IXFN36N60

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

36A

RoHS :

Details

Tradename :

HyperFET

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max (Abs) :

520 W

Drain-source On Resistance-Max :

0.18ohm

Turn-Off Delay Time :

100 ns

Supplier Device Package :

SOT-227B

Rise Time :

45ns

Manufacturer :

IXYS

Length :

38.23 mm

Moisture Sensitivity Level (MSL) :

Not Applicable

Number of Channels :

1 Channel

Rds On (Max) @ Id, Vgs :

180m Ω @ 500mA, 10V

Surface Mount :

No

Transistor Application :

SWITCHING

Polarity/Channel Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Nickel (Ni)

Case Connection :

Isolated

Power Dissipation (Max) :

520W (Tc)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

SOT-227-4, miniBLOC

Product :

Power MOSFET Modules

Package Shape :

RECTANGULAR

Gate to Source Voltage (Vgs) :

20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Product Status :

Not For New Designs

Qualification Status :

Not Qualified

Lead Free :

Lead Free

Mount :

Chassis Mount, Screw

Base Product Number :

IXFN36

Factory Lead Time :

8 Weeks

Additional Feature :

AVALANCHE RATED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

60 ns

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

520W

Current - Continuous Drain (Id) @ 25°C :

36A Tc

Pulsed Drain Current-Max (IDM) :

144 A

DS Breakdown Voltage-Min :

600 V

Reach Compliance Code :

Compliant

Number of Terminations :

4

Drain to Source Voltage (Vdss) :

600V

Vgs(th) (Max) @ Id :

4.5V @ 8mA

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Chassis Mount

Gate Charge (Qg) (Max) @ Vgs :

325nC @ 10V

Package :

Tube

FET Type :

N-Channel

Terminal Form :

UNSPECIFIED

Mounting Style :

Chassis Mount

Power Dissipation Ambient-Max :

520 W

Packaging :

Tube

Published :

1996

Drain to Source Breakdown Voltage :

600V

Vgs (Max) :

±20V

Power Dissipation-Max :

520W Tc

Terminal Position :

UPPER

Width :

25.42 mm

Input Capacitance (Ciss) (Max) @ Vds :

9000pF @ 25V

Transistor Polarity :

N-Channel

Pin Count :

4

Series :

HiPerFET™

Brand :

IXYS

Number of Terminals :

4

FET Feature :

--

Product Category :

Discrete Semiconductor Modules

Number of Pins :

4

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Continuous Drain Current (ID) :

36A

Height :

9.6 mm

Product Type :

Discrete Semiconductor Modules

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

36 A

Voltage - Rated DC :

600V

JESD-30 Code :

R-PUFM-X4

Number of Elements :

1