IXFN340N06
- Mfr.Part #
- IXFN340N06
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 340A SOT-227B
- Stock
- 8,193
- In Stock :
- 8,193
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product :
- Power MOSFET Modules
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Position :
- UPPER
- Mounting Type :
- Chassis Mount
- Vgs(th) (Max) @ Id :
- 4V @ 8mA
- Turn-Off Delay Time :
- 200 ns
- DS Breakdown Voltage-Min :
- 60 V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 16800pF @ 25V
- Drain to Source Voltage (Vdss) :
- 60V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Minimum Operating Temperature :
- - 55 C
- FET Type :
- N-Channel
- Qualification Status :
- Not Qualified
- Power Dissipation (Max) :
- 700W (Tc)
- FET Feature :
- --
- Manufacturer :
- IXYS
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Operating Mode :
- ENHANCEMENT MODE
- Base Product Number :
- IXFN340
- Transistor Element Material :
- SILICON
- Additional Feature :
- AVALANCHE RATED
- Tradename :
- HyperFET
- RoHS :
- Details
- Package Shape :
- RECTANGULAR
- RoHS Status :
- RoHS Compliant
- Width :
- 25.07 mm
- Drain Current-Max (Abs) (ID) :
- 340 A
- Operating Temperature :
- -55°C~150°C TJ
- Product Status :
- Not For New Designs
- Pbfree Code :
- yes
- Published :
- 2000
- Terminal Finish :
- Nickel (Ni)
- Transistor Application :
- SWITCHING
- Product Category :
- Discrete Semiconductor Modules
- Transistor Polarity :
- N-Channel
- Length :
- 38.2 mm
- Drain to Source Breakdown Voltage :
- 60V
- Continuous Drain Current (ID) :
- 340A
- Packaging :
- Tube
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 3m Ω @ 100A, 10V
- Terminal Form :
- UNSPECIFIED
- Package / Case :
- SOT-227-4, miniBLOC
- Number of Terminals :
- 4
- Avalanche Energy Rating (Eas) :
- 4000 mJ
- Pulsed Drain Current-Max (IDM) :
- 1360A
- Mounting Style :
- Chassis Mount
- Series :
- HiPerFET™
- JESD-30 Code :
- R-PUFM-X4
- Product Type :
- Discrete Semiconductor Modules
- Gate to Source Voltage (Vgs) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminations :
- 4
- Power Dissipation :
- 700W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Maximum Operating Temperature :
- + 150 C
- Package :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 600nC @ 10V
- Power Dissipation-Max (Abs) :
- 700 W
- Brand :
- IXYS
- Number of Pins :
- 4
- Height :
- 9.6 mm
- Reach Compliance Code :
- Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 340A Tc
- Number of Channels :
- 1 Channel
- Rise Time :
- 95ns
- Mount :
- Chassis Mount
- Fall Time (Typ) :
- 33 ns
- Case Connection :
- Isolated
- Supplier Device Package :
- SOT-227B
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 700W Tc
- Polarity/Channel Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.003Ohm
- Pin Count :
- 4
- Surface Mount :
- No
- Datasheets
- IXFN340N06

N-Channel Tube 3m Ω @ 100A, 10V ±20V 16800pF @ 25V 600nC @ 10V 60V SOT-227-4, miniBLOC
IXFN340N06 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 4000 mJ.A device's maximal input capacitance is 16800pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 340A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 340 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 200 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 1360A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 60 V.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFN340N06 Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 340A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 200 ns
based on its rated peak drain current 1360A.
a 60V drain to source voltage (Vdss)
IXFN340N06 Applications
There are a lot of IXYS
IXFN340N06 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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