IXFN32N80P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Height :

9.6 mm

Manufacturer :

IXYS

Power Dissipation :

625W

Terminal Position :

UPPER

Transistor Application :

SWITCHING

Number of Terminations :

4

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Product Type :

Discrete Semiconductor Modules

Supplier Device Package :

SOT-227B

Subcategory :

Discrete Semiconductor Modules

Number of Pins :

4

Vgs (Max) :

±30V

Factory Lead Time :

30 Weeks

Package / Case :

SOT-227-4, miniBLOC

Avalanche Energy Rating (Eas) :

5000 mJ

Length :

38.23 mm

Gate to Source Voltage (Vgs) :

30V

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.27Ohm

Lead Free :

Lead Free

Mounting Type :

Chassis Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Maximum Operating Temperature :

+ 150 C

Power Dissipation-Max :

625W Tc

Number of Elements :

1

Tradename :

HiPerFET

Case Connection :

Isolated

Vgs(th) (Max) @ Id :

5V @ 8mA

Mounting Style :

Screw Mounts

Base Product Number :

IXFN32

RoHS :

Details

Transistor Polarity :

N-Channel

Power Dissipation (Max) :

625W (Tc)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Surface Mount :

No

Mount :

Chassis Mount

Series :

PolarHV™

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Packaging :

Tube

JESD-30 Code :

R-PUFM-X4

Brand :

IXYS

Drive Voltage (Max Rds On,Min Rds On) :

10V

DS Breakdown Voltage-Min :

800 V

Rds On (Max) @ Id, Vgs :

270m Ω @ 16A, 10V

Package :

Tube

Current - Continuous Drain (Id) @ 25°C :

29A Tc

Rise Time :

29 ns

Pin Count :

4

Reach Compliance Code :

Compliant

Terminal Finish :

Nickel (Ni)

Continuous Drain Current (ID) :

29A

Turn-Off Delay Time :

85 ns

Product :

Power MOSFET Modules

RoHS Status :

ROHS3 Compliant

Type :

HiPerFET

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Breakdown Voltage :

800V

Number of Channels :

1 Channel

FET Feature :

--

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

AVALANCHE RATED

Published :

2006

Width :

25.42 mm

Polarity/Channel Type :

N-Channel

Package Shape :

RECTANGULAR

Product Category :

Discrete Semiconductor Modules

Input Capacitance (Ciss) (Max) @ Vds :

8820pF @ 25V

Minimum Operating Temperature :

- 55 C

Pulsed Drain Current-Max (IDM) :

250A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

UNSPECIFIED

Number of Terminals :

4

Drain to Source Voltage (Vdss) :

800V

Product Status :

Active