IXFN34N100

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Mfr.Part #
IXFN34N100
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 1000V 34A SOT-227B
Stock
21,963
In Stock :
21,963

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation :
700W
Length :
38.2 mm
Qualification Status :
Not Qualified
Manufacturer :
IXYS
Product :
Power MOSFET Modules
Rds On Max :
280 mΩ
Series :
HiPerFET™
Number of Terminals :
4
Brand :
IXYS
Terminal Finish :
Nickel (Ni)
Drain to Source Breakdown Voltage :
1kV
Tradename :
HyperFET
Width :
25.07 mm
Height :
9.6 mm
FET Feature :
--
Input Capacitance (Ciss) (Max) @ Vds :
9200pF @ 25V
Minimum Operating Temperature :
- 55 C
Turn-Off Delay Time :
110 ns
Transistor Element Material :
SILICON
Continuous Drain Current (ID) :
34A
Transistor Application :
SWITCHING
Pulsed Drain Current-Max (IDM) :
136A
Operating Mode :
ENHANCEMENT MODE
JESD-30 Code :
R-PUFM-X4
Rds On (Max) @ Id, Vgs :
280m Ω @ 500mA, 10V
Supplier Device Package :
SOT-227B
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Surface Mount :
No
Gate to Source Voltage (Vgs) :
20V
Vgs (Max) :
±20V
Published :
2003
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Operating Temperature :
-55°C~150°C TJ
Max Operating Temperature :
150 °C
Gate Charge (Qg) (Max) @ Vgs :
380nC @ 10V
Mounting Style :
Chassis Mount
Pbfree Code :
yes
Polarity/Channel Type :
N-Channel
Package / Case :
SOT-227-4, miniBLOC
RoHS Status :
RoHS Compliant
Terminal Form :
UNSPECIFIED
Drain to Source Voltage (Vdss) :
1000V
Configuration :
SINGLE WITH BUILT-IN DIODE
Vgs(th) (Max) @ Id :
5.5V @ 8mA
Number of Pins :
4
Rise Time :
65ns
Maximum Operating Temperature :
+ 150 C
FET Type :
N-Channel
Transistor Polarity :
N-Channel
Input Capacitance :
9.2 nF
Pin Count :
4
Package Shape :
RECTANGULAR
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
DS Breakdown Voltage-Min :
1000 V
Power Dissipation-Max :
700W Tc
Subcategory :
Discrete Semiconductor Modules
Max Power Dissipation :
700 W
Number of Terminations :
4
Number of Elements :
1
Drain-source On Resistance-Max :
0.28Ohm
Additional Feature :
AVALANCHE RATED
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
RoHS :
Compliant
Min Operating Temperature :
-55 °C
Power Dissipation (Max) :
700W (Tc)
Case Connection :
DRAIN
Packaging :
Tube
Product Category :
Discrete Semiconductor Modules
Drive Voltage (Max Rds On,Min Rds On) :
10V
Avalanche Energy Rating (Eas) :
4000 mJ
Drain to Source Resistance :
280 mΩ
Terminal Position :
UPPER
Mount :
Chassis Mount
Current - Continuous Drain (Id) @ 25°C :
34A Tc
Product Type :
Discrete Semiconductor Modules
Number of Channels :
1 Channel
Reach Compliance Code :
Compliant
Fall Time (Typ) :
30 ns
Mounting Type :
Chassis Mount
Datasheets
IXFN34N100
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFN34N100 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:SOT-227-4, miniBLOC, Number of Pins:4, Number of Terminations:4, Number of Channels:1 Channel, Mounting Type:Chassis Mount, IXFN34N100 pinout, IXFN34N100 datasheet PDF, IXFN34N100 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFN34N100 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFN34N100


N-Channel Tube 280m Ω @ 500mA, 10V ±20V 9200pF @ 25V 380nC @ 10V 1000V SOT-227-4, miniBLOC

IXFN34N100 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 4000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 9200pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 34A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=1kV. And this device has 1kV drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 110 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 136A. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 280 mΩ. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 1000 V in order to maintain normal operation.Operating this transistor requires a 1000V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFN34N100 Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 34A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 136A.
single MOSFETs transistor is 280 mΩ
a 1000V drain to source voltage (Vdss)


IXFN34N100 Applications


There are a lot of IXYS
IXFN34N100 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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