IXFN38N100Q2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Tradename :

HiPerFET

Package Shape :

RECTANGULAR

Terminal Position :

UPPER

Drain-source On Resistance-Max :

0.25Ohm

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

38A Tc

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Chassis Mount

FET Feature :

--

Pin Count :

4

Vgs(th) (Max) @ Id :

5V @ 8mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

1000V

Drain to Source Breakdown Voltage :

1kV

Number of Terminals :

4

Package / Case :

SOT-227-4, miniBLOC

Height :

9.6 mm

Length :

38.23 mm

Product Type :

Discrete Semiconductor Modules

Rds On (Max) @ Id, Vgs :

250m Ω @ 19A, 10V

Polarity/Channel Type :

N-Channel

RoHS Status :

RoHS Compliant

Product :

Power MOSFET Modules

Number of Pins :

4

Series :

HiPerFET™

Packaging :

Tube

Gate to Source Voltage (Vgs) :

30V

Avalanche Energy Rating (Eas) :

5000 mJ

Base Product Number :

IXFN38

RoHS :

Details

Power Dissipation :

890W

Vgs (Max) :

±30V

Drain Current-Max (Abs) (ID) :

38 A

Transistor Polarity :

N-Channel

Terminal Finish :

Nickel (Ni)

Number of Channels :

1 Channel

Lead Free :

Lead Free

Product Status :

Not For New Designs

DS Breakdown Voltage-Min :

1000 V

Configuration :

SINGLE WITH BUILT-IN DIODE

Manufacturer :

IXYS

Maximum Operating Temperature :

+ 150 C

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 10V

Surface Mount :

No

Supplier Device Package :

SOT-227B

Power Dissipation-Max :

890W Tc

Brand :

IXYS

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Additional Feature :

AVALANCHE RATED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

UNSPECIFIED

Pbfree Code :

yes

Minimum Operating Temperature :

- 55 C

Reach Compliance Code :

Compliant

Continuous Drain Current (ID) :

38A

Product Category :

Discrete Semiconductor Modules

Turn-Off Delay Time :

57 ns

Mount :

Chassis Mount

Pulsed Drain Current-Max (IDM) :

152A

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

7200pF @ 25V

Power Dissipation (Max) :

890W (Tc)

JESD-30 Code :

R-PUFM-X4

Number of Terminations :

4

Package :

Tube

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Width :

25.42 mm

Power Dissipation-Max (Abs) :

890 W

Mounting Style :

Chassis Mount

Factory Lead Time :

8 Weeks

Rise Time :

28ns

Fall Time (Typ) :

15 ns

Case Connection :

Isolated

Published :

2003

Drive Voltage (Max Rds On,Min Rds On) :

10V