IXFN36N60

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4.5V @ 8mA

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

8 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

SOT-227-4, miniBLOC

Transistor Element Material :

SILICON

Mounting Type :

Chassis Mount

Product Category :

Discrete Semiconductor Modules

Base Product Number :

IXFN36

Number of Channels :

1 Channel

Qualification Status :

Not Qualified

Number of Terminals :

4

Input Capacitance (Ciss) (Max) @ Vds :

9000pF @ 25V

Current Rating :

36A

Height :

9.6 mm

Brand :

IXYS

Pin Count :

4

Reach Compliance Code :

Compliant

FET Feature :

--

Packaging :

Tube

Number of Pins :

4

Power Dissipation-Max :

520W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

36A Tc

Width :

25.42 mm

Maximum Operating Temperature :

+ 150 C

Moisture Sensitivity Level (MSL) :

Not Applicable

Mounting Style :

Chassis Mount

Power Dissipation Ambient-Max :

520 W

RoHS :

Details

Terminal Position :

UPPER

Drain Current-Max (Abs) (ID) :

36 A

DS Breakdown Voltage-Min :

600 V

Published :

1996

Pulsed Drain Current-Max (IDM) :

144 A

Minimum Operating Temperature :

- 55 C

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

UNSPECIFIED

Gate to Source Voltage (Vgs) :

20V

Surface Mount :

No

Package :

Tube

Supplier Device Package :

SOT-227B

JESD-30 Code :

R-PUFM-X4

Transistor Application :

SWITCHING

Power Dissipation :

520W

Operating Mode :

ENHANCEMENT MODE

Polarity/Channel Type :

N-Channel

Drain-source On Resistance-Max :

0.18ohm

Voltage - Rated DC :

600V

Terminal Finish :

Nickel (Ni)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

60 ns

Product :

Power MOSFET Modules

Product Type :

Discrete Semiconductor Modules

Number of Elements :

1

Length :

38.23 mm

Series :

HiPerFET™

Case Connection :

Isolated

Mount :

Chassis Mount, Screw

Rds On (Max) @ Id, Vgs :

180m Ω @ 500mA, 10V

Drain to Source Voltage (Vdss) :

600V

Package Shape :

RECTANGULAR

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Manufacturer :

IXYS

Power Dissipation (Max) :

520W (Tc)

FET Type :

N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Breakdown Voltage :

600V

Turn-Off Delay Time :

100 ns

Rise Time :

45ns

Product Status :

Not For New Designs

Transistor Polarity :

N-Channel

Power Dissipation-Max (Abs) :

520 W

Tradename :

HyperFET

Pbfree Code :

yes

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

36A

Additional Feature :

AVALANCHE RATED

Number of Terminations :

4

Gate Charge (Qg) (Max) @ Vgs :

325nC @ 10V