IXFN280N085
- Mfr.Part #
- IXFN280N085
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 85V 280A SOT-227B
- Stock
- 4,904
- In Stock :
- 4,904
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Breakdown Voltage :
- 85V
- Vgs (Max) :
- ±20V
- Series :
- HiPerFET™
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 33 ns
- Operating Temperature :
- -55°C~150°C TJ
- Product Category :
- Discrete Semiconductor Modules
- Power Dissipation :
- 700W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Case Connection :
- Isolated
- Number of Terminals :
- 4
- Current - Continuous Drain (Id) @ 25°C :
- 280A Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Chassis Mount
- Packaging :
- Tube
- Pulsed Drain Current-Max (IDM) :
- 1120 A
- Width :
- 25.42 mm
- Power Dissipation-Max (Abs) :
- 700 W
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Reach Compliance Code :
- Compliant
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Polarity/Channel Type :
- N-Channel
- Length :
- 38.23 mm
- Terminal Position :
- UPPER
- Input Capacitance (Ciss) (Max) @ Vds :
- 19000pF @ 25V
- Qualification Status :
- Not Qualified
- RoHS Status :
- RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Avalanche Energy Rating (Eas) :
- 4000 mJ
- Height :
- 9.6 mm
- Terminal Form :
- UNSPECIFIED
- Product Status :
- Not For New Designs
- Rds On (Max) @ Id, Vgs :
- 4.4m Ω @ 100A, 10V
- Pin Count :
- 4
- DS Breakdown Voltage-Min :
- 85 V
- Drain to Source Voltage (Vdss) :
- 85V
- Vgs(th) (Max) @ Id :
- 4V @ 8mA
- Mounting Style :
- Chassis Mount
- Turn-Off Delay Time :
- 200 ns
- Number of Terminations :
- 4
- Power Dissipation (Max) :
- 700W (Tc)
- Mount :
- Chassis Mount, Screw
- Gate Charge (Qg) (Max) @ Vgs :
- 580nC @ 10V
- Product Type :
- Discrete Semiconductor Modules
- Factory Lead Time :
- 8 Weeks
- Brand :
- IXYS
- Package :
- Tube
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Drain Current-Max (Abs) (ID) :
- 280 A
- Pbfree Code :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Package Shape :
- RECTANGULAR
- JESD-30 Code :
- R-PUFM-X4
- RoHS :
- Details
- Transistor Polarity :
- N-Channel
- Tradename :
- HyperFET
- Drain-source On Resistance-Max :
- 0.0044 Ω
- Published :
- 2008
- Base Product Number :
- IXFN280
- Supplier Device Package :
- SOT-227B
- Continuous Drain Current (ID) :
- 280A
- Resistance :
- 390mOhm
- Number of Channels :
- 1 Channel
- Gate to Source Voltage (Vgs) :
- 20V
- FET Feature :
- --
- Terminal Finish :
- Nickel (Ni)
- Package / Case :
- SOT-227-4, miniBLOC
- Product :
- Power MOSFET Modules
- Radiation Hardening :
- No
- Rise Time :
- 95ns
- Number of Elements :
- 1
- Power Dissipation-Max :
- 700W Tc
- Transistor Application :
- SWITCHING
- Minimum Operating Temperature :
- - 55 C
- Maximum Operating Temperature :
- + 150 C
- Lead Free :
- Lead Free
- Surface Mount :
- No
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Manufacturer :
- IXYS
- Number of Pins :
- 4
- Datasheets
- IXFN280N085
IXFN280N085 Documents

N-Channel Tube 4.4m Ω @ 100A, 10V ±20V 19000pF @ 25V 580nC @ 10V 85V SOT-227-4, miniBLOC
IXFN280N085 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 4000 mJ.A device's maximal input capacitance is 19000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 280A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 85V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 280 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 200 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 1120 A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 85 V.This transistor requires a 85V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFN280N085 Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 280A
a drain-to-source breakdown voltage of 85V voltage
the turn-off delay time is 200 ns
based on its rated peak drain current 1120 A.
a 85V drain to source voltage (Vdss)
IXFN280N085 Applications
There are a lot of IXYS
IXFN280N085 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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