IXFN32N80P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Polarity :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

8820pF @ 25V

Additional Feature :

AVALANCHE RATED

Product Type :

Discrete Semiconductor Modules

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Vgs(th) (Max) @ Id :

5V @ 8mA

Lead Free :

Lead Free

Polarity/Channel Type :

N-Channel

JESD-30 Code :

R-PUFM-X4

Transistor Application :

SWITCHING

Mounting Style :

Screw Mounts

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

250A

Tradename :

HiPerFET

Product :

Power MOSFET Modules

Drain to Source Breakdown Voltage :

800V

Number of Channels :

1 Channel

Number of Elements :

1

Brand :

IXYS

Operating Temperature :

-55°C~150°C TJ

Rise Time :

29 ns

Turn-Off Delay Time :

85 ns

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

800V

Drain-source On Resistance-Max :

0.27Ohm

Power Dissipation (Max) :

625W (Tc)

Current - Continuous Drain (Id) @ 25°C :

29A Tc

Base Product Number :

IXFN32

Terminal Form :

UNSPECIFIED

Width :

25.42 mm

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

30 Weeks

Mounting Type :

Chassis Mount

Manufacturer :

IXYS

Surface Mount :

No

Number of Terminals :

4

Mount :

Chassis Mount

Number of Terminations :

4

Product Status :

Active

RoHS :

Details

Package Shape :

RECTANGULAR

Series :

PolarHV™

DS Breakdown Voltage-Min :

800 V

Package / Case :

SOT-227-4, miniBLOC

Avalanche Energy Rating (Eas) :

5000 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Pins :

4

Transistor Element Material :

SILICON

Product Category :

Discrete Semiconductor Modules

Terminal Position :

UPPER

Gate to Source Voltage (Vgs) :

30V

Packaging :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

Isolated

Height :

9.6 mm

Published :

2006

Minimum Operating Temperature :

- 55 C

Package :

Tube

FET Feature :

--

Reach Compliance Code :

Compliant

Power Dissipation :

625W

Rds On (Max) @ Id, Vgs :

270m Ω @ 16A, 10V

Supplier Device Package :

SOT-227B

Subcategory :

Discrete Semiconductor Modules

Vgs (Max) :

±30V

Length :

38.23 mm

Qualification Status :

Not Qualified

Terminal Finish :

Nickel (Ni)

Pin Count :

4

Power Dissipation-Max :

625W Tc

Continuous Drain Current (ID) :

29A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Maximum Operating Temperature :

+ 150 C

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Type :

HiPerFET