IXFN360N15T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Package Type :

SOT-227

RoHS :

Details

Product Category :

Discrete Semiconductor Modules

Min Operating Temperature :

-55 °C

Max Operating Temperature :

175 °C

Additional Feature :

UL RECOGNIZED, AVALANCHE RATED

Surface Mount :

No

Packaging :

Tube

Polarity/Channel Type :

N-Channel

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

150V

Length :

38.23mm

Brand :

IXYS

Series :

GigaMOS™

Transistor Element Material :

SILICON

Package Shape :

RECTANGULAR

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

115 ns

Width :

25.07mm

Number of Terminals :

4

Vgs(th) (Max) @ Id :

5V @ 8mA

Product Status :

Active

Rds On Max :

4 mΩ

Channel Type :

N

Factory Lead Time :

30 Weeks

Number of Terminations :

4

Number of Elements :

1

Power Dissipation-Max (Abs) :

1070 W

Base Product Number :

IXFN360

FET Technology :

METAL-OXIDE SEMICONDUCTOR

DS Breakdown Voltage-Min :

150 V

Gate Charge (Qg) (Max) @ Vgs :

715nC @ 10V

Continuous Drain Current (ID) :

310A

Power Dissipation-Max :

1070W Tc

FET Feature :

--

Mounting Type :

Chassis Mount

Drain-source On Resistance-Max :

0.004 Ω

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

310 A

Power Dissipation (Max) :

1070W (Tc)

Number of Outputs :

1

Channel Mode :

Enhancement

Supplier Device Package :

SOT-227B

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Minimum Operating Temperature :

-55 °C

Mount :

Chassis Mount

Fall Time (Typ) :

265 ns

Resistance :

4mOhm

Operating Mode :

ENHANCEMENT MODE

Package / Case :

SOT-227-4, miniBLOC

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Manufacturer :

IXYS

Transistor Polarity :

N-Channel

ECCN Code :

EAR99

Tradename :

HiPerFET

Type :

GigaMOS Trench T2 HiperFet

Output Current :

310A

Pbfree Code :

yes

Published :

2009

Product :

Power MOSFET Modules

Rise Time :

170ns

Output Voltage :

150V

Terminal Form :

UNSPECIFIED

Vgs (Max) :

±20V

Input Capacitance :

47.5 nF

Height :

9.6mm

Configuration :

SINGLE WITH BUILT-IN DIODE

Product Type :

Discrete Semiconductor Modules

RoHS Status :

ROHS3 Compliant

Drain to Source Resistance :

4 mΩ

Number of Elements per Chip :

1

Input Capacitance (Ciss) (Max) @ Vds :

47500pF @ 25V

Lead Free :

Lead Free

Case Connection :

Isolated

Maximum Operating Temperature :

+175 °C

Rds On (Max) @ Id, Vgs :

4m Ω @ 60A, 10V

Turn On Delay Time :

50 ns

Terminal Position :

UPPER

Current - Continuous Drain (Id) @ 25°C :

310A Tc

Max Power Dissipation :

1.07 kW

FET Type :

N-Channel

Nominal Supply Current :

100A

Reach Compliance Code :

Unknown

Terminal Finish :

Nickel

Number of Channels :

1 Channel

Pulsed Drain Current-Max (IDM) :

900A

Turn-On Delay Time :

50 ns

Mounting Style :

Screw Mounts

Operating Temperature :

-55°C~175°C TJ

Pin Count :

4

JESD-30 Code :

R-PUFM-X4

Package :

Tube