IXFN38N100Q2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

RoHS Compliant

Power Dissipation :

890W

Tradename :

HiPerFET

Number of Channels :

1 Channel

Polarity/Channel Type :

N-Channel

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

5000 mJ

Drain-source On Resistance-Max :

0.25Ohm

Qualification Status :

Not Qualified

Product Status :

Not For New Designs

Additional Feature :

AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 10V

RoHS :

Details

DS Breakdown Voltage-Min :

1000 V

Rise Time :

28ns

Package / Case :

SOT-227-4, miniBLOC

Brand :

IXYS

Reach Compliance Code :

Compliant

Power Dissipation (Max) :

890W (Tc)

Drain to Source Voltage (Vdss) :

1000V

Height :

9.6 mm

Transistor Application :

SWITCHING

Maximum Operating Temperature :

+ 150 C

Input Capacitance (Ciss) (Max) @ Vds :

7200pF @ 25V

Supplier Device Package :

SOT-227B

Gate to Source Voltage (Vgs) :

30V

Published :

2003

Surface Mount :

No

Product :

Power MOSFET Modules

Lead Free :

Lead Free

Number of Pins :

4

Mounting Style :

Chassis Mount

Width :

25.42 mm

Minimum Operating Temperature :

- 55 C

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

UNSPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max (Abs) :

890 W

Vgs (Max) :

±30V

Drain Current-Max (Abs) (ID) :

38 A

Vgs(th) (Max) @ Id :

5V @ 8mA

Factory Lead Time :

8 Weeks

Mount :

Chassis Mount

Manufacturer :

IXYS

Series :

HiPerFET™

Number of Terminals :

4

Base Product Number :

IXFN38

Length :

38.23 mm

Packaging :

Tube

Case Connection :

Isolated

Number of Terminations :

4

Product Type :

Discrete Semiconductor Modules

Fall Time (Typ) :

15 ns

Pin Count :

4

Terminal Position :

UPPER

Power Dissipation-Max :

890W Tc

Drain to Source Breakdown Voltage :

1kV

Pulsed Drain Current-Max (IDM) :

152A

Transistor Polarity :

N-Channel

Rds On (Max) @ Id, Vgs :

250m Ω @ 19A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Nickel (Ni)

Package :

Tube

Turn-Off Delay Time :

57 ns

Product Category :

Discrete Semiconductor Modules

Continuous Drain Current (ID) :

38A

Mounting Type :

Chassis Mount

Current - Continuous Drain (Id) @ 25°C :

38A Tc

JESD-30 Code :

R-PUFM-X4

Configuration :

SINGLE WITH BUILT-IN DIODE

Package Shape :

RECTANGULAR

FET Feature :

--

Number of Elements :

1

Transistor Element Material :

SILICON