IXFN32N120P
- Mfr.Part #
- IXFN32N120P
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 1200V 32A SOT-227B
- Stock
- 30,548
- In Stock :
- 30,548
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Drain-source On Resistance-Max :
- 0.31 Ω
- Gate to Source Voltage (Vgs) :
- 30V
- Transistor Application :
- SWITCHING
- Minimum Operating Temperature :
- - 55 C
- DS Breakdown Voltage-Min :
- 1200 V
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Rds On (Max) @ Id, Vgs :
- 310m Ω @ 500mA, 10V
- Turn-Off Delay Time :
- 88 ns
- Rise Time :
- 62ns
- RoHS :
- Details
- Gate Charge (Qg) (Max) @ Vgs :
- 360nC @ 10V
- Reach Compliance Code :
- Compliant
- JESD-30 Code :
- R-PUFM-X4
- Qualification Status :
- Not Qualified
- Width :
- 25.42 mm
- Product :
- Power MOSFET Modules
- FET Feature :
- --
- Package / Case :
- SOT-227-4, miniBLOC
- Number of Elements :
- 1
- Fall Time (Typ) :
- 48 ns
- Pbfree Code :
- yes
- Brand :
- IXYS
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Published :
- 2010
- Vgs(th) (Max) @ Id :
- 6.5V @ 1mA
- Mounting Style :
- Screw Mounts
- Tradename :
- HiPerFET
- Terminal Finish :
- Nickel (Ni)
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Power Dissipation :
- 830W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- Polarity/Channel Type :
- N-Channel
- FET Type :
- N-Channel
- Factory Lead Time :
- 20 Weeks
- Base Product Number :
- IXFN32
- Supplier Device Package :
- SOT-227B
- Number of Terminations :
- 4
- Input Capacitance (Ciss) (Max) @ Vds :
- 21000pF @ 25V
- Product Category :
- Discrete Semiconductor Modules
- Height :
- 12.22 mm
- Number of Pins :
- 4
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- No
- Power Dissipation-Max (Abs) :
- 1000 W
- Length :
- 38.23 mm
- Transistor Polarity :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Pulsed Drain Current-Max (IDM) :
- 100 A
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- Type :
- Polar HiPerFET Power MOSFET
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Radiation Hardening :
- No
- Manufacturer :
- IXYS
- Power Dissipation (Max) :
- 1000W (Tc)
- Power Dissipation-Max :
- 1000W Tc
- Continuous Drain Current (ID) :
- 32A
- Terminal Position :
- UPPER
- Package :
- Tube
- Product Status :
- Active
- Drain to Source Breakdown Voltage :
- 1.2kV
- Case Connection :
- Isolated
- Terminal Form :
- UNSPECIFIED
- Mounting Type :
- Chassis Mount
- Number of Terminals :
- 4
- Pin Count :
- 4
- Mount :
- Chassis Mount, Screw
- Product Type :
- Discrete Semiconductor Modules
- Vgs (Max) :
- ±30V
- Series :
- Polar™
- Drain Current-Max (Abs) (ID) :
- 32 A
- Package Shape :
- RECTANGULAR
- Drain to Source Voltage (Vdss) :
- 1200V
- Operating Temperature :
- -55°C~150°C TJ
- Maximum Operating Temperature :
- + 150 C
- Number of Channels :
- 1 Channel
- Datasheets
- IXFN32N120P

N-Channel Tube 310m Ω @ 500mA, 10V ±30V 21000pF @ 25V 360nC @ 10V 1200V SOT-227-4, miniBLOC
IXFN32N120P Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 2000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 21000pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 32A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 1.2kV, and this device has a drainage-to-source breakdown voltage of 1.2kVV.Drain current refers to the maximum continuous current a device can conduct, and it is 32 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 88 ns.Peak drain current is 100 A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 1200 V.For this transistor to work, a voltage 1200V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFN32N120P Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 88 ns
based on its rated peak drain current 100 A.
a 1200V drain to source voltage (Vdss)
IXFN32N120P Applications
There are a lot of IXYS
IXFN32N120P applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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