IXFN32N60

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

100 ns

Rise Time :

45ns

Surface Mount :

No

Qualification Status :

Not Qualified

Power Dissipation-Max (Abs) :

520 W

Power Dissipation :

520W

Number of Channels :

1 Channel

JESD-30 Code :

R-PUFM-X4

Drive Voltage (Max Rds On,Min Rds On) :

10V

Product Type :

Discrete Semiconductor Modules

Pbfree Code :

yes

Case Connection :

Isolated

Gate to Source Voltage (Vgs) :

20V

Base Product Number :

IXFN32

Packaging :

Tube

Length :

38.3 mm

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Width :

25.07 mm

Manufacturer :

IXYS

RoHS :

Details

Mount :

Chassis Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Product Category :

Discrete Semiconductor Modules

Published :

1996

Polarity/Channel Type :

N-Channel

Power Dissipation (Max) :

520AW (Tc)

Continuous Drain Current (ID) :

32A

Rds On (Max) @ Id, Vgs :

250m Ω @ 500mA, 10V

Package :

Tube

Drain Current-Max (Abs) (ID) :

32 A

Series :

HiPerFET™

Drain to Source Breakdown Voltage :

600V

Tradename :

HyperFET

Fall Time (Typ) :

60 ns

FET Type :

N-Channel

Package Shape :

RECTANGULAR

Supplier Device Package :

SOT-227B

Terminal Form :

UNSPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

520AW Tc

Additional Feature :

AVALANCHE RATED

Pin Count :

4

Package / Case :

SOT-227-4, miniBLOC

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Vgs(th) (Max) @ Id :

4.5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs :

325nC @ 10V

Vgs (Max) :

±20V

Brand :

IXYS

FET Technology :

METAL-OXIDE SEMICONDUCTOR

DS Breakdown Voltage-Min :

600 V

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

9000pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.25Ohm

Transistor Polarity :

N-Channel

Number of Terminations :

4

Transistor Element Material :

SILICON

Reach Compliance Code :

Compliant

Mounting Style :

Chassis Mount

Maximum Operating Temperature :

+ 150 C

Height :

9.6 mm

Number of Terminals :

4

Pulsed Drain Current-Max (IDM) :

128A

Minimum Operating Temperature :

- 55 C

Product Status :

Active

Terminal Finish :

Nickel (Ni)

Mounting Type :

Chassis Mount

FET Feature :

--

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

600V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

UPPER

Number of Elements :

1