IXFN340N07
- Mfr.Part #
- IXFN340N07
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 70V 340A SOT-227B
- Stock
- 43,023
- In Stock :
- 43,023
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Qualification Status :
- Not Qualified
- Pulsed Drain Current-Max (IDM) :
- 1360 A
- Number of Terminals :
- 4
- Drain-source On Resistance-Max :
- 0.004 Ω
- Reach Compliance Code :
- Compliant
- Terminal Finish :
- Nickel (Ni)
- Pin Count :
- 4
- Fall Time (Typ) :
- 33 ns
- Manufacturer :
- IXYS
- Product :
- Power MOSFET Modules
- Drain to Source Breakdown Voltage :
- 70V
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Product Category :
- Discrete Semiconductor Modules
- Rds On (Max) @ Id, Vgs :
- 4m Ω @ 100A, 10V
- Published :
- 2005
- Surface Mount :
- No
- Type :
- HiPerFET
- Vgs(th) (Max) @ Id :
- 4V @ 8mA
- Radiation Hardening :
- No
- Length :
- 38.23 mm
- Height :
- 12.22 mm
- Drain to Source Voltage (Vdss) :
- 70V
- Number of Terminations :
- 4
- Mounting Type :
- Chassis Mount
- RoHS Status :
- RoHS Compliant
- Mount :
- Chassis Mount, Screw
- Mounting Style :
- Screw Mounts
- Width :
- 25.42 mm
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Channels :
- 1 Channel
- Additional Feature :
- AVALANCHE RATED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Position :
- UPPER
- Input Capacitance (Ciss) (Max) @ Vds :
- 12200pF @ 25V
- Polarity/Channel Type :
- N-Channel
- Transistor Polarity :
- N-Channel
- Resistance :
- 4mOhm
- Number of Pins :
- 4
- RoHS :
- Details
- Product Type :
- Discrete Semiconductor Modules
- Series :
- HiPerFET™
- Package :
- Tube
- Packaging :
- Tube
- Package Shape :
- RECTANGULAR
- Power Dissipation-Max (Abs) :
- 700 W
- Gate to Source Voltage (Vgs) :
- 20V
- DS Breakdown Voltage-Min :
- 70 V
- Current - Continuous Drain (Id) @ 25°C :
- 340A Tc
- Brand :
- IXYS
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 200 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Base Product Number :
- IXFN340
- Pbfree Code :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Case Connection :
- Isolated
- Factory Lead Time :
- 4 Weeks
- Rise Time :
- 95ns
- Power Dissipation (Max) :
- 700W (Tc)
- Power Dissipation :
- 700W
- Drain Current-Max (Abs) (ID) :
- 340 A
- JESD-30 Code :
- R-PUFM-X4
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 340A
- Minimum Operating Temperature :
- - 55 C
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Supplier Device Package :
- SOT-227B
- Terminal Form :
- UNSPECIFIED
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Avalanche Energy Rating (Eas) :
- 4000 mJ
- Tradename :
- HiPerFET
- Product Status :
- Obsolete
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- SOT-227-4, miniBLOC
- Power Dissipation-Max :
- 700W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 490nC @ 10V
- Maximum Operating Temperature :
- + 150 C
- Transistor Application :
- SWITCHING
- FET Feature :
- --
- Datasheets
- IXFN340N07

N-Channel Tube 4m Ω @ 100A, 10V ±20V 12200pF @ 25V 490nC @ 10V 70V SOT-227-4, miniBLOC
IXFN340N07 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 4000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 12200pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 340A amps.In this device, the drain-source breakdown voltage is 70V and VGS=70V, so the drain-source breakdown voltage is 70V in this case.A device can conduct a maximum continuous current of [340 A] according to its drain current.It is [200 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 1360 A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 70 V to maintain normal operation.To operate this transistor, you will need a 70V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXFN340N07 Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 340A
a drain-to-source breakdown voltage of 70V voltage
the turn-off delay time is 200 ns
based on its rated peak drain current 1360 A.
a 70V drain to source voltage (Vdss)
IXFN340N07 Applications
There are a lot of IXYS
IXFN340N07 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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