IXFN26N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

SOT-227-4, miniBLOC

Number of Terminations :

4

Base Product Number :

IXFN26

Series :

Polar™

Manufacturer :

IXYS

Package Shape :

RECTANGULAR

RoHS Status :

ROHS3 Compliant

Published :

2008

Vgs (Max) :

±30V

Minimum Operating Temperature :

- 55 C

Drain-source On Resistance-Max :

0.39Ohm

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

23A Tc

Number of Terminals :

4

RoHS :

Details

Number of Pins :

4

Terminal Finish :

Nickel (Ni)

Number of Elements :

1

Fall Time (Typ) :

50 ns

Gate to Source Voltage (Vgs) :

30V

Mounting Style :

Chassis Mount

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Case Connection :

Isolated

Avalanche Energy Rating (Eas) :

1000 mJ

Width :

25.42 mm

Turn-Off Delay Time :

72 ns

Power Dissipation (Max) :

595W (Tc)

Maximum Operating Temperature :

+ 150 C

Terminal Position :

UPPER

Product Category :

Discrete Semiconductor Modules

Mounting Type :

Chassis Mount

Gate Charge (Qg) (Max) @ Vgs :

197nC @ 10V

Product Type :

Discrete Semiconductor Modules

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

390m Ω @ 13A, 10V

Power Dissipation-Max (Abs) :

595 W

Height :

9.6 mm

Polarity/Channel Type :

N-Channel

DS Breakdown Voltage-Min :

1000 V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

30 Weeks

Package :

Tube

Terminal Form :

UNSPECIFIED

JESD-30 Code :

R-PUFM-X4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

1kV

Transistor Application :

SWITCHING

Product Status :

Active

Transistor Polarity :

N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current (ID) :

23A

Power Dissipation :

595W

Reach Compliance Code :

Unknown

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Qualification Status :

Not Qualified

Number of Channels :

1 Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Packaging :

Tube

Brand :

IXYS

Drain to Source Voltage (Vdss) :

1000V

Pbfree Code :

yes

Pin Count :

4

FET Feature :

--

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

23 A

FET Type :

N-Channel

Supplier Device Package :

SOT-227B

Mount :

Chassis Mount

Pulsed Drain Current-Max (IDM) :

65A

Rise Time :

45ns

Input Capacitance (Ciss) (Max) @ Vds :

11900pF @ 25V

Length :

38.23 mm

Tradename :

HiPerFET

Power Dissipation-Max :

595W Tc