IXFN300N10P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

279nC @ 10V

JESD-30 Code :

R-PUFM-X4

Current - Continuous Drain (Id) @ 25°C :

295A Tc

Base Product Number :

IXFN300

Avalanche Energy Rating (Eas) :

3000 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

4

Number of Channels :

1 Channel

Terminal Finish :

Nickel (Ni)

DS Breakdown Voltage-Min :

100V

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

23000pF @ 25V

Minimum Operating Temperature :

- 55 C

Product Type :

Discrete Semiconductor Modules

Mount :

Chassis Mount

Power Dissipation (Max) :

1070W (Tc)

Product Category :

Discrete Semiconductor Modules

Polarity/Channel Type :

N-Channel

Surface Mount :

No

Drain to Source Voltage (Vdss) :

100V

Drain Current-Max (Abs) (ID) :

295 A

Packaging :

Tube

Drain-source On Resistance-Max :

0.0055Ohm

Width :

25.42 mm

Product :

Power MOSFET Modules

Package / Case :

SOT-227-4, miniBLOC

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 50A, 10V

Factory Lead Time :

30 Weeks

Supplier Device Package :

SOT-227B

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

900A

Power Dissipation-Max (Abs) :

1070 W

Product Status :

Active

Mounting Style :

Screw Mounts

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Chassis Mount

Terminal Position :

UPPER

Transistor Element Material :

SILICON

Manufacturer :

IXYS

Published :

2008

ECCN Code :

EAR99

Length :

38.23 mm

Tradename :

HiPerFET

FET Type :

N-Channel

Package Shape :

RECTANGULAR

Case Connection :

Isolated

Max Power Dissipation :

1.07 kW

Series :

Polar™

Min Operating Temperature :

-55 °C

Transistor Polarity :

N-Channel

Continuous Drain Current (ID) :

295A

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Power Dissipation-Max :

1070W Tc

Number of Elements :

1

Vgs(th) (Max) @ Id :

5V @ 8mA

Number of Terminals :

4

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

Rds On Max :

5.5 mΩ

Vgs (Max) :

±20V

Qualification Status :

Not Qualified

Rise Time :

35 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Reach Compliance Code :

Compliant

Max Operating Temperature :

175 °C

FET Feature :

--

Height :

12.22 mm

Number of Terminations :

4

Input Capacitance :

23 nF

Configuration :

SINGLE WITH BUILT-IN DIODE

Type :

Polar Power MOSFET HiPerFET

Terminal Form :

UNSPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Brand :

IXYS

RoHS :

Details

Maximum Operating Temperature :

+ 175 C

Package :

Tube

Operating Temperature :

-55°C~175°C TJ