IXFN280N085

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

580nC @ 10V

Mounting Style :

Chassis Mount

Number of Channels :

1 Channel

Power Dissipation (Max) :

700W (Tc)

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Lead Free

Case Connection :

Isolated

Drain Current-Max (Abs) (ID) :

280 A

Package Shape :

RECTANGULAR

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

19000pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 8mA

Manufacturer :

IXYS

Pulsed Drain Current-Max (IDM) :

1120 A

Fall Time (Typ) :

33 ns

Turn-Off Delay Time :

200 ns

RoHS Status :

RoHS Compliant

Packaging :

Tube

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

85V

Avalanche Energy Rating (Eas) :

4000 mJ

Power Dissipation-Max (Abs) :

700 W

Series :

HiPerFET™

Brand :

IXYS

Resistance :

390mOhm

Height :

9.6 mm

Rds On (Max) @ Id, Vgs :

4.4m Ω @ 100A, 10V

Package / Case :

SOT-227-4, miniBLOC

Number of Pins :

4

Number of Terminations :

4

Terminal Position :

UPPER

ECCN Code :

EAR99

Width :

25.42 mm

Base Product Number :

IXFN280

Product :

Power MOSFET Modules

Transistor Polarity :

N-Channel

Terminal Finish :

Nickel (Ni)

Product Type :

Discrete Semiconductor Modules

Package :

Tube

Tradename :

HyperFET

DS Breakdown Voltage-Min :

85 V

Rise Time :

95ns

Terminal Form :

UNSPECIFIED

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PUFM-X4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current (ID) :

280A

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

280A Tc

Power Dissipation :

700W

Polarity/Channel Type :

N-Channel

Transistor Application :

SWITCHING

Length :

38.23 mm

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Maximum Operating Temperature :

+ 150 C

Number of Terminals :

4

Minimum Operating Temperature :

- 55 C

Product Status :

Not For New Designs

Vgs (Max) :

±20V

Power Dissipation-Max :

700W Tc

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.0044 Ω

Radiation Hardening :

No

Mounting Type :

Chassis Mount

Reach Compliance Code :

Compliant

Number of Elements :

1

Pin Count :

4

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Feature :

--

Published :

2008

Product Category :

Discrete Semiconductor Modules

RoHS :

Details

Surface Mount :

No

Drain to Source Voltage (Vdss) :

85V

Mount :

Chassis Mount, Screw

Supplier Device Package :

SOT-227B

FET Type :

N-Channel

Factory Lead Time :

8 Weeks