IXFN26N90
- Mfr.Part #
- IXFN26N90
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 26A SOT-227B
- Stock
- 42,049
- In Stock :
- 42,049
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation :
- 600W
- Length :
- 38.23 mm
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Resistance :
- 300mOhm
- Height :
- 9.6 mm
- Current - Continuous Drain (Id) @ 25°C :
- 26A Tc
- Factory Lead Time :
- 8 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Nominal Vgs :
- 5 V
- Turn-Off Delay Time :
- 130 ns
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Isolation Voltage :
- 2.5kV
- Termination :
- Screw
- Drain Current-Max (Abs) (ID) :
- 26 A
- Pulsed Drain Current-Max (IDM) :
- 104A
- Brand :
- IXYS
- Number of Terminals :
- 4
- Continuous Drain Current (ID) :
- 26A
- Power Dissipation-Max :
- 600W Tc
- Product Category :
- Discrete Semiconductor Modules
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation (Max) :
- 600W (Tc)
- Power Dissipation-Max (Abs) :
- 600 W
- Maximum Operating Temperature :
- + 150 C
- Product :
- Power MOSFET Modules
- Case Connection :
- Isolated
- Drain to Source Voltage (Vdss) :
- 900V
- Published :
- 2000
- Input Capacitance (Ciss) (Max) @ Vds :
- 10800pF @ 25V
- Number of Terminations :
- 4
- Drain-source On Resistance-Max :
- 0.3 Ω
- Polarity/Channel Type :
- N-Channel
- Transistor Polarity :
- N-Channel
- Packaging :
- Tube
- Vgs (Max) :
- ±20V
- REACH SVHC :
- No SVHC
- Base Product Number :
- IXFN26
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Number of Channels :
- 1 Channel
- Drain to Source Breakdown Voltage :
- 900V
- Mount :
- Chassis Mount, Screw
- Product Type :
- Discrete Semiconductor Modules
- Surface Mount :
- No
- Threshold Voltage :
- 5V
- Dual Supply Voltage :
- 900V
- Package / Case :
- SOT-227-4, miniBLOC
- Terminal Form :
- UNSPECIFIED
- Mounting Type :
- Chassis Mount
- JESD-30 Code :
- R-PUFM-X4
- Terminal Position :
- UPPER
- Package Shape :
- RECTANGULAR
- Rise Time :
- 35ns
- Weight :
- 44g
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- FET Feature :
- --
- Gate to Source Voltage (Vgs) :
- 20V
- Pbfree Code :
- yes
- Terminal Finish :
- Nickel (Ni)
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 300m Ω @ 13A, 10V
- Product Status :
- Not For New Designs
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Width :
- 25.42 mm
- Gate Charge (Qg) (Max) @ Vgs :
- 240nC @ 10V
- DS Breakdown Voltage-Min :
- 900 V
- Fall Time (Typ) :
- 24 ns
- Voltage - Rated DC :
- 900V
- Mounting Style :
- Chassis Mount
- Reach Compliance Code :
- Compliant
- Package :
- Tube
- Current Rating :
- 26A
- Tradename :
- HyperFET
- Number of Elements :
- 1
- Pin Count :
- 4
- Minimum Operating Temperature :
- - 55 C
- Qualification Status :
- Not Qualified
- Supplier Device Package :
- SOT-227B
- RoHS :
- Details
- Manufacturer :
- IXYS
- Series :
- HiPerFET™
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- ECCN Code :
- EAR99
- Datasheets
- IXFN26N90

N-Channel Tube 300m Ω @ 13A, 10V ±20V 10800pF @ 25V 240nC @ 10V 900V SOT-227-4, miniBLOC
IXFN26N90 Description
IXFN26N90 is a high-performance power MOSFET from IXYS Integrated Circuits Division/Littelfuse. It is a member of the HiPerFET power MOSFET product line and is designed for high-speed switching applications.
IXFN26N90 Features
Drain-source voltage (VDS) rating of 900V
Continuous drain current (ID) rating of 26A
Low on-resistance (RDS(on)) of 0.25 ohms
Fast switching speed
Low gate charge (Qg) for improved efficiency
RoHS compliant
IXFN26N90 Applications
Industrial drives
Power supplies
Solar inverters
Uninterruptible power supplies (UPS)
Electric vehicles
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