IXFN34N80
- Mfr.Part #
- IXFN34N80
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 34A SOT-227B
- Stock
- 29,004
- In Stock :
- 29,004
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 8 Weeks
- Length :
- 38.2 mm
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 7500pF @ 25V
- Product Type :
- Discrete Semiconductor Modules
- Number of Terminals :
- 4
- DS Breakdown Voltage-Min :
- 800 V
- JESD-30 Code :
- R-XUFM-X4
- Product Category :
- Discrete Semiconductor Modules
- Pbfree Code :
- yes
- Product :
- Power MOSFET Modules
- Drain Current-Max (Abs) (ID) :
- 34 A
- Mount :
- Chassis Mount
- Terminal Form :
- UNSPECIFIED
- Number of Elements :
- 1
- Supplier Device Package :
- SOT-227B
- Polarity/Channel Type :
- N-Channel
- RoHS Status :
- RoHS Compliant
- Maximum Operating Temperature :
- + 150 C
- Gate Charge (Qg) (Max) @ Vgs :
- 270nC @ 10V
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- RoHS :
- Details
- Turn-Off Delay Time :
- 100 ns
- Width :
- 25.07 mm
- Mounting Type :
- Chassis Mount
- Power Dissipation (Max) :
- 600W (Tc)
- Input Capacitance :
- 7.5 nF
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Max Power Dissipation :
- 600 W
- Packaging :
- Tube
- Power Dissipation-Max (Abs) :
- 600 W
- Drain to Source Resistance :
- 240 mΩ
- Package Shape :
- RECTANGULAR
- Manufacturer :
- IXYS
- Vgs (Max) :
- ±20V
- Reach Compliance Code :
- Compliant
- Max Operating Temperature :
- 150 °C
- Published :
- 2000
- FET Type :
- N-Channel
- Min Operating Temperature :
- -55 °C
- Pin Count :
- 4
- Transistor Polarity :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 40 ns
- Surface Mount :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 34A Tc
- Continuous Drain Current (ID) :
- 34A
- Terminal Position :
- UPPER
- Pulsed Drain Current-Max (IDM) :
- 136A
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Product Status :
- Not For New Designs
- Drain to Source Voltage (Vdss) :
- 800V
- Power Dissipation-Max :
- 600W Tc
- Package :
- Tube
- Case Connection :
- Isolated
- Power Dissipation :
- 600W
- Package / Case :
- SOT-227-4, miniBLOC
- Rds On Max :
- 240 mΩ
- Number of Pins :
- 4
- Height :
- 9.6 mm
- Number of Channels :
- 1 Channel
- Rise Time :
- 45ns
- Terminal Finish :
- Nickel (Ni)
- Tradename :
- HyperFET
- Rds On (Max) @ Id, Vgs :
- 240m Ω @ 500mA, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Series :
- HiPerFET™
- Drain-source On Resistance-Max :
- 0.24 Ω
- Brand :
- IXYS
- Minimum Operating Temperature :
- - 55 C
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Base Product Number :
- IXFN34
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Feature :
- --
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mounting Style :
- Chassis Mount
- Drain to Source Breakdown Voltage :
- 800V
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 4
- Datasheets
- IXFN34N80

N-Channel Tube 240m Ω @ 500mA, 10V ±20V 7500pF @ 25V 270nC @ 10V 800V SOT-227-4, miniBLOC
IXFN34N80 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 7500pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 800V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 800V.There is no drain current on this device since the maximum continuous current it can conduct is 34 A.As a result of its turn-off delay time, which is 100 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 136A, its maximum pulsed drain current.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 240 mΩ.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 800 V, it should remain above the 800 V level.The transistor must receive a 800V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFN34N80 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 34A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 136A.
single MOSFETs transistor is 240 mΩ
a 800V drain to source voltage (Vdss)
IXFN34N80 Applications
There are a lot of IXYS
IXFN34N80 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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