IXFN280N07
- Mfr.Part #
- IXFN280N07
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 70V 280A SOT-227B
- Stock
- 22,803
- In Stock :
- 22,803
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS :
- Details
- Mount :
- Chassis Mount
- Fall Time (Typ) :
- 50 ns
- Number of Pins :
- 4
- Supplier Device Package :
- SOT-227B
- Number of Terminals :
- 4
- Terminal Form :
- UNSPECIFIED
- Turn-Off Delay Time :
- 85 ns
- Rise Time :
- 90ns
- Surface Mount :
- No
- Product Status :
- Not For New Designs
- Published :
- 2007
- Width :
- 25.07 mm
- Minimum Operating Temperature :
- - 55 C
- Number of Channels :
- 1 Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Tradename :
- HyperFET
- Product :
- Power MOSFET Modules
- Power Dissipation-Max :
- 600W Tc
- Drain to Source Voltage (Vdss) :
- 70V
- Pin Count :
- 4
- Number of Terminations :
- 4
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Type :
- Chassis Mount
- Package / Case :
- SOT-227-4, miniBLOC
- Reach Compliance Code :
- Compliant
- Brand :
- IXYS
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Manufacturer :
- IXYS
- ECCN Code :
- EAR99
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- FET Feature :
- --
- Vgs(th) (Max) @ Id :
- 4V @ 8mA
- Series :
- HiPerFET™
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 280A Tc
- Pbfree Code :
- yes
- Package Shape :
- RECTANGULAR
- Transistor Polarity :
- N-Channel
- Continuous Drain Current (ID) :
- 280A
- Input Capacitance (Ciss) (Max) @ Vds :
- 9400pF @ 25V
- Drain to Source Breakdown Voltage :
- 70V
- Operating Mode :
- ENHANCEMENT MODE
- Product Type :
- Discrete Semiconductor Modules
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Style :
- Chassis Mount
- Product Category :
- Discrete Semiconductor Modules
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 420nC @ 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max (Abs) :
- 600 W
- Power Dissipation (Max) :
- 600W (Tc)
- Terminal Finish :
- Nickel (Ni)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- RoHS Compliant
- Length :
- 38.2 mm
- JESD-30 Code :
- R-PUFM-X4
- Terminal Position :
- UPPER
- Package :
- Tube
- DS Breakdown Voltage-Min :
- 70 V
- Transistor Application :
- SWITCHING
- Maximum Operating Temperature :
- + 150 C
- Polarity/Channel Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.005ohm
- Qualification Status :
- Not Qualified
- Base Product Number :
- IXFN280
- Rds On (Max) @ Id, Vgs :
- 5m Ω @ 120A, 10V
- Height :
- 9.6 mm
- Drain Current-Max (Abs) (ID) :
- 280 A
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Pulsed Drain Current-Max (IDM) :
- 1120A
- Case Connection :
- Isolated
- Power Dissipation :
- 600W
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- IXFN280N07

N-Channel Tube 5m Ω @ 120A, 10V ±20V 9400pF @ 25V 420nC @ 10V 70V SOT-227-4, miniBLOC
IXFN280N07 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 9400pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 280A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=70V. And this device has 70V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 280 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 85 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 1120A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 70 V in order to maintain normal operation.Operating this transistor requires a 70V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFN280N07 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 280A
a drain-to-source breakdown voltage of 70V voltage
the turn-off delay time is 85 ns
based on its rated peak drain current 1120A.
a 70V drain to source voltage (Vdss)
IXFN280N07 Applications
There are a lot of IXYS
IXFN280N07 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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