IXFN32N60
- Mfr.Part #
- IXFN32N60
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 32A SOT227B
- Stock
- 3,562
- In Stock :
- 3,562
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Minimum Operating Temperature :
- - 55 C
- Product Status :
- Active
- Polarity/Channel Type :
- N-Channel
- Length :
- 38.3 mm
- Drain to Source Voltage (Vdss) :
- 600V
- Power Dissipation :
- 520W
- Turn-Off Delay Time :
- 100 ns
- Qualification Status :
- Not Qualified
- Published :
- 1996
- Fall Time (Typ) :
- 60 ns
- Mounting Type :
- Chassis Mount
- Product Type :
- Discrete Semiconductor Modules
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Chassis Mount
- Continuous Drain Current (ID) :
- 32A
- Maximum Operating Temperature :
- + 150 C
- Packaging :
- Tube
- Power Dissipation (Max) :
- 520AW (Tc)
- Drain to Source Breakdown Voltage :
- 600V
- Pulsed Drain Current-Max (IDM) :
- 128A
- Number of Elements :
- 1
- Additional Feature :
- AVALANCHE RATED
- Series :
- HiPerFET™
- Operating Mode :
- ENHANCEMENT MODE
- Package Shape :
- RECTANGULAR
- RoHS :
- Details
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 250m Ω @ 500mA, 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Height :
- 9.6 mm
- Operating Temperature :
- -55°C~150°C TJ
- Supplier Device Package :
- SOT-227B
- Base Product Number :
- IXFN32
- Power Dissipation-Max (Abs) :
- 520 W
- Surface Mount :
- No
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- JESD-30 Code :
- R-PUFM-X4
- Package / Case :
- SOT-227-4, miniBLOC
- Gate Charge (Qg) (Max) @ Vgs :
- 325nC @ 10V
- FET Type :
- N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- DS Breakdown Voltage-Min :
- 600 V
- Terminal Finish :
- Nickel (Ni)
- Number of Terminals :
- 4
- Terminal Form :
- UNSPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 9000pF @ 25V
- Width :
- 25.07 mm
- Transistor Polarity :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 520AW Tc
- Rise Time :
- 45ns
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 4.5V @ 8mA
- Pin Count :
- 4
- Product Category :
- Discrete Semiconductor Modules
- Drain Current-Max (Abs) (ID) :
- 32 A
- Manufacturer :
- IXYS
- Number of Channels :
- 1 Channel
- Terminal Position :
- UPPER
- Package :
- Tube
- Reach Compliance Code :
- Compliant
- Case Connection :
- Isolated
- Pbfree Code :
- yes
- Brand :
- IXYS
- Vgs (Max) :
- ±20V
- Tradename :
- HyperFET
- Drain-source On Resistance-Max :
- 0.25Ohm
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminations :
- 4
- Mounting Style :
- Chassis Mount
- FET Feature :
- --
- Datasheets
- IXFN32N60

N-Channel Tube 250m Ω @ 500mA, 10V ±20V 9000pF @ 25V 325nC @ 10V 600V SOT-227-4, miniBLOC
IXFN32N60 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 9000pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 32A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=600V. And this device has 600V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 32 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 100 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 128A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 600 V in order to maintain normal operation.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFN32N60 Features
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 128A.
a 600V drain to source voltage (Vdss)
IXFN32N60 Applications
There are a lot of IXYS
IXFN32N60 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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