IXFN340N07

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

UPPER

Radiation Hardening :

No

FET Feature :

--

Drain to Source Voltage (Vdss) :

70V

Factory Lead Time :

4 Weeks

DS Breakdown Voltage-Min :

70 V

Number of Terminations :

4

Packaging :

Tube

Lead Free :

Lead Free

Base Product Number :

IXFN340

Pulsed Drain Current-Max (IDM) :

1360 A

Drain-source On Resistance-Max :

0.004 Ω

Height :

12.22 mm

Length :

38.23 mm

Transistor Polarity :

N-Channel

Qualification Status :

Not Qualified

RoHS Status :

RoHS Compliant

Drain to Source Breakdown Voltage :

70V

Power Dissipation :

700W

Operating Mode :

ENHANCEMENT MODE

Package / Case :

SOT-227-4, miniBLOC

Transistor Element Material :

SILICON

Fall Time (Typ) :

33 ns

Terminal Form :

UNSPECIFIED

Mounting Style :

Screw Mounts

Current - Continuous Drain (Id) @ 25°C :

340A Tc

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Finish :

Nickel (Ni)

Vgs (Max) :

±20V

Brand :

IXYS

Operating Temperature :

-55°C~150°C TJ

Package :

Tube

Width :

25.42 mm

Additional Feature :

AVALANCHE RATED

Manufacturer :

IXYS

Tradename :

HiPerFET

Power Dissipation-Max :

700W Tc

Number of Pins :

4

Supplier Device Package :

SOT-227B

Mount :

Chassis Mount, Screw

Product Type :

Discrete Semiconductor Modules

RoHS :

Details

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

12200pF @ 25V

Polarity/Channel Type :

N-Channel

Number of Terminals :

4

Drive Voltage (Max Rds On,Min Rds On) :

10V

Product :

Power MOSFET Modules

Turn-Off Delay Time :

200 ns

Surface Mount :

No

Published :

2005

Package Shape :

RECTANGULAR

Transistor Application :

SWITCHING

Rise Time :

95ns

Mounting Type :

Chassis Mount

Continuous Drain Current (ID) :

340A

FET Type :

N-Channel

Resistance :

4mOhm

Drain Current-Max (Abs) (ID) :

340 A

Pbfree Code :

yes

Pin Count :

4

Rds On (Max) @ Id, Vgs :

4m Ω @ 100A, 10V

Minimum Operating Temperature :

- 55 C

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

1 Channel

Vgs(th) (Max) @ Id :

4V @ 8mA

Number of Elements :

1

Power Dissipation (Max) :

700W (Tc)

Product Category :

Discrete Semiconductor Modules

Power Dissipation-Max (Abs) :

700 W

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

4000 mJ

Type :

HiPerFET

Gate Charge (Qg) (Max) @ Vgs :

490nC @ 10V

Case Connection :

Isolated

JESD-30 Code :

R-PUFM-X4

Series :

HiPerFET™

Maximum Operating Temperature :

+ 150 C

Product Status :

Obsolete

Reach Compliance Code :

Compliant