IXFN32N120P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

100 A

Supplier Device Package :

SOT-227B

Power Dissipation-Max :

1000W Tc

Number of Channels :

1 Channel

Terminal Position :

UPPER

Tradename :

HiPerFET

Number of Pins :

4

Length :

38.23 mm

Fall Time (Typ) :

48 ns

Power Dissipation :

830W

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Chassis Mount

RoHS :

Details

Number of Terminals :

4

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Drain to Source Breakdown Voltage :

1.2kV

Surface Mount :

No

FET Feature :

--

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Reach Compliance Code :

Compliant

Continuous Drain Current (ID) :

32A

Input Capacitance (Ciss) (Max) @ Vds :

21000pF @ 25V

Package Shape :

RECTANGULAR

JESD-30 Code :

R-PUFM-X4

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

360nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2010

Gate to Source Voltage (Vgs) :

30V

Case Connection :

Isolated

Series :

Polar™

Product Status :

Active

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Style :

Screw Mounts

Rds On (Max) @ Id, Vgs :

310m Ω @ 500mA, 10V

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Power Dissipation-Max (Abs) :

1000 W

Terminal Form :

UNSPECIFIED

Number of Terminations :

4

Maximum Operating Temperature :

+ 150 C

Mount :

Chassis Mount, Screw

Drain-source On Resistance-Max :

0.31 Ω

Transistor Element Material :

SILICON

Rise Time :

62ns

DS Breakdown Voltage-Min :

1200 V

Power Dissipation (Max) :

1000W (Tc)

Factory Lead Time :

20 Weeks

Base Product Number :

IXFN32

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

1200V

Qualification Status :

Not Qualified

Vgs (Max) :

±30V

Minimum Operating Temperature :

- 55 C

Terminal Finish :

Nickel (Ni)

Type :

Polar HiPerFET Power MOSFET

Height :

12.22 mm

Avalanche Energy Rating (Eas) :

2000 mJ

Product :

Power MOSFET Modules

Product Type :

Discrete Semiconductor Modules

Product Category :

Discrete Semiconductor Modules

Brand :

IXYS

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

SOT-227-4, miniBLOC

Configuration :

SINGLE WITH BUILT-IN DIODE

Package :

Tube

Width :

25.42 mm

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Transistor Polarity :

N-Channel

Manufacturer :

IXYS

Pin Count :

4

Pbfree Code :

yes

Polarity/Channel Type :

N-Channel

Transistor Application :

SWITCHING

Turn-Off Delay Time :

88 ns

Radiation Hardening :

No

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

32 A