

No

Package / Case :

SOT-227-4, miniBLOC

Package :

Tube

Number of Terminals :

4

Drain to Source Voltage (Vdss) :

1000V

Power Dissipation (Max) :

890W (Tc)

Terminal Form :

UNSPECIFIED

Pulsed Drain Current-Max (IDM) :

152A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Polarity :

N-Channel

Qualification Status :

Not Qualified

Power Dissipation :

890W

Product Type :

Discrete Semiconductor Modules

Vgs (Max) :

±30V

Number of Elements :

1

Number of Terminations :

4

Maximum Operating Temperature :

+ 150 C

Published :

2003

Mounting Style :

Chassis Mount

Package Shape :

RECTANGULAR

Additional Feature :

AVALANCHE RATED

Terminal Position :

UPPER

Manufacturer :

IXYS

Transistor Element Material :

SILICON

Number of Pins :

4

Fall Time (Typ) :

15 ns

Drain to Source Breakdown Voltage :

1kV

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Product Status :

Not For New Designs

Vgs(th) (Max) @ Id :

5V @ 8mA

Rise Time :

28ns

Polarity/Channel Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

890W Tc

Avalanche Energy Rating (Eas) :

5000 mJ

Case Connection :

Isolated

Current - Continuous Drain (Id) @ 25°C :

38A Tc

Mounting Type :

Chassis Mount

FET Feature :

--

Length :

38.23 mm

Rds On (Max) @ Id, Vgs :

250m Ω @ 19A, 10V

DS Breakdown Voltage-Min :

1000 V

Continuous Drain Current (ID) :

38A

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.25Ohm

Terminal Finish :

Nickel (Ni)

Factory Lead Time :

8 Weeks

Power Dissipation-Max (Abs) :

890 W

Supplier Device Package :

SOT-227B

Number of Channels :

1 Channel

Minimum Operating Temperature :

- 55 C

Lead Free :

Lead Free

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 10V

Operating Temperature :

-55°C~150°C TJ