IXFN320N17T2

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Mfr.Part #
IXFN320N17T2
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 170V 260A SOT227B
Stock
39,748
In Stock :
39,748

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Additional Feature :
UL RECOGNIZED
Drain-source On Resistance-Max :
0.0052Ohm
Terminal Finish :
Nickel
Max Operating Temperature :
175 °C
Number of Terminations :
4
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pin Count :
4
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package / Case :
SOT-227-4, miniBLOC
Max Power Dissipation :
1.07 kW
Supplier Device Package :
SOT-227B
Maximum Operating Temperature :
+ 175 C
Gate to Source Voltage (Vgs) :
20V
Turn On Delay Time :
46 ns
Type :
GigaMOS Trench T2 HiperFet
Mounting Style :
Screw Mounts
JESD-30 Code :
R-PUFM-X4
Min Operating Temperature :
-55 °C
Number of Outputs :
1
Current - Continuous Drain (Id) @ 25°C :
260A Tc
Nominal Supply Current :
100A
Pulsed Drain Current-Max (IDM) :
800A
Transistor Application :
SWITCHING
Tradename :
HiPerFET
Rds On (Max) @ Id, Vgs :
5.2m Ω @ 60A, 10V
Product Category :
Discrete Semiconductor Modules
Vgs(th) (Max) @ Id :
5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs :
640nC @ 10V
Qualification Status :
Not Qualified
Number of Elements :
1
Number of Channels :
1 Channel
Drain to Source Breakdown Voltage :
170V
Input Capacitance (Ciss) (Max) @ Vds :
45000pF @ 25V
Case Connection :
Isolated
Published :
2009
Series :
GigaMOS™
Power Dissipation :
1.07kW
Operating Mode :
ENHANCEMENT MODE
Product :
Power MOSFET Modules
Minimum Operating Temperature :
- 55 C
FET Feature :
--
FET Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Brand :
IXYS
Product Status :
Active
Mount :
Chassis Mount
Output Current :
260A
Input Capacitance :
45 nF
Transistor Element Material :
SILICON
RoHS Status :
ROHS3 Compliant
Fall Time (Typ) :
230 ns
Reach Compliance Code :
Unknown
Factory Lead Time :
30 Weeks
Package :
Tube
Power Dissipation (Max) :
1070W (Tc)
Rds On Max :
5.2 mΩ
RoHS :
Details
Configuration :
Single
Turn-Off Delay Time :
115 ns
ECCN Code :
EAR99
Product Type :
Discrete Semiconductor Modules
Manufacturer :
IXYS
Continuous Drain Current (ID) :
260A
Terminal Form :
UNSPECIFIED
Output Voltage :
170V
Packaging :
Tube
Vgs (Max) :
±20V
Pbfree Code :
yes
Terminal Position :
UPPER
Element Configuration :
Single
Base Product Number :
IXFN320
Lead Free :
Lead Free
Rise Time :
170ns
Avalanche Energy Rating (Eas) :
5000 mJ
Drive Voltage (Max Rds On,Min Rds On) :
10V
Turn-On Delay Time :
46 ns
Mounting Type :
Chassis Mount
Transistor Polarity :
N-Channel
Drain to Source Resistance :
5.2 mΩ
Drain to Source Voltage (Vdss) :
170V
Power Dissipation-Max :
1070W Tc
Operating Temperature :
-55°C~175°C TJ
Datasheets
IXFN320N17T2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFN320N17T2 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:4, Package / Case:SOT-227-4, miniBLOC, Type:GigaMOS Trench T2 HiperFet, Number of Channels:1 Channel, Mounting Type:Chassis Mount, Operating Temperature:-55°C~175°C TJ, IXFN320N17T2 pinout, IXFN320N17T2 datasheet PDF, IXFN320N17T2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFN320N17T2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFN320N17T2


N-Channel Tube 5.2m Ω @ 60A, 10V ±20V 45000pF @ 25V 640nC @ 10V 170V SOT-227-4, miniBLOC

IXFN320N17T2 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 5000 mJ.A device's maximal input capacitance is 45000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 260A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 170V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 115 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 800A, which is its maximum rated peak drain current.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 5.2 mΩ.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 46 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 170V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFN320N17T2 Features


the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 260A
a drain-to-source breakdown voltage of 170V voltage
the turn-off delay time is 115 ns
based on its rated peak drain current 800A.
single MOSFETs transistor is 5.2 mΩ
a 170V drain to source voltage (Vdss)


IXFN320N17T2 Applications


There are a lot of IXYS
IXFN320N17T2 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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