IXFN34N100

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

280m Ω @ 500mA, 10V

Mounting Type :

Chassis Mount

Reach Compliance Code :

Compliant

Length :

38.2 mm

Package / Case :

SOT-227-4, miniBLOC

FET Type :

N-Channel

Power Dissipation (Max) :

700W (Tc)

Package Shape :

RECTANGULAR

JESD-30 Code :

R-PUFM-X4

Mounting Style :

Chassis Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

RoHS :

Compliant

Polarity/Channel Type :

N-Channel

Input Capacitance :

9.2 nF

Product Type :

Discrete Semiconductor Modules

Subcategory :

Discrete Semiconductor Modules

Operating Temperature :

-55°C~150°C TJ

Manufacturer :

IXYS

Series :

HiPerFET™

Published :

2003

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

380nC @ 10V

Number of Channels :

1 Channel

Max Operating Temperature :

150 °C

Height :

9.6 mm

Vgs (Max) :

±20V

Max Power Dissipation :

700 W

Surface Mount :

No

FET Feature :

--

Pulsed Drain Current-Max (IDM) :

136A

Terminal Form :

UNSPECIFIED

Min Operating Temperature :

-55 °C

Packaging :

Tube

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

4

Transistor Polarity :

N-Channel

Pbfree Code :

yes

Additional Feature :

AVALANCHE RATED

Number of Terminations :

4

Mount :

Chassis Mount

Vgs(th) (Max) @ Id :

5.5V @ 8mA

Power Dissipation :

700W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

1000V

Continuous Drain Current (ID) :

34A

Maximum Operating Temperature :

+ 150 C

Terminal Finish :

Nickel (Ni)

Drain to Source Breakdown Voltage :

1kV

Current - Continuous Drain (Id) @ 25°C :

34A Tc

Power Dissipation-Max :

700W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

4000 mJ

Qualification Status :

Not Qualified

Pin Count :

4

DS Breakdown Voltage-Min :

1000 V

Product Category :

Discrete Semiconductor Modules

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Fall Time (Typ) :

30 ns

Terminal Position :

UPPER

Brand :

IXYS

Minimum Operating Temperature :

- 55 C

Input Capacitance (Ciss) (Max) @ Vds :

9200pF @ 25V

Drain to Source Resistance :

280 mΩ

Case Connection :

DRAIN

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Supplier Device Package :

SOT-227B

Rds On Max :

280 mΩ

Number of Terminals :

4

Rise Time :

65ns

RoHS Status :

RoHS Compliant

Width :

25.07 mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Tradename :

HyperFET

Product :

Power MOSFET Modules

Drain-source On Resistance-Max :

0.28Ohm

Turn-Off Delay Time :

110 ns

Number of Elements :

1