IXFN24N100F
- Mfr.Part #
- IXFN24N100F
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 24A SOT227B
- Stock
- 1,831
- In Stock :
- 1,831
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Position :
- UPPER
- Power Dissipation-Max :
- 600W Tc
- Power Dissipation :
- 600W
- Manufacturer :
- IXYS Corporation
- Transistor Element Material :
- SILICON
- Rise Time :
- 18ns
- Number of Elements :
- 1
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Surface Mount :
- No
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Fall Time (Typ) :
- 11 ns
- Vgs(th) (Max) @ Id :
- 5.5V @ 8mA
- Package Shape :
- RECTANGULAR
- Gate Charge (Qg) (Max) @ Vgs :
- 195nC @ 10V
- Vgs (Max) :
- ±20V
- Pulsed Drain Current-Max (IDM) :
- 96 A
- Packaging :
- Tube
- Subcategory :
- FET General Purpose Power
- DS Breakdown Voltage-Min :
- 1000 V
- Drain to Source Resistance :
- 390mOhm
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- Nickel (Ni)
- Supplier Device Package :
- SOT-227B
- Max Operating Temperature :
- 150°C
- Max Power Dissipation :
- 600 W
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Type :
- Chassis Mount
- Transistor Application :
- SWITCHING
- Series :
- HiPerRF™
- Continuous Drain Current (ID) :
- 24A
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Current - Continuous Drain (Id) @ 25°C :
- 24A Tc
- FET Feature :
- --
- Published :
- 2002
- Turn-Off Delay Time :
- 52 ns
- ECCN Code :
- EAR99
- RoHS Status :
- RoHS Compliant
- Drain Current-Max (Abs) (ID) :
- 24 A
- JESD-30 Code :
- R-PUFM-X4
- RoHS :
- Compliant
- Qualification Status :
- Not Qualified
- Case Connection :
- DRAIN
- Min Operating Temperature :
- -55°C
- Power Dissipation (Max) :
- 600W (Tc)
- FET Type :
- N-Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain to Source Breakdown Voltage :
- 1kV
- Number of Terminals :
- 4
- Product Status :
- Obsolete
- Polarity/Channel Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 390mOhm @ 12A, 10V
- Pin Count :
- 4
- Package :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 0.39 Ω
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 6600pF @ 25V
- Pbfree Code :
- yes
- Power Dissipation-Max (Abs) :
- 600 W
- Factory Lead Time :
- 10 Weeks
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Reach Compliance Code :
- Compliant
- Package / Case :
- SOT-227-4, miniBLOC
- Drain to Source Voltage (Vdss) :
- 1000V
- Terminal Form :
- UNSPECIFIED
- Number of Pins :
- 4
- REACH SVHC :
- No SVHC
- Datasheets
- IXFN24N100F

N-Channel Tube 390mOhm @ 12A, 10V ±20V 6600pF @ 25V 195nC @ 10V 1000V SOT-227-4, miniBLOC
IXFN24N100F Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3000 mJ.A device's maximum input capacitance is 6600pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 24A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=1kV, and this device has a drain-to-source breakdown voltage of 1kV voltage.Its drain current is 24 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 52 ns.Its maximum pulsed drain current is 96 A, which is also its maximum rating peak drainage current.The Drain-to-Source Resistance (DTS) of a MOSFET is 390mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 1000 V.To operate this transistor, you need to apply a 1000V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFN24N100F Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 52 ns
based on its rated peak drain current 96 A.
single MOSFETs transistor is 390mOhm
a 1000V drain to source voltage (Vdss)
IXFN24N100F Applications
There are a lot of IXYS
IXFN24N100F applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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