IXFN34N80

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

136A

Transistor Polarity :

N-Channel

Series :

HiPerFET™

Rds On Max :

240 mΩ

Gate Charge (Qg) (Max) @ Vgs :

270nC @ 10V

Vgs (Max) :

±20V

Max Operating Temperature :

150 °C

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Fall Time (Typ) :

40 ns

Published :

2000

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Chassis Mount

Minimum Operating Temperature :

- 55 C

Max Power Dissipation :

600 W

Height :

9.6 mm

Turn-Off Delay Time :

100 ns

Manufacturer :

IXYS

Reach Compliance Code :

Compliant

Number of Terminals :

4

Drain Current-Max (Abs) (ID) :

34 A

Drain to Source Breakdown Voltage :

800V

Qualification Status :

Not Qualified

Terminal Form :

UNSPECIFIED

Polarity/Channel Type :

N-Channel

FET Type :

N-Channel

Continuous Drain Current (ID) :

34A

Number of Terminations :

4

RoHS Status :

RoHS Compliant

Surface Mount :

No

Number of Channels :

1 Channel

Product Type :

Discrete Semiconductor Modules

Pin Count :

4

Operating Temperature :

-55°C~150°C TJ

Base Product Number :

IXFN34

Power Dissipation :

600W

Rds On (Max) @ Id, Vgs :

240m Ω @ 500mA, 10V

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

JESD-30 Code :

R-XUFM-X4

Vgs(th) (Max) @ Id :

5V @ 8mA

Avalanche Energy Rating (Eas) :

3000 mJ

Package / Case :

SOT-227-4, miniBLOC

Number of Pins :

4

Drain to Source Voltage (Vdss) :

800V

Case Connection :

Isolated

Gate to Source Voltage (Vgs) :

20V

Mounting Style :

Chassis Mount

Min Operating Temperature :

-55 °C

Current - Continuous Drain (Id) @ 25°C :

34A Tc

Terminal Position :

UPPER

Input Capacitance :

7.5 nF

Pbfree Code :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube

Supplier Device Package :

SOT-227B

Terminal Finish :

Nickel (Ni)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

800 V

Package :

Tube

Power Dissipation (Max) :

600W (Tc)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Product Category :

Discrete Semiconductor Modules

Rise Time :

45ns

Length :

38.2 mm

Brand :

IXYS

Mount :

Chassis Mount

Product :

Power MOSFET Modules

RoHS :

Details

Drain to Source Resistance :

240 mΩ

Drain-source On Resistance-Max :

0.24 Ω

Power Dissipation-Max (Abs) :

600 W

Maximum Operating Temperature :

+ 150 C

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

7500pF @ 25V

Tradename :

HyperFET

Factory Lead Time :

8 Weeks

FET Feature :

--

Power Dissipation-Max :

600W Tc

Width :

25.07 mm

Product Status :

Not For New Designs

Package Shape :

RECTANGULAR