IXFN34N80

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Mfr.Part #
IXFN34N80
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 800V 34A SOT-227B
Stock
29,004
In Stock :
29,004

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Finish :
Nickel (Ni)
Drain-source On Resistance-Max :
0.24 Ω
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Qualification Status :
Not Qualified
Vgs(th) (Max) @ Id :
5V @ 8mA
Maximum Operating Temperature :
+ 150 C
Length :
38.2 mm
Rise Time :
45ns
Package :
Tube
Power Dissipation :
600W
Pulsed Drain Current-Max (IDM) :
136A
Base Product Number :
IXFN34
Gate to Source Voltage (Vgs) :
20V
Rds On Max :
240 mΩ
Configuration :
SINGLE WITH BUILT-IN DIODE
Package Shape :
RECTANGULAR
Brand :
IXYS
Transistor Application :
SWITCHING
Pin Count :
4
Factory Lead Time :
8 Weeks
Drain to Source Voltage (Vdss) :
800V
Surface Mount :
No
Series :
HiPerFET™
Package / Case :
SOT-227-4, miniBLOC
Rds On (Max) @ Id, Vgs :
240m Ω @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds :
7500pF @ 25V
Drain to Source Resistance :
240 mΩ
Number of Elements :
1
Number of Pins :
4
Tradename :
HyperFET
Max Operating Temperature :
150 °C
Vgs (Max) :
±20V
Avalanche Energy Rating (Eas) :
3000 mJ
Product Status :
Not For New Designs
Height :
9.6 mm
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Max Power Dissipation :
600 W
Transistor Element Material :
SILICON
Fall Time (Typ) :
40 ns
Polarity/Channel Type :
N-Channel
Input Capacitance :
7.5 nF
Operating Mode :
ENHANCEMENT MODE
Terminal Position :
UPPER
Power Dissipation-Max :
600W Tc
Gate Charge (Qg) (Max) @ Vgs :
270nC @ 10V
Turn-Off Delay Time :
100 ns
FET Feature :
--
Power Dissipation-Max (Abs) :
600 W
RoHS Status :
RoHS Compliant
Product :
Power MOSFET Modules
Pbfree Code :
yes
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
Number of Terminations :
4
Reach Compliance Code :
Compliant
Drain Current-Max (Abs) (ID) :
34 A
FET Type :
N-Channel
RoHS :
Details
Terminal Form :
UNSPECIFIED
Transistor Polarity :
N-Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Width :
25.07 mm
DS Breakdown Voltage-Min :
800 V
Mount :
Chassis Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Product Category :
Discrete Semiconductor Modules
Packaging :
Tube
Current - Continuous Drain (Id) @ 25°C :
34A Tc
Power Dissipation (Max) :
600W (Tc)
JESD-30 Code :
R-XUFM-X4
Mounting Type :
Chassis Mount
Drain to Source Breakdown Voltage :
800V
Manufacturer :
IXYS
Min Operating Temperature :
-55 °C
Operating Temperature :
-55°C~150°C TJ
Published :
2000
Case Connection :
Isolated
Product Type :
Discrete Semiconductor Modules
Minimum Operating Temperature :
- 55 C
Mounting Style :
Chassis Mount
Number of Terminals :
4
Drive Voltage (Max Rds On,Min Rds On) :
10V
Continuous Drain Current (ID) :
34A
Supplier Device Package :
SOT-227B
Number of Channels :
1 Channel
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFN34N80 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SOT-227-4, miniBLOC, Number of Pins:4, Number of Terminations:4, Mounting Type:Chassis Mount, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, IXFN34N80 pinout, IXFN34N80 datasheet PDF, IXFN34N80 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFN34N80 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFN34N80


N-Channel Tube 240m Ω @ 500mA, 10V ±20V 7500pF @ 25V 270nC @ 10V 800V SOT-227-4, miniBLOC

IXFN34N80 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 7500pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 800V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 800V.There is no drain current on this device since the maximum continuous current it can conduct is 34 A.As a result of its turn-off delay time, which is 100 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 136A, its maximum pulsed drain current.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 240 mΩ.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 800 V, it should remain above the 800 V level.The transistor must receive a 800V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFN34N80 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 34A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 136A.
single MOSFETs transistor is 240 mΩ
a 800V drain to source voltage (Vdss)


IXFN34N80 Applications


There are a lot of IXYS
IXFN34N80 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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