IXFN340N07
- Mfr.Part #
- IXFN340N07
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 70V 340A SOT-227B
- Stock
- 43,023
- In Stock :
- 43,023
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Maximum Operating Temperature :
- + 150 C
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation (Max) :
- 700W (Tc)
- Vgs (Max) :
- ±20V
- Radiation Hardening :
- No
- Packaging :
- Tube
- Number of Terminals :
- 4
- Rds On (Max) @ Id, Vgs :
- 4m Ω @ 100A, 10V
- Surface Mount :
- No
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 700W Tc
- Number of Elements :
- 1
- Power Dissipation-Max (Abs) :
- 700 W
- Polarity/Channel Type :
- N-Channel
- Package / Case :
- SOT-227-4, miniBLOC
- Fall Time (Typ) :
- 33 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 12200pF @ 25V
- Package Shape :
- RECTANGULAR
- Drain to Source Voltage (Vdss) :
- 70V
- Mount :
- Chassis Mount, Screw
- Drain Current-Max (Abs) (ID) :
- 340 A
- Product Category :
- Discrete Semiconductor Modules
- Additional Feature :
- AVALANCHE RATED
- Number of Terminations :
- 4
- Turn-Off Delay Time :
- 200 ns
- Qualification Status :
- Not Qualified
- Mounting Type :
- Chassis Mount
- Power Dissipation :
- 700W
- Base Product Number :
- IXFN340
- Current - Continuous Drain (Id) @ 25°C :
- 340A Tc
- Rise Time :
- 95ns
- Continuous Drain Current (ID) :
- 340A
- Terminal Position :
- UPPER
- Product Status :
- Obsolete
- Length :
- 38.23 mm
- Avalanche Energy Rating (Eas) :
- 4000 mJ
- Number of Pins :
- 4
- Type :
- HiPerFET
- Lead Free :
- Lead Free
- Pulsed Drain Current-Max (IDM) :
- 1360 A
- Product Type :
- Discrete Semiconductor Modules
- Width :
- 25.42 mm
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 0.004 Ω
- Gate to Source Voltage (Vgs) :
- 20V
- Case Connection :
- Isolated
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mounting Style :
- Screw Mounts
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Package :
- Tube
- FET Type :
- N-Channel
- Resistance :
- 4mOhm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Published :
- 2005
- RoHS Status :
- RoHS Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 490nC @ 10V
- Manufacturer :
- IXYS
- Tradename :
- HiPerFET
- Terminal Finish :
- Nickel (Ni)
- Product :
- Power MOSFET Modules
- Vgs(th) (Max) @ Id :
- 4V @ 8mA
- Number of Channels :
- 1 Channel
- Transistor Element Material :
- SILICON
- RoHS :
- Details
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DS Breakdown Voltage-Min :
- 70 V
- Supplier Device Package :
- SOT-227B
- Minimum Operating Temperature :
- - 55 C
- Brand :
- IXYS
- Factory Lead Time :
- 4 Weeks
- Height :
- 12.22 mm
- FET Feature :
- --
- Terminal Form :
- UNSPECIFIED
- Drain to Source Breakdown Voltage :
- 70V
- Series :
- HiPerFET™
- Reach Compliance Code :
- Compliant
- Transistor Polarity :
- N-Channel
- Pbfree Code :
- yes
- JESD-30 Code :
- R-PUFM-X4
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pin Count :
- 4
- Datasheets
- IXFN340N07

N-Channel Tube 4m Ω @ 100A, 10V ±20V 12200pF @ 25V 490nC @ 10V 70V SOT-227-4, miniBLOC
IXFN340N07 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 4000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 12200pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 340A amps.In this device, the drain-source breakdown voltage is 70V and VGS=70V, so the drain-source breakdown voltage is 70V in this case.A device can conduct a maximum continuous current of [340 A] according to its drain current.It is [200 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 1360 A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 70 V to maintain normal operation.To operate this transistor, you will need a 70V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXFN340N07 Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 340A
a drain-to-source breakdown voltage of 70V voltage
the turn-off delay time is 200 ns
based on its rated peak drain current 1360 A.
a 70V drain to source voltage (Vdss)
IXFN340N07 Applications
There are a lot of IXYS
IXFN340N07 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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