IXFN320N17T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Resistance :

5.2 mΩ

Supplier Device Package :

SOT-227B

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

170V

Number of Channels :

1 Channel

RoHS :

Details

Power Dissipation (Max) :

1070W (Tc)

Operating Mode :

ENHANCEMENT MODE

Max Operating Temperature :

175 °C

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

260A Tc

Type :

GigaMOS Trench T2 HiperFet

Min Operating Temperature :

-55 °C

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

640nC @ 10V

Product Category :

Discrete Semiconductor Modules

Drain to Source Breakdown Voltage :

170V

Reach Compliance Code :

Unknown

Maximum Operating Temperature :

+ 175 C

Fall Time (Typ) :

230 ns

Package / Case :

SOT-227-4, miniBLOC

Max Power Dissipation :

1.07 kW

Packaging :

Tube

Power Dissipation :

1.07kW

Drain-source On Resistance-Max :

0.0052Ohm

Continuous Drain Current (ID) :

260A

ECCN Code :

EAR99

Turn-Off Delay Time :

115 ns

Rds On (Max) @ Id, Vgs :

5.2m Ω @ 60A, 10V

Transistor Application :

SWITCHING

Turn-On Delay Time :

46 ns

Vgs (Max) :

±20V

Base Product Number :

IXFN320

Brand :

IXYS

Terminal Position :

UPPER

Published :

2009

Number of Terminations :

4

JESD-30 Code :

R-PUFM-X4

Manufacturer :

IXYS

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Tradename :

HiPerFET

FET Type :

N-Channel

Rise Time :

170ns

Product :

Power MOSFET Modules

Mounting Type :

Chassis Mount

Input Capacitance (Ciss) (Max) @ Vds :

45000pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

GigaMOS™

Lead Free :

Lead Free

Package :

Tube

Terminal Form :

UNSPECIFIED

Pulsed Drain Current-Max (IDM) :

800A

Product Type :

Discrete Semiconductor Modules

Factory Lead Time :

30 Weeks

Turn On Delay Time :

46 ns

Input Capacitance :

45 nF

Mounting Style :

Screw Mounts

Output Voltage :

170V

Rds On Max :

5.2 mΩ

Vgs(th) (Max) @ Id :

5V @ 8mA

Operating Temperature :

-55°C~175°C TJ

Qualification Status :

Not Qualified

Avalanche Energy Rating (Eas) :

5000 mJ

Output Current :

260A

FET Feature :

--

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Nickel

Transistor Element Material :

SILICON

Power Dissipation-Max :

1070W Tc

Element Configuration :

Single

Product Status :

Active

Nominal Supply Current :

100A

Pin Count :

4

Number of Elements :

1

Configuration :

Single

Case Connection :

Isolated

Transistor Polarity :

N-Channel

Minimum Operating Temperature :

- 55 C

Mount :

Chassis Mount

Number of Outputs :

1

Gate to Source Voltage (Vgs) :

20V

Additional Feature :

UL RECOGNIZED