IXFN32N60

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Mfr.Part #
IXFN32N60
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 600V 32A SOT227B
Stock
3,562
In Stock :
3,562

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Minimum Operating Temperature :
- 55 C
Product Status :
Active
Polarity/Channel Type :
N-Channel
Length :
38.3 mm
Drain to Source Voltage (Vdss) :
600V
Power Dissipation :
520W
Turn-Off Delay Time :
100 ns
Qualification Status :
Not Qualified
Published :
1996
Fall Time (Typ) :
60 ns
Mounting Type :
Chassis Mount
Product Type :
Discrete Semiconductor Modules
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Chassis Mount
Continuous Drain Current (ID) :
32A
Maximum Operating Temperature :
+ 150 C
Packaging :
Tube
Power Dissipation (Max) :
520AW (Tc)
Drain to Source Breakdown Voltage :
600V
Pulsed Drain Current-Max (IDM) :
128A
Number of Elements :
1
Additional Feature :
AVALANCHE RATED
Series :
HiPerFET™
Operating Mode :
ENHANCEMENT MODE
Package Shape :
RECTANGULAR
RoHS :
Details
Transistor Application :
SWITCHING
Rds On (Max) @ Id, Vgs :
250m Ω @ 500mA, 10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Height :
9.6 mm
Operating Temperature :
-55°C~150°C TJ
Supplier Device Package :
SOT-227B
Base Product Number :
IXFN32
Power Dissipation-Max (Abs) :
520 W
Surface Mount :
No
FET Technology :
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code :
R-PUFM-X4
Package / Case :
SOT-227-4, miniBLOC
Gate Charge (Qg) (Max) @ Vgs :
325nC @ 10V
FET Type :
N-Channel
Configuration :
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min :
600 V
Terminal Finish :
Nickel (Ni)
Number of Terminals :
4
Terminal Form :
UNSPECIFIED
Current - Continuous Drain (Id) @ 25°C :
32A Tc
Input Capacitance (Ciss) (Max) @ Vds :
9000pF @ 25V
Width :
25.07 mm
Transistor Polarity :
N-Channel
Gate to Source Voltage (Vgs) :
20V
Power Dissipation-Max :
520AW Tc
Rise Time :
45ns
Transistor Element Material :
SILICON
Vgs(th) (Max) @ Id :
4.5V @ 8mA
Pin Count :
4
Product Category :
Discrete Semiconductor Modules
Drain Current-Max (Abs) (ID) :
32 A
Manufacturer :
IXYS
Number of Channels :
1 Channel
Terminal Position :
UPPER
Package :
Tube
Reach Compliance Code :
Compliant
Case Connection :
Isolated
Pbfree Code :
yes
Brand :
IXYS
Vgs (Max) :
±20V
Tradename :
HyperFET
Drain-source On Resistance-Max :
0.25Ohm
RoHS Status :
ROHS3 Compliant
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Terminations :
4
Mounting Style :
Chassis Mount
FET Feature :
--
Datasheets
IXFN32N60
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFN32N60 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Chassis Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:SOT-227-4, miniBLOC, Number of Channels:1 Channel, Number of Terminations:4, IXFN32N60 pinout, IXFN32N60 datasheet PDF, IXFN32N60 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFN32N60 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFN32N60


N-Channel Tube 250m Ω @ 500mA, 10V ±20V 9000pF @ 25V 325nC @ 10V 600V SOT-227-4, miniBLOC

IXFN32N60 Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 9000pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 32A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=600V. And this device has 600V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 32 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 100 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 128A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 600 V in order to maintain normal operation.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFN32N60 Features


a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 128A.
a 600V drain to source voltage (Vdss)


IXFN32N60 Applications


There are a lot of IXYS
IXFN32N60 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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