IXFN32N120P

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Mfr.Part #
IXFN32N120P
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 1200V 32A SOT-227B
Stock
30,548
In Stock :
30,548

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Configuration :
SINGLE WITH BUILT-IN DIODE
FET Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminals :
4
Power Dissipation-Max (Abs) :
1000 W
Qualification Status :
Not Qualified
Pulsed Drain Current-Max (IDM) :
100 A
Tradename :
HiPerFET
Length :
38.23 mm
Product Type :
Discrete Semiconductor Modules
DS Breakdown Voltage-Min :
1200 V
Series :
Polar™
Factory Lead Time :
20 Weeks
Brand :
IXYS
Product Category :
Discrete Semiconductor Modules
Published :
2010
Maximum Operating Temperature :
+ 150 C
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Base Product Number :
IXFN32
Rise Time :
62ns
Supplier Device Package :
SOT-227B
Terminal Finish :
Nickel (Ni)
Power Dissipation (Max) :
1000W (Tc)
Mounting Style :
Screw Mounts
Terminal Position :
UPPER
Pin Count :
4
Drain Current-Max (Abs) (ID) :
32 A
Manufacturer :
IXYS
Drive Voltage (Max Rds On,Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
310m Ω @ 500mA, 10V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mount :
Chassis Mount, Screw
Number of Channels :
1 Channel
Drain to Source Voltage (Vdss) :
1200V
Minimum Operating Temperature :
- 55 C
FET Feature :
--
Drain to Source Breakdown Voltage :
1.2kV
JESD-30 Code :
R-PUFM-X4
Power Dissipation :
830W
Package / Case :
SOT-227-4, miniBLOC
Polarity/Channel Type :
N-Channel
Width :
25.42 mm
Transistor Application :
SWITCHING
Packaging :
Tube
Vgs (Max) :
±30V
Turn-Off Delay Time :
88 ns
Transistor Element Material :
SILICON
Number of Terminations :
4
Reach Compliance Code :
Compliant
Surface Mount :
No
Product Status :
Active
Pbfree Code :
yes
Transistor Polarity :
N-Channel
Operating Mode :
ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds :
21000pF @ 25V
Vgs(th) (Max) @ Id :
6.5V @ 1mA
Product :
Power MOSFET Modules
Gate Charge (Qg) (Max) @ Vgs :
360nC @ 10V
Height :
12.22 mm
Mounting Type :
Chassis Mount
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
Fall Time (Typ) :
48 ns
Terminal Form :
UNSPECIFIED
Number of Elements :
1
Case Connection :
Isolated
Drain-source On Resistance-Max :
0.31 Ω
Number of Pins :
4
Power Dissipation-Max :
1000W Tc
Current - Continuous Drain (Id) @ 25°C :
32A Tc
RoHS :
Details
Package Shape :
RECTANGULAR
Package :
Tube
Gate to Source Voltage (Vgs) :
30V
Continuous Drain Current (ID) :
32A
Operating Temperature :
-55°C~150°C TJ
Type :
Polar HiPerFET Power MOSFET
RoHS Status :
ROHS3 Compliant
Radiation Hardening :
No
Avalanche Energy Rating (Eas) :
2000 mJ
Datasheets
IXFN32N120P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFN32N120P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Package / Case:SOT-227-4, miniBLOC, Number of Terminations:4, Mounting Type:Chassis Mount, Number of Pins:4, Operating Temperature:-55°C~150°C TJ, Type:Polar HiPerFET Power MOSFET, IXFN32N120P pinout, IXFN32N120P datasheet PDF, IXFN32N120P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFN32N120P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFN32N120P


N-Channel Tube 310m Ω @ 500mA, 10V ±30V 21000pF @ 25V 360nC @ 10V 1200V SOT-227-4, miniBLOC

IXFN32N120P Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 2000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 21000pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 32A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 1.2kV, and this device has a drainage-to-source breakdown voltage of 1.2kVV.Drain current refers to the maximum continuous current a device can conduct, and it is 32 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 88 ns.Peak drain current is 100 A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 1200 V.For this transistor to work, a voltage 1200V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFN32N120P Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 88 ns
based on its rated peak drain current 100 A.
a 1200V drain to source voltage (Vdss)


IXFN32N120P Applications


There are a lot of IXYS
IXFN32N120P applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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