IXFN340N07

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Mfr.Part #
IXFN340N07
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 70V 340A SOT-227B
Stock
43,023
In Stock :
43,023

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Maximum Operating Temperature :
+ 150 C
Operating Temperature :
-55°C~150°C TJ
Power Dissipation (Max) :
700W (Tc)
Vgs (Max) :
±20V
Radiation Hardening :
No
Packaging :
Tube
Number of Terminals :
4
Rds On (Max) @ Id, Vgs :
4m Ω @ 100A, 10V
Surface Mount :
No
Operating Mode :
ENHANCEMENT MODE
Power Dissipation-Max :
700W Tc
Number of Elements :
1
Power Dissipation-Max (Abs) :
700 W
Polarity/Channel Type :
N-Channel
Package / Case :
SOT-227-4, miniBLOC
Fall Time (Typ) :
33 ns
Input Capacitance (Ciss) (Max) @ Vds :
12200pF @ 25V
Package Shape :
RECTANGULAR
Drain to Source Voltage (Vdss) :
70V
Mount :
Chassis Mount, Screw
Drain Current-Max (Abs) (ID) :
340 A
Product Category :
Discrete Semiconductor Modules
Additional Feature :
AVALANCHE RATED
Number of Terminations :
4
Turn-Off Delay Time :
200 ns
Qualification Status :
Not Qualified
Mounting Type :
Chassis Mount
Power Dissipation :
700W
Base Product Number :
IXFN340
Current - Continuous Drain (Id) @ 25°C :
340A Tc
Rise Time :
95ns
Continuous Drain Current (ID) :
340A
Terminal Position :
UPPER
Product Status :
Obsolete
Length :
38.23 mm
Avalanche Energy Rating (Eas) :
4000 mJ
Number of Pins :
4
Type :
HiPerFET
Lead Free :
Lead Free
Pulsed Drain Current-Max (IDM) :
1360 A
Product Type :
Discrete Semiconductor Modules
Width :
25.42 mm
Transistor Application :
SWITCHING
Drain-source On Resistance-Max :
0.004 Ω
Gate to Source Voltage (Vgs) :
20V
Case Connection :
Isolated
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mounting Style :
Screw Mounts
Configuration :
SINGLE WITH BUILT-IN DIODE
Package :
Tube
FET Type :
N-Channel
Resistance :
4mOhm
Drive Voltage (Max Rds On,Min Rds On) :
10V
Published :
2005
RoHS Status :
RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs :
490nC @ 10V
Manufacturer :
IXYS
Tradename :
HiPerFET
Terminal Finish :
Nickel (Ni)
Product :
Power MOSFET Modules
Vgs(th) (Max) @ Id :
4V @ 8mA
Number of Channels :
1 Channel
Transistor Element Material :
SILICON
RoHS :
Details
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
DS Breakdown Voltage-Min :
70 V
Supplier Device Package :
SOT-227B
Minimum Operating Temperature :
- 55 C
Brand :
IXYS
Factory Lead Time :
4 Weeks
Height :
12.22 mm
FET Feature :
--
Terminal Form :
UNSPECIFIED
Drain to Source Breakdown Voltage :
70V
Series :
HiPerFET™
Reach Compliance Code :
Compliant
Transistor Polarity :
N-Channel
Pbfree Code :
yes
JESD-30 Code :
R-PUFM-X4
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pin Count :
4
Datasheets
IXFN340N07
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFN340N07 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:SOT-227-4, miniBLOC, Number of Terminations:4, Mounting Type:Chassis Mount, Number of Pins:4, Type:HiPerFET, Number of Channels:1 Channel, IXFN340N07 pinout, IXFN340N07 datasheet PDF, IXFN340N07 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFN340N07 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFN340N07


N-Channel Tube 4m Ω @ 100A, 10V ±20V 12200pF @ 25V 490nC @ 10V 70V SOT-227-4, miniBLOC

IXFN340N07 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 4000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 12200pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 340A amps.In this device, the drain-source breakdown voltage is 70V and VGS=70V, so the drain-source breakdown voltage is 70V in this case.A device can conduct a maximum continuous current of [340 A] according to its drain current.It is [200 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 1360 A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 70 V to maintain normal operation.To operate this transistor, you will need a 70V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXFN340N07 Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 340A
a drain-to-source breakdown voltage of 70V voltage
the turn-off delay time is 200 ns
based on its rated peak drain current 1360 A.
a 70V drain to source voltage (Vdss)


IXFN340N07 Applications


There are a lot of IXYS
IXFN340N07 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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