IXFN340N06

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Mfr.Part #
IXFN340N06
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 60V 340A SOT-227B
Stock
8,193
In Stock :
8,193

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Package :
Tube
Transistor Application :
SWITCHING
Number of Terminations :
4
Power Dissipation (Max) :
700W (Tc)
FET Type :
N-Channel
Product Type :
Discrete Semiconductor Modules
Polarity/Channel Type :
N-Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain Current-Max (Abs) (ID) :
340 A
Package / Case :
SOT-227-4, miniBLOC
Power Dissipation-Max :
700W Tc
Base Product Number :
IXFN340
Vgs(th) (Max) @ Id :
4V @ 8mA
Product Status :
Not For New Designs
Avalanche Energy Rating (Eas) :
4000 mJ
Brand :
IXYS
Number of Pins :
4
Current - Continuous Drain (Id) @ 25°C :
340A Tc
Supplier Device Package :
SOT-227B
Series :
HiPerFET™
Number of Elements :
1
RoHS :
Details
Additional Feature :
AVALANCHE RATED
Qualification Status :
Not Qualified
Rise Time :
95ns
DS Breakdown Voltage-Min :
60 V
Operating Temperature :
-55°C~150°C TJ
Height :
9.6 mm
Turn-Off Delay Time :
200 ns
Mount :
Chassis Mount
Pulsed Drain Current-Max (IDM) :
1360A
Maximum Operating Temperature :
+ 150 C
Power Dissipation-Max (Abs) :
700 W
Tradename :
HyperFET
Rds On (Max) @ Id, Vgs :
3m Ω @ 100A, 10V
Input Capacitance (Ciss) (Max) @ Vds :
16800pF @ 25V
Transistor Polarity :
N-Channel
JESD-30 Code :
R-PUFM-X4
Length :
38.2 mm
Mounting Style :
Chassis Mount
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drain-source On Resistance-Max :
0.003Ohm
Width :
25.07 mm
Terminal Form :
UNSPECIFIED
Drain to Source Breakdown Voltage :
60V
Number of Channels :
1 Channel
Published :
2000
FET Feature :
--
Operating Mode :
ENHANCEMENT MODE
Fall Time (Typ) :
33 ns
RoHS Status :
RoHS Compliant
Packaging :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Minimum Operating Temperature :
- 55 C
Reach Compliance Code :
Compliant
Package Shape :
RECTANGULAR
Power Dissipation :
700W
Vgs (Max) :
±20V
Terminal Position :
UPPER
Product :
Power MOSFET Modules
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Terminals :
4
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain to Source Voltage (Vdss) :
60V
Continuous Drain Current (ID) :
340A
Product Category :
Discrete Semiconductor Modules
Surface Mount :
No
Configuration :
SINGLE WITH BUILT-IN DIODE
ECCN Code :
EAR99
Manufacturer :
IXYS
Pin Count :
4
Gate to Source Voltage (Vgs) :
20V
Case Connection :
Isolated
Mounting Type :
Chassis Mount
Gate Charge (Qg) (Max) @ Vgs :
600nC @ 10V
Terminal Finish :
Nickel (Ni)
Transistor Element Material :
SILICON
Pbfree Code :
yes
Datasheets
IXFN340N06
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFN340N06 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:4, Package / Case:SOT-227-4, miniBLOC, Number of Pins:4, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Mounting Type:Chassis Mount, IXFN340N06 pinout, IXFN340N06 datasheet PDF, IXFN340N06 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFN340N06 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFN340N06


N-Channel Tube 3m Ω @ 100A, 10V ±20V 16800pF @ 25V 600nC @ 10V 60V SOT-227-4, miniBLOC

IXFN340N06 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 4000 mJ.A device's maximal input capacitance is 16800pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 340A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 340 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 200 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 1360A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 60 V.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFN340N06 Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 340A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 200 ns
based on its rated peak drain current 1360A.
a 60V drain to source voltage (Vdss)


IXFN340N06 Applications


There are a lot of IXYS
IXFN340N06 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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