IXFN32N100Q3

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Mfr.Part #
IXFN32N100Q3
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 1000V 28A SOT227B
Stock
10
In Stock :
10

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
28A Tc
Case Connection :
Isolated
Operating Temperature :
-55°C~150°C TJ
Maximum Operating Temperature :
+150 °C
Gate to Source Voltage (Vgs) :
30V
Product Type :
Discrete Semiconductor Modules
Number of Pins :
4
Operating Mode :
ENHANCEMENT MODE
Avalanche Energy Rating (Eas) :
3000 mJ
Base Product Number :
IXFN32
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Turn-Off Delay Time :
54 ns
Terminal Form :
UNSPECIFIED
Channel Type :
N
Power Dissipation-Max :
780W Tc
Transistor Element Material :
SILICON
Surface Mount :
No
Polarity/Channel Type :
N-Channel
Tradename :
HiPerFET
Power Dissipation :
780W
Product :
Power MOSFET Modules
Transistor Polarity :
N-Channel
DS Breakdown Voltage-Min :
1000 V
Gate Charge (Qg) (Max) @ Vgs :
195nC @ 10V
Channel Mode :
Enhancement
Published :
2012
Product Status :
Active
Terminal Position :
UPPER
Pulsed Drain Current-Max (IDM) :
96A
Packaging :
Tube
Mount :
Chassis Mount, Panel
Continuous Drain Current (ID) :
28A
FET Feature :
--
Type :
HiPerFET
Brand :
IXYS
Transistor Application :
SWITCHING
Power Dissipation-Max (Abs) :
780 W
Manufacturer :
IXYS
Number of Elements per Chip :
1
RoHS :
Details
Minimum Operating Temperature :
-55 °C
Rds On (Max) @ Id, Vgs :
320m Ω @ 16A, 10V
Power Dissipation (Max) :
780W (Tc)
Number of Terminals :
4
Mounting Type :
Chassis Mount
FET Type :
N-Channel
Product Category :
Discrete Semiconductor Modules
Height :
9.6mm
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Channels :
1 Channel
Length :
38.23mm
Mounting Style :
Screw Mounts
Series :
HiPerFET™
Pin Count :
4
Vgs(th) (Max) @ Id :
6.5V @ 8mA
Width :
25.07mm
Factory Lead Time :
30 Weeks
Number of Elements :
1
Rise Time :
300ns
Drain to Source Voltage (Vdss) :
1000V
Element Configuration :
Single
Package / Case :
SOT-227-4, miniBLOC
Drain Current-Max (Abs) (ID) :
28 A
RoHS Status :
ROHS3 Compliant
Turn On Delay Time :
45 ns
Input Capacitance (Ciss) (Max) @ Vds :
9940pF @ 25V
Package :
Tube
Configuration :
Single
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
Package Shape :
RECTANGULAR
Package Type :
SOT-227
Reach Compliance Code :
Unknown
Number of Terminations :
4
Drain-source On Resistance-Max :
0.32Ohm
JESD-30 Code :
R-XUFM-X4
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage :
1kV
Supplier Device Package :
SOT-227B
Vgs (Max) :
±30V
Datasheets
IXFN32N100Q3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFN32N100Q3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:4, Type:HiPerFET, Mounting Type:Chassis Mount, Number of Channels:1 Channel, Package / Case:SOT-227-4, miniBLOC, Number of Terminations:4, IXFN32N100Q3 pinout, IXFN32N100Q3 datasheet PDF, IXFN32N100Q3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFN32N100Q3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFN32N100Q3


N-Channel Tube 320m Ω @ 16A, 10V ±30V 9940pF @ 25V 195nC @ 10V 1000V SOT-227-4, miniBLOC

IXFN32N100Q3 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 3000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 9940pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 28A.With a drain-source breakdown voltage of 1kV and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 1kV.28 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 54 ns.Peak drain current for this device is 96A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 45 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 1000 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1000V.Using drive voltage (10V) reduces this device's overall power consumption.

IXFN32N100Q3 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 28A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 54 ns
based on its rated peak drain current 96A.
a 1000V drain to source voltage (Vdss)


IXFN32N100Q3 Applications


There are a lot of IXYS
IXFN32N100Q3 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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