IXFN280N085

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Mfr.Part #
IXFN280N085
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 85V 280A SOT-227B
Stock
4,904
In Stock :
4,904

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Breakdown Voltage :
85V
Vgs (Max) :
±20V
Series :
HiPerFET™
ECCN Code :
EAR99
Fall Time (Typ) :
33 ns
Operating Temperature :
-55°C~150°C TJ
Product Category :
Discrete Semiconductor Modules
Power Dissipation :
700W
Drive Voltage (Max Rds On,Min Rds On) :
10V
Case Connection :
Isolated
Number of Terminals :
4
Current - Continuous Drain (Id) @ 25°C :
280A Tc
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mounting Type :
Chassis Mount
Packaging :
Tube
Pulsed Drain Current-Max (IDM) :
1120 A
Width :
25.42 mm
Power Dissipation-Max (Abs) :
700 W
Configuration :
SINGLE WITH BUILT-IN DIODE
Reach Compliance Code :
Compliant
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Polarity/Channel Type :
N-Channel
Length :
38.23 mm
Terminal Position :
UPPER
Input Capacitance (Ciss) (Max) @ Vds :
19000pF @ 25V
Qualification Status :
Not Qualified
RoHS Status :
RoHS Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Avalanche Energy Rating (Eas) :
4000 mJ
Height :
9.6 mm
Terminal Form :
UNSPECIFIED
Product Status :
Not For New Designs
Rds On (Max) @ Id, Vgs :
4.4m Ω @ 100A, 10V
Pin Count :
4
DS Breakdown Voltage-Min :
85 V
Drain to Source Voltage (Vdss) :
85V
Vgs(th) (Max) @ Id :
4V @ 8mA
Mounting Style :
Chassis Mount
Turn-Off Delay Time :
200 ns
Number of Terminations :
4
Power Dissipation (Max) :
700W (Tc)
Mount :
Chassis Mount, Screw
Gate Charge (Qg) (Max) @ Vgs :
580nC @ 10V
Product Type :
Discrete Semiconductor Modules
Factory Lead Time :
8 Weeks
Brand :
IXYS
Package :
Tube
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
Drain Current-Max (Abs) (ID) :
280 A
Pbfree Code :
yes
Operating Mode :
ENHANCEMENT MODE
Package Shape :
RECTANGULAR
JESD-30 Code :
R-PUFM-X4
RoHS :
Details
Transistor Polarity :
N-Channel
Tradename :
HyperFET
Drain-source On Resistance-Max :
0.0044 Ω
Published :
2008
Base Product Number :
IXFN280
Supplier Device Package :
SOT-227B
Continuous Drain Current (ID) :
280A
Resistance :
390mOhm
Number of Channels :
1 Channel
Gate to Source Voltage (Vgs) :
20V
FET Feature :
--
Terminal Finish :
Nickel (Ni)
Package / Case :
SOT-227-4, miniBLOC
Product :
Power MOSFET Modules
Radiation Hardening :
No
Rise Time :
95ns
Number of Elements :
1
Power Dissipation-Max :
700W Tc
Transistor Application :
SWITCHING
Minimum Operating Temperature :
- 55 C
Maximum Operating Temperature :
+ 150 C
Lead Free :
Lead Free
Surface Mount :
No
Transistor Element Material :
SILICON
FET Type :
N-Channel
Manufacturer :
IXYS
Number of Pins :
4
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFN280N085 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Chassis Mount, Number of Terminations:4, Number of Channels:1 Channel, Package / Case:SOT-227-4, miniBLOC, Number of Pins:4, IXFN280N085 pinout, IXFN280N085 datasheet PDF, IXFN280N085 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFN280N085 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFN280N085


N-Channel Tube 4.4m Ω @ 100A, 10V ±20V 19000pF @ 25V 580nC @ 10V 85V SOT-227-4, miniBLOC

IXFN280N085 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 4000 mJ.A device's maximal input capacitance is 19000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 280A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 85V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 280 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 200 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 1120 A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 85 V.This transistor requires a 85V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFN280N085 Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 280A
a drain-to-source breakdown voltage of 85V voltage
the turn-off delay time is 200 ns
based on its rated peak drain current 1120 A.
a 85V drain to source voltage (Vdss)


IXFN280N085 Applications


There are a lot of IXYS
IXFN280N085 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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