IXFN26N90
- Mfr.Part #
- IXFN26N90
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 26A SOT-227B
- Stock
- 42,049
- In Stock :
- 42,049
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Nominal Vgs :
- 5 V
- Tradename :
- HyperFET
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Terminal Finish :
- Nickel (Ni)
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 8 Weeks
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 104A
- Manufacturer :
- IXYS
- Termination :
- Screw
- Operating Temperature :
- -55°C~150°C TJ
- Product :
- Power MOSFET Modules
- Packaging :
- Tube
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Fall Time (Typ) :
- 24 ns
- Package :
- Tube
- Turn-Off Delay Time :
- 130 ns
- Current - Continuous Drain (Id) @ 25°C :
- 26A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- SOT-227-4, miniBLOC
- Mounting Type :
- Chassis Mount
- Number of Channels :
- 1 Channel
- Rds On (Max) @ Id, Vgs :
- 300m Ω @ 13A, 10V
- Height :
- 9.6 mm
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Minimum Operating Temperature :
- - 55 C
- Surface Mount :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 240nC @ 10V
- Power Dissipation-Max (Abs) :
- 600 W
- Transistor Polarity :
- N-Channel
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 900V
- Number of Terminals :
- 4
- Reach Compliance Code :
- Compliant
- Product Type :
- Discrete Semiconductor Modules
- Polarity/Channel Type :
- N-Channel
- Brand :
- IXYS
- Product Status :
- Not For New Designs
- Threshold Voltage :
- 5V
- Weight :
- 44g
- FET Feature :
- --
- Qualification Status :
- Not Qualified
- Mounting Style :
- Chassis Mount
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Drain to Source Voltage (Vdss) :
- 900V
- Maximum Operating Temperature :
- + 150 C
- Published :
- 2000
- Case Connection :
- Isolated
- Pin Count :
- 4
- Isolation Voltage :
- 2.5kV
- Terminal Form :
- UNSPECIFIED
- JESD-30 Code :
- R-PUFM-X4
- RoHS :
- Details
- Length :
- 38.23 mm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Position :
- UPPER
- Base Product Number :
- IXFN26
- Mount :
- Chassis Mount, Screw
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 900V
- Power Dissipation (Max) :
- 600W (Tc)
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Series :
- HiPerFET™
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Supplier Device Package :
- SOT-227B
- Continuous Drain Current (ID) :
- 26A
- Drain Current-Max (Abs) (ID) :
- 26 A
- Width :
- 25.42 mm
- Rise Time :
- 35ns
- Dual Supply Voltage :
- 900V
- Power Dissipation-Max :
- 600W Tc
- Resistance :
- 300mOhm
- Current Rating :
- 26A
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Drain-source On Resistance-Max :
- 0.3 Ω
- Power Dissipation :
- 600W
- DS Breakdown Voltage-Min :
- 900 V
- Package Shape :
- RECTANGULAR
- Number of Pins :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 10800pF @ 25V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminations :
- 4
- Product Category :
- Discrete Semiconductor Modules
- Datasheets
- IXFN26N90

N-Channel Tube 300m Ω @ 13A, 10V ±20V 10800pF @ 25V 240nC @ 10V 900V SOT-227-4, miniBLOC
IXFN26N90 Description
IXFN26N90 is a high-performance power MOSFET from IXYS Integrated Circuits Division/Littelfuse. It is a member of the HiPerFET power MOSFET product line and is designed for high-speed switching applications.
IXFN26N90 Features
Drain-source voltage (VDS) rating of 900V
Continuous drain current (ID) rating of 26A
Low on-resistance (RDS(on)) of 0.25 ohms
Fast switching speed
Low gate charge (Qg) for improved efficiency
RoHS compliant
IXFN26N90 Applications
Industrial drives
Power supplies
Solar inverters
Uninterruptible power supplies (UPS)
Electric vehicles
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