IXFN320N17T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Number of Terminations :

4

Lead Free :

Lead Free

Mounting Style :

Screw Mounts

Terminal Form :

UNSPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

640nC @ 10V

ECCN Code :

EAR99

Pin Count :

4

Number of Elements :

1

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

260A

Max Operating Temperature :

175 °C

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Type :

GigaMOS Trench T2 HiperFet

Input Capacitance (Ciss) (Max) @ Vds :

45000pF @ 25V

Turn-On Delay Time :

46 ns

FET Feature :

--

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rise Time :

170ns

Additional Feature :

UL RECOGNIZED

Pulsed Drain Current-Max (IDM) :

800A

Base Product Number :

IXFN320

Drain to Source Breakdown Voltage :

170V

Factory Lead Time :

30 Weeks

Product :

Power MOSFET Modules

Terminal Finish :

Nickel

Package / Case :

SOT-227-4, miniBLOC

Nominal Supply Current :

100A

Input Capacitance :

45 nF

Maximum Operating Temperature :

+ 175 C

Output Voltage :

170V

Terminal Position :

UPPER

Operating Temperature :

-55°C~175°C TJ

Turn On Delay Time :

46 ns

Mount :

Chassis Mount

Turn-Off Delay Time :

115 ns

Power Dissipation (Max) :

1070W (Tc)

Fall Time (Typ) :

230 ns

Product Type :

Discrete Semiconductor Modules

Vgs (Max) :

±20V

Power Dissipation-Max :

1070W Tc

Rds On (Max) @ Id, Vgs :

5.2m Ω @ 60A, 10V

Packaging :

Tube

Transistor Polarity :

N-Channel

Power Dissipation :

1.07kW

Rds On Max :

5.2 mΩ

Current - Continuous Drain (Id) @ 25°C :

260A Tc

Package :

Tube

Number of Channels :

1 Channel

Vgs(th) (Max) @ Id :

5V @ 8mA

Mounting Type :

Chassis Mount

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

5000 mJ

RoHS :

Details

Max Power Dissipation :

1.07 kW

Reach Compliance Code :

Unknown

Number of Outputs :

1

Drain-source On Resistance-Max :

0.0052Ohm

JESD-30 Code :

R-PUFM-X4

Published :

2009

Output Current :

260A

Supplier Device Package :

SOT-227B

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Product Category :

Discrete Semiconductor Modules

Min Operating Temperature :

-55 °C

Minimum Operating Temperature :

- 55 C

Drain to Source Resistance :

5.2 mΩ

Drain to Source Voltage (Vdss) :

170V

FET Type :

N-Channel

Manufacturer :

IXYS

Product Status :

Active

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Case Connection :

Isolated

Tradename :

HiPerFET

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Series :

GigaMOS™

Brand :

IXYS