IXFN27N80

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

800V

Input Capacitance (Ciss) (Max) @ Vds :

7600pF @ 25V

Mounting Type :

Chassis Mount

Threshold Voltage :

4.5V

Package / Case :

SOT-227-4, miniBLOC

Supplier Device Package :

SOT-227B

Power Dissipation-Max :

520W Tc

Mount :

Chassis Mount

Dual Supply Voltage :

800V

Polarity/Channel Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation :

520W

Number of Channels :

1 Channel

Surface Mount :

No

Nominal Vgs :

4.5 V

Reach Compliance Code :

Compliant

Product Category :

Discrete Semiconductor Modules

Terminal Form :

UNSPECIFIED

Gate to Source Voltage (Vgs) :

20V

Additional Feature :

AVALANCHE RATED

Terminal Position :

UPPER

Transistor Polarity :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Base Product Number :

IXFN27

Mounting Style :

Chassis Mount

Lead Free :

Lead Free

Product Type :

Discrete Semiconductor Modules

Brand :

IXYS

DS Breakdown Voltage-Min :

800 V

Pbfree Code :

yes

Packaging :

Tube

Package Shape :

RECTANGULAR

RoHS :

Details

Rds On (Max) @ Id, Vgs :

320m Ω @ 500mA, 10V

Minimum Operating Temperature :

- 55 C

ECCN Code :

EAR99

Power Dissipation (Max) :

520W (Tc)

Package :

Tube

Termination :

Screw

Width :

25.07 mm

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

800V

Height :

9.6 mm

Transistor Element Material :

SILICON

Channel Type :

N Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Subcategory :

Discrete Semiconductor Modules

JESD-30 Code :

R-PUFM-X4

Manufacturer :

IXYS

Product Status :

Active

FET Type :

N-Channel

Weight :

40g

Number of Pins :

4

Pulsed Drain Current-Max (IDM) :

108A

Number of Elements :

1

Length :

38.2 mm

Published :

2001

MSL :

-

Factory Lead Time :

30 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HiPerFET™

Rise Time :

28ns

Avalanche Energy Rating (Eas) :

2500 mJ

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Resistance :

320mOhm

Turn-Off Delay Time :

50 ns

Fall Time (Typ) :

13 ns

Isolation Voltage :

2.5kV

Case Connection :

DRAIN

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

4.5V @ 4mA

Current - Continuous Drain (Id) @ 25°C :

27A Tc

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminals :

4

Pin Count :

4

Product :

Power MOSFET Modules

Drain-source On Resistance-Max :

0.32 Ω

Qualification :

-

RoHS Status :

ROHS3 Compliant

Maximum Operating Temperature :

+ 150 C

Continuous Drain Current (ID) :

27A

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Tradename :

HiPerFET

Continuous Drain Current Id :

27A

FET Feature :

--

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

4

FET Technology :

METAL-OXIDE SEMICONDUCTOR