IXFN32N60

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

Isolated

Operating Temperature :

-55°C~150°C TJ

Base Product Number :

IXFN32

Terminal Position :

UPPER

Transistor Element Material :

SILICON

Polarity/Channel Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Product Type :

Discrete Semiconductor Modules

Reach Compliance Code :

Compliant

Mount :

Chassis Mount

Published :

1996

Turn-Off Delay Time :

100 ns

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

60 ns

Pin Count :

4

Minimum Operating Temperature :

- 55 C

Rds On (Max) @ Id, Vgs :

250m Ω @ 500mA, 10V

Series :

HiPerFET™

Drain to Source Breakdown Voltage :

600V

Transistor Application :

SWITCHING

JESD-30 Code :

R-PUFM-X4

Gate Charge (Qg) (Max) @ Vgs :

325nC @ 10V

Pbfree Code :

yes

Product Status :

Active

FET Feature :

--

Mounting Type :

Chassis Mount

Drain Current-Max (Abs) (ID) :

32 A

Package / Case :

SOT-227-4, miniBLOC

Package Shape :

RECTANGULAR

Power Dissipation (Max) :

520AW (Tc)

Vgs (Max) :

±20V

Mounting Style :

Chassis Mount

Drain to Source Voltage (Vdss) :

600V

Power Dissipation-Max (Abs) :

520 W

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube

Brand :

IXYS

Terminal Form :

UNSPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Manufacturer :

IXYS

Vgs(th) (Max) @ Id :

4.5V @ 8mA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Tradename :

HyperFET

Supplier Device Package :

SOT-227B

Power Dissipation-Max :

520AW Tc

Input Capacitance (Ciss) (Max) @ Vds :

9000pF @ 25V

RoHS :

Details

Number of Terminals :

4

Transistor Polarity :

N-Channel

Surface Mount :

No

Drain-source On Resistance-Max :

0.25Ohm

Number of Terminations :

4

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Width :

25.07 mm

Number of Channels :

1 Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation :

520W

DS Breakdown Voltage-Min :

600 V

FET Type :

N-Channel

Length :

38.3 mm

Rise Time :

45ns

Qualification Status :

Not Qualified

Number of Elements :

1

Continuous Drain Current (ID) :

32A

Maximum Operating Temperature :

+ 150 C

Height :

9.6 mm

Pulsed Drain Current-Max (IDM) :

128A

Package :

Tube

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Nickel (Ni)

Additional Feature :

AVALANCHE RATED

Product Category :

Discrete Semiconductor Modules