IXFN320N17T2
- Mfr.Part #
- IXFN320N17T2
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 170V 260A SOT227B
- Stock
- 39,748
- In Stock :
- 39,748
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Additional Feature :
- UL RECOGNIZED
- Drain-source On Resistance-Max :
- 0.0052Ohm
- Terminal Finish :
- Nickel
- Max Operating Temperature :
- 175 °C
- Number of Terminations :
- 4
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pin Count :
- 4
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- SOT-227-4, miniBLOC
- Max Power Dissipation :
- 1.07 kW
- Supplier Device Package :
- SOT-227B
- Maximum Operating Temperature :
- + 175 C
- Gate to Source Voltage (Vgs) :
- 20V
- Turn On Delay Time :
- 46 ns
- Type :
- GigaMOS Trench T2 HiperFet
- Mounting Style :
- Screw Mounts
- JESD-30 Code :
- R-PUFM-X4
- Min Operating Temperature :
- -55 °C
- Number of Outputs :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 260A Tc
- Nominal Supply Current :
- 100A
- Pulsed Drain Current-Max (IDM) :
- 800A
- Transistor Application :
- SWITCHING
- Tradename :
- HiPerFET
- Rds On (Max) @ Id, Vgs :
- 5.2m Ω @ 60A, 10V
- Product Category :
- Discrete Semiconductor Modules
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs :
- 640nC @ 10V
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Number of Channels :
- 1 Channel
- Drain to Source Breakdown Voltage :
- 170V
- Input Capacitance (Ciss) (Max) @ Vds :
- 45000pF @ 25V
- Case Connection :
- Isolated
- Published :
- 2009
- Series :
- GigaMOS™
- Power Dissipation :
- 1.07kW
- Operating Mode :
- ENHANCEMENT MODE
- Product :
- Power MOSFET Modules
- Minimum Operating Temperature :
- - 55 C
- FET Feature :
- --
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Brand :
- IXYS
- Product Status :
- Active
- Mount :
- Chassis Mount
- Output Current :
- 260A
- Input Capacitance :
- 45 nF
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 230 ns
- Reach Compliance Code :
- Unknown
- Factory Lead Time :
- 30 Weeks
- Package :
- Tube
- Power Dissipation (Max) :
- 1070W (Tc)
- Rds On Max :
- 5.2 mΩ
- RoHS :
- Details
- Configuration :
- Single
- Turn-Off Delay Time :
- 115 ns
- ECCN Code :
- EAR99
- Product Type :
- Discrete Semiconductor Modules
- Manufacturer :
- IXYS
- Continuous Drain Current (ID) :
- 260A
- Terminal Form :
- UNSPECIFIED
- Output Voltage :
- 170V
- Packaging :
- Tube
- Vgs (Max) :
- ±20V
- Pbfree Code :
- yes
- Terminal Position :
- UPPER
- Element Configuration :
- Single
- Base Product Number :
- IXFN320
- Lead Free :
- Lead Free
- Rise Time :
- 170ns
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn-On Delay Time :
- 46 ns
- Mounting Type :
- Chassis Mount
- Transistor Polarity :
- N-Channel
- Drain to Source Resistance :
- 5.2 mΩ
- Drain to Source Voltage (Vdss) :
- 170V
- Power Dissipation-Max :
- 1070W Tc
- Operating Temperature :
- -55°C~175°C TJ
- Datasheets
- IXFN320N17T2

N-Channel Tube 5.2m Ω @ 60A, 10V ±20V 45000pF @ 25V 640nC @ 10V 170V SOT-227-4, miniBLOC
IXFN320N17T2 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 5000 mJ.A device's maximal input capacitance is 45000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 260A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 170V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 115 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 800A, which is its maximum rated peak drain current.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 5.2 mΩ.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 46 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 170V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFN320N17T2 Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 260A
a drain-to-source breakdown voltage of 170V voltage
the turn-off delay time is 115 ns
based on its rated peak drain current 800A.
single MOSFETs transistor is 5.2 mΩ
a 170V drain to source voltage (Vdss)
IXFN320N17T2 Applications
There are a lot of IXYS
IXFN320N17T2 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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