IXFN340N06
- Mfr.Part #
- IXFN340N06
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 340A SOT-227B
- Stock
- 8,193
- In Stock :
- 8,193
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Package :
- Tube
- Number of Channels :
- 1 Channel
- Power Dissipation-Max (Abs) :
- 700 W
- Terminal Finish :
- Nickel (Ni)
- Number of Pins :
- 4
- Package Shape :
- RECTANGULAR
- Drain Current-Max (Abs) (ID) :
- 340 A
- JESD-30 Code :
- R-PUFM-X4
- Maximum Operating Temperature :
- + 150 C
- Input Capacitance (Ciss) (Max) @ Vds :
- 16800pF @ 25V
- Vgs(th) (Max) @ Id :
- 4V @ 8mA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Published :
- 2000
- FET Type :
- N-Channel
- FET Feature :
- --
- Case Connection :
- Isolated
- ECCN Code :
- EAR99
- RoHS :
- Details
- Mounting Type :
- Chassis Mount
- Series :
- HiPerFET™
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Element Material :
- SILICON
- Terminal Position :
- UPPER
- Base Product Number :
- IXFN340
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Terminals :
- 4
- Package / Case :
- SOT-227-4, miniBLOC
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain to Source Breakdown Voltage :
- 60V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Pulsed Drain Current-Max (IDM) :
- 1360A
- Pin Count :
- 4
- RoHS Status :
- RoHS Compliant
- Width :
- 25.07 mm
- Additional Feature :
- AVALANCHE RATED
- Polarity/Channel Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 3m Ω @ 100A, 10V
- Avalanche Energy Rating (Eas) :
- 4000 mJ
- Continuous Drain Current (ID) :
- 340A
- Rise Time :
- 95ns
- Minimum Operating Temperature :
- - 55 C
- Power Dissipation (Max) :
- 700W (Tc)
- Drain-source On Resistance-Max :
- 0.003Ohm
- Product Status :
- Not For New Designs
- Drain to Source Voltage (Vdss) :
- 60V
- Packaging :
- Tube
- DS Breakdown Voltage-Min :
- 60 V
- Height :
- 9.6 mm
- Product Category :
- Discrete Semiconductor Modules
- Number of Terminations :
- 4
- Power Dissipation :
- 700W
- Power Dissipation-Max :
- 700W Tc
- Qualification Status :
- Not Qualified
- Transistor Application :
- SWITCHING
- Brand :
- IXYS
- Product :
- Power MOSFET Modules
- Tradename :
- HyperFET
- Reach Compliance Code :
- Compliant
- Surface Mount :
- No
- Supplier Device Package :
- SOT-227B
- Manufacturer :
- IXYS
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 600nC @ 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Turn-Off Delay Time :
- 200 ns
- Terminal Form :
- UNSPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 340A Tc
- Transistor Polarity :
- N-Channel
- Mount :
- Chassis Mount
- Fall Time (Typ) :
- 33 ns
- Length :
- 38.2 mm
- Mounting Style :
- Chassis Mount
- Product Type :
- Discrete Semiconductor Modules
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Datasheets
- IXFN340N06

N-Channel Tube 3m Ω @ 100A, 10V ±20V 16800pF @ 25V 600nC @ 10V 60V SOT-227-4, miniBLOC
IXFN340N06 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 4000 mJ.A device's maximal input capacitance is 16800pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 340A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 340 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 200 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 1360A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 60 V.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFN340N06 Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 340A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 200 ns
based on its rated peak drain current 1360A.
a 60V drain to source voltage (Vdss)
IXFN340N06 Applications
There are a lot of IXYS
IXFN340N06 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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