IXFN280N085
- Mfr.Part #
- IXFN280N085
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 85V 280A SOT-227B
- Stock
- 4,904
- In Stock :
- 4,904
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Radiation Hardening :
- No
- Number of Channels :
- 1 Channel
- Pbfree Code :
- yes
- Length :
- 38.23 mm
- Reach Compliance Code :
- Compliant
- Qualification Status :
- Not Qualified
- DS Breakdown Voltage-Min :
- 85 V
- Vgs(th) (Max) @ Id :
- 4V @ 8mA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Product Status :
- Not For New Designs
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- Isolated
- Published :
- 2008
- Power Dissipation (Max) :
- 700W (Tc)
- Surface Mount :
- No
- ECCN Code :
- EAR99
- FET Feature :
- --
- Terminal Finish :
- Nickel (Ni)
- Drain-source On Resistance-Max :
- 0.0044 Ω
- Number of Terminals :
- 4
- Minimum Operating Temperature :
- - 55 C
- Maximum Operating Temperature :
- + 150 C
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package Shape :
- RECTANGULAR
- Operating Mode :
- ENHANCEMENT MODE
- Drain Current-Max (Abs) (ID) :
- 280 A
- Power Dissipation :
- 700W
- Pin Count :
- 4
- Package :
- Tube
- Product :
- Power MOSFET Modules
- Mount :
- Chassis Mount, Screw
- Number of Terminations :
- 4
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 4.4m Ω @ 100A, 10V
- RoHS Status :
- RoHS Compliant
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mounting Style :
- Chassis Mount
- Factory Lead Time :
- 8 Weeks
- Avalanche Energy Rating (Eas) :
- 4000 mJ
- Product Category :
- Discrete Semiconductor Modules
- Product Type :
- Discrete Semiconductor Modules
- Transistor Polarity :
- N-Channel
- Terminal Form :
- UNSPECIFIED
- Number of Elements :
- 1
- Base Product Number :
- IXFN280
- Drain to Source Voltage (Vdss) :
- 85V
- Turn-Off Delay Time :
- 200 ns
- Package / Case :
- SOT-227-4, miniBLOC
- Vgs (Max) :
- ±20V
- Brand :
- IXYS
- Manufacturer :
- IXYS
- Supplier Device Package :
- SOT-227B
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 85V
- Pulsed Drain Current-Max (IDM) :
- 1120 A
- Series :
- HiPerFET™
- Resistance :
- 390mOhm
- Rise Time :
- 95ns
- Width :
- 25.42 mm
- Lead Free :
- Lead Free
- Number of Pins :
- 4
- Input Capacitance (Ciss) (Max) @ Vds :
- 19000pF @ 25V
- RoHS :
- Details
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Power Dissipation-Max (Abs) :
- 700 W
- Fall Time (Typ) :
- 33 ns
- Continuous Drain Current (ID) :
- 280A
- Power Dissipation-Max :
- 700W Tc
- JESD-30 Code :
- R-PUFM-X4
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- UPPER
- Height :
- 9.6 mm
- Mounting Type :
- Chassis Mount
- Tradename :
- HyperFET
- Current - Continuous Drain (Id) @ 25°C :
- 280A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 580nC @ 10V
- Datasheets
- IXFN280N085
IXFN280N085 Documents

N-Channel Tube 4.4m Ω @ 100A, 10V ±20V 19000pF @ 25V 580nC @ 10V 85V SOT-227-4, miniBLOC
IXFN280N085 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 4000 mJ.A device's maximal input capacitance is 19000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 280A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 85V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 280 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 200 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 1120 A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 85 V.This transistor requires a 85V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFN280N085 Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 280A
a drain-to-source breakdown voltage of 85V voltage
the turn-off delay time is 200 ns
based on its rated peak drain current 1120 A.
a 85V drain to source voltage (Vdss)
IXFN280N085 Applications
There are a lot of IXYS
IXFN280N085 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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