IXFN26N90

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

UPPER

Package :

Tube

Number of Terminations :

4

Continuous Drain Current (ID) :

26A

FET Type :

N-Channel

Mounting Style :

Chassis Mount

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

26 A

Moisture Sensitivity Level (MSL) :

Not Applicable

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Voltage - Rated DC :

900V

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

26A Tc

Factory Lead Time :

8 Weeks

Minimum Operating Temperature :

- 55 C

Surface Mount :

No

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Product Category :

Discrete Semiconductor Modules

Pin Count :

4

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

300m Ω @ 13A, 10V

Number of Terminals :

4

Drain to Source Breakdown Voltage :

900V

ECCN Code :

EAR99

Isolation Voltage :

2.5kV

Package / Case :

SOT-227-4, miniBLOC

Case Connection :

Isolated

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS :

Details

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

REACH SVHC :

No SVHC

Reach Compliance Code :

Compliant

Number of Channels :

1 Channel

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

900V

Power Dissipation :

600W

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

UNSPECIFIED

Termination :

Screw

Published :

2000

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

900 V

Series :

HiPerFET™

Transistor Polarity :

N-Channel

Polarity/Channel Type :

N-Channel

Width :

25.42 mm

Rise Time :

35ns

Dual Supply Voltage :

900V

Brand :

IXYS

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

JESD-30 Code :

R-PUFM-X4

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

10800pF @ 25V

Current Rating :

26A

Product Type :

Discrete Semiconductor Modules

Mount :

Chassis Mount, Screw

Operating Mode :

ENHANCEMENT MODE

Product :

Power MOSFET Modules

Drain-source On Resistance-Max :

0.3 Ω

Avalanche Energy Rating (Eas) :

3000 mJ

Power Dissipation-Max :

600W Tc

Fall Time (Typ) :

24 ns

Nominal Vgs :

5 V

Pulsed Drain Current-Max (IDM) :

104A

Supplier Device Package :

SOT-227B

Height :

9.6 mm

Power Dissipation (Max) :

600W (Tc)

FET Feature :

--

Package Shape :

RECTANGULAR

Manufacturer :

IXYS

Product Status :

Not For New Designs

Base Product Number :

IXFN26

Pbfree Code :

yes

Power Dissipation-Max (Abs) :

600 W

Terminal Finish :

Nickel (Ni)

Maximum Operating Temperature :

+ 150 C

Tradename :

HyperFET

Vgs(th) (Max) @ Id :

5V @ 8mA

Mounting Type :

Chassis Mount

Resistance :

300mOhm

Turn-Off Delay Time :

130 ns

Weight :

44g

Length :

38.23 mm

Threshold Voltage :

5V