IXFN30N120P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

2000 mJ

RoHS :

Details

Fall Time (Typ) :

56 ns

FET Feature :

--

Package Shape :

RECTANGULAR

JESD-30 Code :

R-PUFM-X4

Power Dissipation (Max) :

890W (Tc)

Product Category :

Discrete Semiconductor Modules

Drain to Source Voltage (Vdss) :

1200V

Number of Elements :

1

Mounting Type :

Chassis Mount

Gate Charge (Qg) (Max) @ Vgs :

310nC @ 10V

Number of Pins :

4

Pbfree Code :

yes

Pin Count :

4

Turn-Off Delay Time :

95 ns

Maximum Operating Temperature :

+ 150 C

Continuous Drain Current (ID) :

30A

Operating Mode :

ENHANCEMENT MODE

Polarity/Channel Type :

N-Channel

Drain-source On Resistance-Max :

0.35Ohm

Terminal Position :

UPPER

Published :

2008

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

No

Factory Lead Time :

30 Weeks

Product Type :

Discrete Semiconductor Modules

Mount :

Chassis Mount

Number of Terminations :

4

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Manufacturer :

IXYS

Rds On (Max) @ Id, Vgs :

350m Ω @ 500mA, 10V

RoHS Status :

ROHS3 Compliant

Additional Feature :

UL RECOGNIZED, AVALANCHE RATED

Transistor Element Material :

SILICON

Brand :

IXYS

Package / Case :

SOT-227-4, miniBLOC

Vgs (Max) :

±30V

Rise Time :

60ns

Length :

38.23 mm

Height :

9.6 mm

Power Dissipation-Max (Abs) :

890 W

Reach Compliance Code :

Compliant

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

19000pF @ 25V

Drain Current-Max (Abs) (ID) :

30 A

Qualification Status :

Not Qualified

Series :

Polar™

Package :

Tube

DS Breakdown Voltage-Min :

1200 V

Product Status :

Active

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Case Connection :

Isolated

Pulsed Drain Current-Max (IDM) :

75A

Packaging :

Tube

Power Dissipation :

890W

Transistor Polarity :

N-Channel

Number of Channels :

1 Channel

Drain to Source Breakdown Voltage :

1.2kV

Supplier Device Package :

SOT-227B

Mounting Style :

Chassis Mount

Power Dissipation-Max :

890W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Nickel (Ni)

Tradename :

HiPerFET

Gate to Source Voltage (Vgs) :

30V

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

UNSPECIFIED

Transistor Application :

SWITCHING

Width :

25.42 mm

Minimum Operating Temperature :

- 55 C

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Base Product Number :

IXFN30

Number of Terminals :

4

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)