IXFN32N120

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mount :

Chassis Mount, Screw

Vgs (Max) :

±30V

Maximum Operating Temperature :

+ 150 C

Published :

2010

FET Feature :

--

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

310m Ω @ 500mA, 10V

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Radiation Hardening :

No

Package / Case :

SOT-227-4, miniBLOC

Continuous Drain Current (ID) :

32A

Width :

25.42 mm

Drain to Source Breakdown Voltage :

1.2kV

Length :

38.23 mm

Polarity/Channel Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

100 A

Supplier Device Package :

SOT-227B

Minimum Operating Temperature :

- 55 C

Mounting Style :

Screw Mounts

Series :

Polar™

Drain to Source Voltage (Vdss) :

1200V

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Transistor Polarity :

N-Channel

Manufacturer :

IXYS

DS Breakdown Voltage-Min :

1200 V

Gate Charge (Qg) (Max) @ Vgs :

360nC @ 10V

Number of Terminations :

4

Transistor Element Material :

SILICON

Terminal Finish :

Nickel (Ni)

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Drain Current-Max (Abs) (ID) :

32 A

Height :

12.22 mm

Power Dissipation (Max) :

1000W (Tc)

Base Product Number :

IXFN32

Reach Compliance Code :

Compliant

Terminal Position :

UPPER

Product Type :

Discrete Semiconductor Modules

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminals :

4

Packaging :

Tube

JESD-30 Code :

R-PUFM-X4

Tradename :

HiPerFET

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1 Channel

Gate to Source Voltage (Vgs) :

30V

Package :

Tube

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

48 ns

Product Status :

Active

Power Dissipation :

830W

Power Dissipation-Max (Abs) :

1000 W

Surface Mount :

No

Power Dissipation-Max :

1000W Tc

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Input Capacitance (Ciss) (Max) @ Vds :

21000pF @ 25V

Turn-Off Delay Time :

88 ns

Pin Count :

4

Product Category :

Discrete Semiconductor Modules

Mounting Type :

Chassis Mount

Factory Lead Time :

20 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

2000 mJ

Case Connection :

Isolated

Brand :

IXYS

Number of Pins :

4

Drain-source On Resistance-Max :

0.31 Ω

Pbfree Code :

yes

Terminal Form :

UNSPECIFIED

RoHS :

Details

Type :

Polar HiPerFET Power MOSFET

Rise Time :

62ns

Transistor Application :

SWITCHING

Product :

Power MOSFET Modules

Package Shape :

RECTANGULAR