IXFN30N120P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package Shape :

RECTANGULAR

Mounting Style :

Chassis Mount

Rds On (Max) @ Id, Vgs :

350m Ω @ 500mA, 10V

Power Dissipation-Max (Abs) :

890 W

Drain to Source Voltage (Vdss) :

1200V

Number of Channels :

1 Channel

Additional Feature :

UL RECOGNIZED, AVALANCHE RATED

Polarity/Channel Type :

N-Channel

Brand :

IXYS

Avalanche Energy Rating (Eas) :

2000 mJ

Input Capacitance (Ciss) (Max) @ Vds :

19000pF @ 25V

Terminal Position :

UPPER

Package :

Tube

JESD-30 Code :

R-PUFM-X4

Gate Charge (Qg) (Max) @ Vgs :

310nC @ 10V

Number of Terminals :

4

Gate to Source Voltage (Vgs) :

30V

Drain-source On Resistance-Max :

0.35Ohm

Manufacturer :

IXYS

Pin Count :

4

Series :

Polar™

DS Breakdown Voltage-Min :

1200 V

FET Type :

N-Channel

Height :

9.6 mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

Compliant

Number of Elements :

1

Terminal Form :

UNSPECIFIED

Number of Pins :

4

Terminal Finish :

Nickel (Ni)

Number of Terminations :

4

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Feature :

--

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Factory Lead Time :

30 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±30V

Published :

2008

Tradename :

HiPerFET

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Product Status :

Active

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Transistor Element Material :

SILICON

Packaging :

Tube

Transistor Polarity :

N-Channel

Drain to Source Breakdown Voltage :

1.2kV

Turn-Off Delay Time :

95 ns

Pulsed Drain Current-Max (IDM) :

75A

Base Product Number :

IXFN30

Power Dissipation-Max :

890W Tc

Length :

38.23 mm

Case Connection :

Isolated

Pbfree Code :

yes

Fall Time (Typ) :

56 ns

Mounting Type :

Chassis Mount

RoHS Status :

ROHS3 Compliant

Maximum Operating Temperature :

+ 150 C

Qualification Status :

Not Qualified

Continuous Drain Current (ID) :

30A

Surface Mount :

No

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation :

890W

Package / Case :

SOT-227-4, miniBLOC

Product Type :

Discrete Semiconductor Modules

Minimum Operating Temperature :

- 55 C

Drain Current-Max (Abs) (ID) :

30 A

Power Dissipation (Max) :

890W (Tc)

Mount :

Chassis Mount

Width :

25.42 mm

Rise Time :

60ns

Supplier Device Package :

SOT-227B

Transistor Application :

SWITCHING

Product Category :

Discrete Semiconductor Modules

Operating Temperature :

-55°C~150°C TJ

RoHS :

Details