IXFN36N100

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Supplier Device Package :

SOT-227B

Series :

HiPerFET™

Polarity/Channel Type :

N-Channel

JESD-30 Code :

R-PUFM-X4

Power Dissipation :

700W

Type :

HiPerFET

Termination :

Screw

Drain to Source Breakdown Voltage :

1kV

Terminal Finish :

Nickel (Ni)

REACH SVHC :

No SVHC

Rise Time :

55ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS :

Details

Fall Time (Typ) :

30 ns

Gate Charge (Qg) (Max) @ Vgs :

380nC @ 10V

FET Type :

N-Channel

Resistance :

240mOhm

Turn On Delay Time :

41 ns

Pin Count :

4

Drain-source On Resistance-Max :

0.24 Ω

Channel Type :

N

Operating Mode :

ENHANCEMENT MODE

Isolation Voltage :

2.5kV

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

1000V

Input Capacitance (Ciss) (Max) @ Vds :

9200pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Brand :

IXYS

Qualification :

-

Continuous Drain Current Id :

36A

Number of Elements per Chip :

1

Transistor Application :

SWITCHING

Power Dissipation (Max) :

700W (Tc)

Qualification Status :

Not Qualified

Packaging :

Tube

Configuration :

Single

Manufacturer :

IXYS

Surface Mount :

No

Package Shape :

RECTANGULAR

Product Status :

Not For New Designs

Moisture Sensitivity Level (MSL) :

Not Applicable

Current Rating :

36A

Current - Continuous Drain (Id) @ 25°C :

36A Tc

ECCN Code :

EAR99

Minimum Operating Temperature :

-55 °C

Reach Compliance Code :

Compliant

Voltage - Rated DC :

1kV

Pbfree Code :

yes

Width :

25.42mm

Rds On (Max) @ Id, Vgs :

240m Ω @ 500mA, 10V

DS Breakdown Voltage-Min :

1000 V

Power Dissipation-Max :

700W Tc

Avalanche Energy Rating (Eas) :

4000 mJ

Drain Current-Max (Abs) (ID) :

36 A

Number of Pins :

3

Tradename :

HyperFET

Operating Temperature :

-55°C~150°C TJ

Published :

2003

Threshold Voltage :

5V

Mount :

Chassis Mount, Panel, Screw

Product :

Power MOSFET Modules

Case Connection :

DRAIN

Element Configuration :

Single

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

FET Feature :

--

Terminal Position :

UPPER

Power Dissipation-Max (Abs) :

700 W

Terminal Form :

UNSPECIFIED

Dual Supply Voltage :

1kV

Package Type :

SOT-227

Length :

38.23mm

Maximum Operating Temperature :

+150 °C

Mounting Type :

Chassis Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Product Category :

Discrete Semiconductor Modules

Product Type :

Discrete Semiconductor Modules

Channel Mode :

Enhancement

Number of Terminations :

4

Mounting Style :

Screw Mounts

Additional Feature :

AVALANCHE RATED

Vgs(th) (Max) @ Id :

5V @ 8mA

Number of Terminals :

4

Package / Case :

SOT-227-4, miniBLOC

Lead Free :

Lead Free

Base Product Number :

IXFN36

RoHS Status :

ROHS3 Compliant

Weight :

46g

Transistor Polarity :

N-Channel

MSL :

-

Height :

9.6mm

Package :

Tube

Nominal Vgs :

5 V

Turn-Off Delay Time :

110 ns

Continuous Drain Current (ID) :

36A

Pulsed Drain Current-Max (IDM) :

144 A

Factory Lead Time :

4 Weeks

Number of Channels :

1 Channel