IXFN280N085

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Mfr.Part #
IXFN280N085
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 85V 280A SOT-227B
Stock
4,904
In Stock :
4,904

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Element Material :
SILICON
Polarity/Channel Type :
N-Channel
Gate to Source Voltage (Vgs) :
20V
Radiation Hardening :
No
Number of Channels :
1 Channel
Pbfree Code :
yes
Length :
38.23 mm
Reach Compliance Code :
Compliant
Qualification Status :
Not Qualified
DS Breakdown Voltage-Min :
85 V
Vgs(th) (Max) @ Id :
4V @ 8mA
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Product Status :
Not For New Designs
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Case Connection :
Isolated
Published :
2008
Power Dissipation (Max) :
700W (Tc)
Surface Mount :
No
ECCN Code :
EAR99
FET Feature :
--
Terminal Finish :
Nickel (Ni)
Drain-source On Resistance-Max :
0.0044 Ω
Number of Terminals :
4
Minimum Operating Temperature :
- 55 C
Maximum Operating Temperature :
+ 150 C
Packaging :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package Shape :
RECTANGULAR
Operating Mode :
ENHANCEMENT MODE
Drain Current-Max (Abs) (ID) :
280 A
Power Dissipation :
700W
Pin Count :
4
Package :
Tube
Product :
Power MOSFET Modules
Mount :
Chassis Mount, Screw
Number of Terminations :
4
Transistor Application :
SWITCHING
Rds On (Max) @ Id, Vgs :
4.4m Ω @ 100A, 10V
RoHS Status :
RoHS Compliant
Configuration :
SINGLE WITH BUILT-IN DIODE
Mounting Style :
Chassis Mount
Factory Lead Time :
8 Weeks
Avalanche Energy Rating (Eas) :
4000 mJ
Product Category :
Discrete Semiconductor Modules
Product Type :
Discrete Semiconductor Modules
Transistor Polarity :
N-Channel
Terminal Form :
UNSPECIFIED
Number of Elements :
1
Base Product Number :
IXFN280
Drain to Source Voltage (Vdss) :
85V
Turn-Off Delay Time :
200 ns
Package / Case :
SOT-227-4, miniBLOC
Vgs (Max) :
±20V
Brand :
IXYS
Manufacturer :
IXYS
Supplier Device Package :
SOT-227B
FET Type :
N-Channel
Drain to Source Breakdown Voltage :
85V
Pulsed Drain Current-Max (IDM) :
1120 A
Series :
HiPerFET™
Resistance :
390mOhm
Rise Time :
95ns
Width :
25.42 mm
Lead Free :
Lead Free
Number of Pins :
4
Input Capacitance (Ciss) (Max) @ Vds :
19000pF @ 25V
RoHS :
Details
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
Power Dissipation-Max (Abs) :
700 W
Fall Time (Typ) :
33 ns
Continuous Drain Current (ID) :
280A
Power Dissipation-Max :
700W Tc
JESD-30 Code :
R-PUFM-X4
Operating Temperature :
-55°C~150°C TJ
Terminal Position :
UPPER
Height :
9.6 mm
Mounting Type :
Chassis Mount
Tradename :
HyperFET
Current - Continuous Drain (Id) @ 25°C :
280A Tc
Gate Charge (Qg) (Max) @ Vgs :
580nC @ 10V
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFN280N085 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Number of Terminations:4, Package / Case:SOT-227-4, miniBLOC, Number of Pins:4, Operating Temperature:-55°C~150°C TJ, Mounting Type:Chassis Mount, IXFN280N085 pinout, IXFN280N085 datasheet PDF, IXFN280N085 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFN280N085 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFN280N085


N-Channel Tube 4.4m Ω @ 100A, 10V ±20V 19000pF @ 25V 580nC @ 10V 85V SOT-227-4, miniBLOC

IXFN280N085 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 4000 mJ.A device's maximal input capacitance is 19000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 280A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 85V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 280 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 200 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 1120 A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 85 V.This transistor requires a 85V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFN280N085 Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 280A
a drain-to-source breakdown voltage of 85V voltage
the turn-off delay time is 200 ns
based on its rated peak drain current 1120 A.
a 85V drain to source voltage (Vdss)


IXFN280N085 Applications


There are a lot of IXYS
IXFN280N085 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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