IXFN38N100P

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Mfr.Part #
IXFN38N100P
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 1000V 38A SOT-227B
Stock
792
In Stock :
792

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Radiation Hardening :
No
FET Feature :
--
Power Dissipation (Max) :
1000W (Tc)
Lead Free :
Lead Free
Operating Temperature :
-55°C~150°C TJ
Width :
25.42 mm
Vgs (Max) :
±30V
Operating Mode :
ENHANCEMENT MODE
RoHS Status :
ROHS3 Compliant
Number of Terminations :
4
Product Status :
Active
Tradename :
HiPerFET
Polarity/Channel Type :
N-Channel
Avalanche Energy Rating (Eas) :
2000 mJ
Continuous Drain Current (ID) :
38A
Mount :
Chassis Mount, Screw
Drain to Source Breakdown Voltage :
1kV
Package :
Tube
Number of Elements :
1
Length :
38.23 mm
Qualification Status :
Not Qualified
Power Dissipation-Max (Abs) :
1000 W
Power Dissipation-Max :
1000W Tc
Type :
HiPerFET
Transistor Element Material :
SILICON
Series :
HiPerFET™, PolarP2™
Drain to Source Voltage (Vdss) :
1000V
Published :
2009
Rise Time :
55ns
Input Capacitance (Ciss) (Max) @ Vds :
24000pF @ 25V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tube
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Channels :
1 Channel
Number of Terminals :
4
Mounting Style :
Screw Mounts
Drain-source On Resistance-Max :
0.21 Ω
Current - Continuous Drain (Id) @ 25°C :
38A Tc
Mounting Type :
Chassis Mount
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Product Category :
Discrete Semiconductor Modules
Terminal Finish :
Nickel (Ni)
Pin Count :
4
Configuration :
SINGLE WITH BUILT-IN DIODE
Product Type :
Discrete Semiconductor Modules
Pulsed Drain Current-Max (IDM) :
120 A
Manufacturer :
IXYS
Gate Charge (Qg) (Max) @ Vgs :
350nC @ 10V
Case Connection :
Isolated
FET Type :
N-Channel
Base Product Number :
IXFN38
Surface Mount :
No
Terminal Form :
UNSPECIFIED
Resistance :
210mOhm
Transistor Application :
SWITCHING
JESD-30 Code :
R-PUFM-X4
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Pins :
4
Supplier Device Package :
SOT-227B
RoHS :
Details
Factory Lead Time :
20 Weeks
Rds On (Max) @ Id, Vgs :
210m Ω @ 19A, 10V
Turn-Off Delay Time :
71 ns
Package Shape :
RECTANGULAR
Pbfree Code :
yes
Transistor Polarity :
N-Channel
Brand :
IXYS
Terminal Position :
UPPER
Power Dissipation :
1kW
Height :
9.6 mm
Gate to Source Voltage (Vgs) :
30V
Maximum Operating Temperature :
+ 150 C
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
Reach Compliance Code :
Compliant
Package / Case :
SOT-227-4, miniBLOC
Drain Current-Max (Abs) (ID) :
38 A
Product :
Power MOSFET Modules
Fall Time (Typ) :
40 ns
Minimum Operating Temperature :
- 55 C
DS Breakdown Voltage-Min :
1000 V
Vgs(th) (Max) @ Id :
6.5V @ 1mA
Datasheets
IXFN38N100P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFN38N100P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:4, Type:HiPerFET, Number of Channels:1 Channel, Mounting Type:Chassis Mount, Number of Pins:4, Package / Case:SOT-227-4, miniBLOC, IXFN38N100P pinout, IXFN38N100P datasheet PDF, IXFN38N100P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFN38N100P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFN38N100P


N-Channel Tube 210m Ω @ 19A, 10V ±30V 24000pF @ 25V 350nC @ 10V 1000V SOT-227-4, miniBLOC

IXFN38N100P Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 24000pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 38A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=1kV. And this device has 1kV drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 38 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 71 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 120 A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 1000 V in order to maintain normal operation.Operating this transistor requires a 1000V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFN38N100P Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 38A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 71 ns
based on its rated peak drain current 120 A.
a 1000V drain to source voltage (Vdss)


IXFN38N100P Applications


There are a lot of IXYS
IXFN38N100P applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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