IXFN280N07

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

Isolated

Power Dissipation :

600W

Package :

Tube

Pin Count :

4

Number of Channels :

1 Channel

Input Capacitance (Ciss) (Max) @ Vds :

9400pF @ 25V

RoHS :

Details

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.005ohm

Rise Time :

90ns

Terminal Form :

UNSPECIFIED

Published :

2007

Configuration :

SINGLE WITH BUILT-IN DIODE

Package Shape :

RECTANGULAR

Length :

38.2 mm

Number of Elements :

1

Surface Mount :

No

Manufacturer :

IXYS

Transistor Element Material :

SILICON

Width :

25.07 mm

Mounting Style :

Chassis Mount

Power Dissipation-Max :

600W Tc

Transistor Application :

SWITCHING

Brand :

IXYS

Number of Terminations :

4

Avalanche Energy Rating (Eas) :

3000 mJ

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

4V @ 8mA

DS Breakdown Voltage-Min :

70 V

Power Dissipation (Max) :

600W (Tc)

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

70V

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Current - Continuous Drain (Id) @ 25°C :

280A Tc

Turn-Off Delay Time :

85 ns

Continuous Drain Current (ID) :

280A

Product :

Power MOSFET Modules

Terminal Finish :

Nickel (Ni)

Product Type :

Discrete Semiconductor Modules

Drain Current-Max (Abs) (ID) :

280 A

Mount :

Chassis Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminals :

4

Packaging :

Tube

Maximum Operating Temperature :

+ 150 C

Rds On (Max) @ Id, Vgs :

5m Ω @ 120A, 10V

Mounting Type :

Chassis Mount

Base Product Number :

IXFN280

RoHS Status :

RoHS Compliant

FET Feature :

--

Terminal Position :

UPPER

Gate Charge (Qg) (Max) @ Vgs :

420nC @ 10V

Number of Pins :

4

Tradename :

HyperFET

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Polarity/Channel Type :

N-Channel

Minimum Operating Temperature :

- 55 C

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Breakdown Voltage :

70V

Reach Compliance Code :

Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max (Abs) :

600 W

Transistor Polarity :

N-Channel

Product Category :

Discrete Semiconductor Modules

Vgs (Max) :

±20V

JESD-30 Code :

R-PUFM-X4

Fall Time (Typ) :

50 ns

Supplier Device Package :

SOT-227B

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

1120A

Product Status :

Not For New Designs

Series :

HiPerFET™

Height :

9.6 mm

Package / Case :

SOT-227-4, miniBLOC