IXFN280N07

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Mfr.Part #
IXFN280N07
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 70V 280A SOT-227B
Stock
22,803
In Stock :
22,803

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Gate Charge (Qg) (Max) @ Vgs :
420nC @ 10V
Drain to Source Voltage (Vdss) :
70V
Brand :
IXYS
Height :
9.6 mm
Polarity/Channel Type :
N-Channel
Power Dissipation (Max) :
600W (Tc)
Drain-source On Resistance-Max :
0.005ohm
Package :
Tube
Power Dissipation :
600W
Qualification Status :
Not Qualified
Drive Voltage (Max Rds On,Min Rds On) :
10V
Minimum Operating Temperature :
- 55 C
Product Status :
Not For New Designs
Tradename :
HyperFET
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Pins :
4
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Terminals :
4
Width :
25.07 mm
Product :
Power MOSFET Modules
Continuous Drain Current (ID) :
280A
Transistor Application :
SWITCHING
Supplier Device Package :
SOT-227B
Fall Time (Typ) :
50 ns
RoHS :
Details
Maximum Operating Temperature :
+ 150 C
Input Capacitance (Ciss) (Max) @ Vds :
9400pF @ 25V
Case Connection :
Isolated
Operating Temperature :
-55°C~150°C TJ
DS Breakdown Voltage-Min :
70 V
Terminal Finish :
Nickel (Ni)
JESD-30 Code :
R-PUFM-X4
Surface Mount :
No
Terminal Position :
UPPER
Operating Mode :
ENHANCEMENT MODE
Pulsed Drain Current-Max (IDM) :
1120A
Packaging :
Tube
Published :
2007
Mounting Style :
Chassis Mount
Length :
38.2 mm
Drain to Source Breakdown Voltage :
70V
Transistor Polarity :
N-Channel
Avalanche Energy Rating (Eas) :
3000 mJ
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Series :
HiPerFET™
Vgs(th) (Max) @ Id :
4V @ 8mA
Mounting Type :
Chassis Mount
Vgs (Max) :
±20V
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
Terminal Form :
UNSPECIFIED
Mount :
Chassis Mount
Number of Elements :
1
Power Dissipation-Max :
600W Tc
ECCN Code :
EAR99
Pin Count :
4
Package Shape :
RECTANGULAR
Reach Compliance Code :
Compliant
Gate to Source Voltage (Vgs) :
20V
Product Category :
Discrete Semiconductor Modules
Number of Channels :
1 Channel
FET Type :
N-Channel
Manufacturer :
IXYS
Pbfree Code :
yes
FET Feature :
--
Turn-Off Delay Time :
85 ns
Configuration :
SINGLE WITH BUILT-IN DIODE
Drain Current-Max (Abs) (ID) :
280 A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max (Abs) :
600 W
RoHS Status :
RoHS Compliant
Package / Case :
SOT-227-4, miniBLOC
Rise Time :
90ns
Number of Terminations :
4
Transistor Element Material :
SILICON
Product Type :
Discrete Semiconductor Modules
Rds On (Max) @ Id, Vgs :
5m Ω @ 120A, 10V
Base Product Number :
IXFN280
Current - Continuous Drain (Id) @ 25°C :
280A Tc
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFN280N07 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:4, Operating Temperature:-55°C~150°C TJ, Mounting Type:Chassis Mount, Number of Channels:1 Channel, Package / Case:SOT-227-4, miniBLOC, Number of Terminations:4, IXFN280N07 pinout, IXFN280N07 datasheet PDF, IXFN280N07 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFN280N07 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFN280N07


N-Channel Tube 5m Ω @ 120A, 10V ±20V 9400pF @ 25V 420nC @ 10V 70V SOT-227-4, miniBLOC

IXFN280N07 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 9400pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 280A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=70V. And this device has 70V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 280 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 85 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 1120A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 70 V in order to maintain normal operation.Operating this transistor requires a 70V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFN280N07 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 280A
a drain-to-source breakdown voltage of 70V voltage
the turn-off delay time is 85 ns
based on its rated peak drain current 1120A.
a 70V drain to source voltage (Vdss)


IXFN280N07 Applications


There are a lot of IXYS
IXFN280N07 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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