IXFN32N120

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

1200V

Height :

12.22 mm

Package Shape :

RECTANGULAR

Mounting Type :

Chassis Mount

Rise Time :

62ns

Number of Elements :

1

Base Product Number :

IXFN32

Number of Pins :

4

Product Category :

Discrete Semiconductor Modules

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Rds On (Max) @ Id, Vgs :

310m Ω @ 500mA, 10V

Transistor Element Material :

SILICON

Turn-Off Delay Time :

88 ns

Vgs (Max) :

±30V

Packaging :

Tube

Package / Case :

SOT-227-4, miniBLOC

Factory Lead Time :

20 Weeks

Power Dissipation-Max :

1000W Tc

Series :

Polar™

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Minimum Operating Temperature :

- 55 C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Brand :

IXYS

FET Feature :

--

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

1200 V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Product Status :

Active

Manufacturer :

IXYS

Case Connection :

Isolated

Tradename :

HiPerFET

RoHS Status :

ROHS3 Compliant

Width :

25.42 mm

Length :

38.23 mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

32 A

Pin Count :

4

Power Dissipation :

830W

Input Capacitance (Ciss) (Max) @ Vds :

21000pF @ 25V

Product Type :

Discrete Semiconductor Modules

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code :

R-PUFM-X4

FET Type :

N-Channel

Reach Compliance Code :

Compliant

Package :

Tube

Transistor Application :

SWITCHING

Terminal Finish :

Nickel (Ni)

Gate Charge (Qg) (Max) @ Vgs :

360nC @ 10V

Drain-source On Resistance-Max :

0.31 Ω

Supplier Device Package :

SOT-227B

Maximum Operating Temperature :

+ 150 C

Drain to Source Breakdown Voltage :

1.2kV

Published :

2010

Number of Terminations :

4

Pulsed Drain Current-Max (IDM) :

100 A

Fall Time (Typ) :

48 ns

Operating Temperature :

-55°C~150°C TJ

Type :

Polar HiPerFET Power MOSFET

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

No

Power Dissipation-Max (Abs) :

1000 W

Avalanche Energy Rating (Eas) :

2000 mJ

Terminal Form :

UNSPECIFIED

Terminal Position :

UPPER

Power Dissipation (Max) :

1000W (Tc)

Gate to Source Voltage (Vgs) :

30V

Polarity/Channel Type :

N-Channel

Continuous Drain Current (ID) :

32A

Transistor Polarity :

N-Channel

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Number of Channels :

1 Channel

Pbfree Code :

yes

Product :

Power MOSFET Modules

Mounting Style :

Screw Mounts

Mount :

Chassis Mount, Screw

Number of Terminals :

4

RoHS :

Details