IXFN360N10T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

Single

Tradename :

HiPerFET

Supplier Device Package :

SOT-227B

Fall Time (Typ) :

160 ns

Channel Mode :

Enhancement

Resistance :

2.6MOhm

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

360A Tc

Number of Pins :

4

Series :

HiPerFET™

FET Type :

N-Channel

Number of Channels :

1 Channel

Product :

Power MOSFET Modules

Turn-Off Delay Time :

80 ns

Minimum Operating Temperature :

-55 °C

Reach Compliance Code :

Unknown

Number of Elements :

1

Height :

9.6mm

RoHS :

Details

Power Dissipation-Max :

830W Tc

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

100V

Number of Terminations :

4

Radiation Hardening :

No

Rise Time :

100ns

Terminal Form :

UNSPECIFIED

Product Category :

Discrete Semiconductor Modules

FET Feature :

--

Continuous Drain Current (ID) :

360A

Mounting Style :

Screw Mounts

Product Type :

Discrete Semiconductor Modules

Package :

Tube

Factory Lead Time :

30 Weeks

Power Dissipation (Max) :

830W (Tc)

RoHS Status :

ROHS3 Compliant

Min Operating Temperature :

-55 °C

Brand :

IXYS

Published :

2009

Operating Mode :

ENHANCEMENT MODE

Manufacturer :

IXYS

Transistor Polarity :

N-Channel

Pulsed Drain Current-Max (IDM) :

900A

Product Status :

Active

Packaging :

Tube

Continuous Drain Current Id :

360A

Element Configuration :

Single

Package Type :

SOT-227

Gate Charge (Qg) (Max) @ Vgs :

505nC @ 10V

Pin Count :

4

Avalanche Energy Rating (Eas) :

2000 mJ

Package / Case :

SOT-227-4, miniBLOC

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Input Capacitance :

36 nF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

25.07mm

Terminal Position :

UPPER

Rds On (Max) @ Id, Vgs :

2.6m Ω @ 180A, 10V

Maximum Operating Temperature :

+175 °C

Pbfree Code :

yes

Power Dissipation :

830W

Vgs (Max) :

±20V

Mount :

Chassis Mount, Screw

Terminal Finish :

Nickel

Number of Elements per Chip :

1

Drain to Source Resistance :

2.6 mΩ

Base Product Number :

IXFN360

Channel Type :

N

Max Power Dissipation :

830 W

Input Capacitance (Ciss) (Max) @ Vds :

36000pF @ 25V

Case Connection :

Isolated

Type :

Power MOSFET

Lead Free :

Lead Free

Mounting Type :

Chassis Mount

Transistor Application :

SWITCHING

Max Operating Temperature :

175 °C

Rds On Max :

2.6 mΩ

Length :

38.23mm

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V