IXFN34N80

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

8 Weeks

Max Operating Temperature :

150 °C

Pulsed Drain Current-Max (IDM) :

136A

Product Category :

Discrete Semiconductor Modules

Tradename :

HyperFET

Power Dissipation :

600W

Maximum Operating Temperature :

+ 150 C

Input Capacitance (Ciss) (Max) @ Vds :

7500pF @ 25V

Gate to Source Voltage (Vgs) :

20V

Mount :

Chassis Mount

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Product Type :

Discrete Semiconductor Modules

Power Dissipation-Max :

600W Tc

Number of Channels :

1 Channel

Max Power Dissipation :

600 W

Drain to Source Voltage (Vdss) :

800V

Gate Charge (Qg) (Max) @ Vgs :

270nC @ 10V

Qualification Status :

Not Qualified

Product Status :

Not For New Designs

Packaging :

Tube

FET Feature :

--

Drain to Source Resistance :

240 mΩ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance :

7.5 nF

Length :

38.2 mm

Width :

25.07 mm

Min Operating Temperature :

-55 °C

DS Breakdown Voltage-Min :

800 V

Terminal Form :

UNSPECIFIED

Case Connection :

Isolated

RoHS :

Details

Number of Terminations :

4

Power Dissipation (Max) :

600W (Tc)

Vgs(th) (Max) @ Id :

5V @ 8mA

Turn-Off Delay Time :

100 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Surface Mount :

No

Current - Continuous Drain (Id) @ 25°C :

34A Tc

Polarity/Channel Type :

N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Base Product Number :

IXFN34

Fall Time (Typ) :

40 ns

Power Dissipation-Max (Abs) :

600 W

Manufacturer :

IXYS

Brand :

IXYS

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

800V

JESD-30 Code :

R-XUFM-X4

Published :

2000

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

3000 mJ

Transistor Element Material :

SILICON

Mounting Type :

Chassis Mount

Package Shape :

RECTANGULAR

Drain-source On Resistance-Max :

0.24 Ω

Series :

HiPerFET™

Package / Case :

SOT-227-4, miniBLOC

Terminal Position :

UPPER

Number of Terminals :

4

Drain Current-Max (Abs) (ID) :

34 A

Pbfree Code :

yes

Terminal Finish :

Nickel (Ni)

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Style :

Chassis Mount

Pin Count :

4

Number of Pins :

4

Package :

Tube

Continuous Drain Current (ID) :

34A

Rds On Max :

240 mΩ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

9.6 mm

Rds On (Max) @ Id, Vgs :

240m Ω @ 500mA, 10V

Product :

Power MOSFET Modules

RoHS Status :

RoHS Compliant

Minimum Operating Temperature :

- 55 C

Transistor Polarity :

N-Channel

Rise Time :

45ns

FET Type :

N-Channel

Supplier Device Package :

SOT-227B

Reach Compliance Code :

Compliant