IXFN32N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Resistance :

320mOhm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

320mOhm @ 16A, 10V

Length :

38.23 mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.32 Ω

Width :

25.42 mm

Supplier Device Package :

SOT-227B

Published :

2007

Rds On Max :

320 mΩ

Current - Continuous Drain (Id) @ 25°C :

27A Tc

Power Dissipation :

690W

Maximum Operating Temperature :

+ 150 C

Radiation Hardening :

No

Max Operating Temperature :

150°C

Number of Channels :

1 Channel

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Minimum Operating Temperature :

- 55 C

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

225nC @ 10V

Drain to Source Breakdown Voltage :

1kV

Height :

12.22 mm

Operating Mode :

ENHANCEMENT MODE

Rise Time :

55ns

Surface Mount :

No

Pulsed Drain Current-Max (IDM) :

75 A

Number of Terminals :

4

Min Operating Temperature :

-55°C

Brand :

IXYS

JESD-30 Code :

R-PUFM-X4

Transistor Application :

SWITCHING

Packaging :

Tube

Terminal Finish :

Nickel (Ni)

Mounting Style :

Screw Mounts

Tradename :

HiPerFET

Polarity/Channel Type :

N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Chassis Mount

Input Capacitance :

14.2nF

Power Dissipation-Max (Abs) :

690 W

Type :

Polar Power MOSFET HiPerFET

Number of Pins :

4

Series :

Polar™

Product Category :

Discrete Semiconductor Modules

Factory Lead Time :

30 Weeks

Gate to Source Voltage (Vgs) :

30V

Case Connection :

Isolated

Terminal Form :

UNSPECIFIED

Power Dissipation (Max) :

690W (Tc)

Power Dissipation-Max :

690W Tc

Terminal Position :

UPPER

RoHS Status :

ROHS3 Compliant

Manufacturer :

IXYS

FET Feature :

--

DS Breakdown Voltage-Min :

1000 V

Lead Free :

Lead Free

Number of Elements :

1

Transistor Element Material :

SILICON

Subcategory :

Discrete Semiconductor Modules

Resistance :

320mOhm

Input Capacitance (Ciss) (Max) @ Vds :

14200pF @ 25V

Product Status :

Active

Drain Current-Max (Abs) (ID) :

27 A

Additional Feature :

UL RECOGNIZED, AVALANCHE RATED

Reach Compliance Code :

Compliant

Base Product Number :

IXFN32

Product Type :

Discrete Semiconductor Modules

Product :

Power MOSFET Modules

Avalanche Energy Rating (Eas) :

1500 mJ

Package Shape :

RECTANGULAR

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Polarity :

N-Channel

Package :

Tube

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

43 ns

Mount :

Chassis Mount, Screw

Drain to Source Voltage (Vdss) :

1000V

Qualification Status :

Not Qualified

Package / Case :

SOT-227-4, miniBLOC

Turn-Off Delay Time :

76 ns

RoHS :

Details

Vgs (Max) :

±30V

Continuous Drain Current (ID) :

27A

Configuration :

Single