IXFN340N06
- Mfr.Part #
- IXFN340N06
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 340A SOT-227B
- Stock
- 8,193
- In Stock :
- 8,193
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package :
- Tube
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 4
- Power Dissipation (Max) :
- 700W (Tc)
- FET Type :
- N-Channel
- Product Type :
- Discrete Semiconductor Modules
- Polarity/Channel Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain Current-Max (Abs) (ID) :
- 340 A
- Package / Case :
- SOT-227-4, miniBLOC
- Power Dissipation-Max :
- 700W Tc
- Base Product Number :
- IXFN340
- Vgs(th) (Max) @ Id :
- 4V @ 8mA
- Product Status :
- Not For New Designs
- Avalanche Energy Rating (Eas) :
- 4000 mJ
- Brand :
- IXYS
- Number of Pins :
- 4
- Current - Continuous Drain (Id) @ 25°C :
- 340A Tc
- Supplier Device Package :
- SOT-227B
- Series :
- HiPerFET™
- Number of Elements :
- 1
- RoHS :
- Details
- Additional Feature :
- AVALANCHE RATED
- Qualification Status :
- Not Qualified
- Rise Time :
- 95ns
- DS Breakdown Voltage-Min :
- 60 V
- Operating Temperature :
- -55°C~150°C TJ
- Height :
- 9.6 mm
- Turn-Off Delay Time :
- 200 ns
- Mount :
- Chassis Mount
- Pulsed Drain Current-Max (IDM) :
- 1360A
- Maximum Operating Temperature :
- + 150 C
- Power Dissipation-Max (Abs) :
- 700 W
- Tradename :
- HyperFET
- Rds On (Max) @ Id, Vgs :
- 3m Ω @ 100A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 16800pF @ 25V
- Transistor Polarity :
- N-Channel
- JESD-30 Code :
- R-PUFM-X4
- Length :
- 38.2 mm
- Mounting Style :
- Chassis Mount
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain-source On Resistance-Max :
- 0.003Ohm
- Width :
- 25.07 mm
- Terminal Form :
- UNSPECIFIED
- Drain to Source Breakdown Voltage :
- 60V
- Number of Channels :
- 1 Channel
- Published :
- 2000
- FET Feature :
- --
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 33 ns
- RoHS Status :
- RoHS Compliant
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Minimum Operating Temperature :
- - 55 C
- Reach Compliance Code :
- Compliant
- Package Shape :
- RECTANGULAR
- Power Dissipation :
- 700W
- Vgs (Max) :
- ±20V
- Terminal Position :
- UPPER
- Product :
- Power MOSFET Modules
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminals :
- 4
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 60V
- Continuous Drain Current (ID) :
- 340A
- Product Category :
- Discrete Semiconductor Modules
- Surface Mount :
- No
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- ECCN Code :
- EAR99
- Manufacturer :
- IXYS
- Pin Count :
- 4
- Gate to Source Voltage (Vgs) :
- 20V
- Case Connection :
- Isolated
- Mounting Type :
- Chassis Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 600nC @ 10V
- Terminal Finish :
- Nickel (Ni)
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Datasheets
- IXFN340N06

N-Channel Tube 3m Ω @ 100A, 10V ±20V 16800pF @ 25V 600nC @ 10V 60V SOT-227-4, miniBLOC
IXFN340N06 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 4000 mJ.A device's maximal input capacitance is 16800pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 340A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 340 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 200 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 1360A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 60 V.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFN340N06 Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 340A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 200 ns
based on its rated peak drain current 1360A.
a 60V drain to source voltage (Vdss)
IXFN340N06 Applications
There are a lot of IXYS
IXFN340N06 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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