IXFN27N80

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

800V

Manufacturer :

IXYS

Height :

9.6 mm

Pbfree Code :

yes

Termination :

Screw

Subcategory :

Discrete Semiconductor Modules

Minimum Operating Temperature :

- 55 C

Factory Lead Time :

30 Weeks

Avalanche Energy Rating (Eas) :

2500 mJ

Transistor Element Material :

SILICON

Maximum Operating Temperature :

+ 150 C

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package :

Tube

Width :

25.07 mm

Supplier Device Package :

SOT-227B

Continuous Drain Current Id :

27A

Turn-Off Delay Time :

50 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

1

Drain-source On Resistance-Max :

0.32 Ω

Power Dissipation (Max) :

520W (Tc)

Pulsed Drain Current-Max (IDM) :

108A

Current - Continuous Drain (Id) @ 25°C :

27A Tc

Package Shape :

RECTANGULAR

Qualification Status :

Not Qualified

Terminal Form :

UNSPECIFIED

Polarity/Channel Type :

N-Channel

Product Status :

Active

Brand :

IXYS

Power Dissipation-Max :

520W Tc

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

Tradename :

HiPerFET

Terminal Position :

UPPER

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Continuous Drain Current (ID) :

27A

Power Dissipation :

520W

Dual Supply Voltage :

800V

Transistor Application :

SWITCHING

Base Product Number :

IXFN27

Threshold Voltage :

4.5V

Series :

HiPerFET™

Mounting Style :

Chassis Mount

Vgs (Max) :

±20V

JESD-30 Code :

R-PUFM-X4

FET Feature :

--

Published :

2001

Mounting Type :

Chassis Mount

Surface Mount :

No

Channel Type :

N Channel

Drain to Source Voltage (Vdss) :

800V

Case Connection :

DRAIN

Number of Channels :

1 Channel

RoHS Status :

ROHS3 Compliant

MSL :

-

Fall Time (Typ) :

13 ns

Number of Terminals :

4

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

RoHS :

Details

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

SOT-227-4, miniBLOC

Rds On (Max) @ Id, Vgs :

320m Ω @ 500mA, 10V

Product Category :

Discrete Semiconductor Modules

Vgs(th) (Max) @ Id :

4.5V @ 4mA

DS Breakdown Voltage-Min :

800 V

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

7600pF @ 25V

Product Type :

Discrete Semiconductor Modules

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Lead Free :

Lead Free

Rise Time :

28ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Isolation Voltage :

2.5kV

Qualification :

-

Nominal Vgs :

4.5 V

Pin Count :

4

Number of Terminations :

4

Transistor Polarity :

N-Channel

Length :

38.2 mm

Product :

Power MOSFET Modules

Mount :

Chassis Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

Compliant

Weight :

40g

Packaging :

Tube

Number of Pins :

4

Resistance :

320mOhm

Additional Feature :

AVALANCHE RATED