IXFN24N100F

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Mfr.Part #
IXFN24N100F
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 1000V 24A SOT227B
Stock
1,831
In Stock :
1,831

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Position :
UPPER
Power Dissipation-Max :
600W Tc
Power Dissipation :
600W
Manufacturer :
IXYS Corporation
Transistor Element Material :
SILICON
Rise Time :
18ns
Number of Elements :
1
Avalanche Energy Rating (Eas) :
3000 mJ
Surface Mount :
No
Configuration :
SINGLE WITH BUILT-IN DIODE
Fall Time (Typ) :
11 ns
Vgs(th) (Max) @ Id :
5.5V @ 8mA
Package Shape :
RECTANGULAR
Gate Charge (Qg) (Max) @ Vgs :
195nC @ 10V
Vgs (Max) :
±20V
Pulsed Drain Current-Max (IDM) :
96 A
Packaging :
Tube
Subcategory :
FET General Purpose Power
DS Breakdown Voltage-Min :
1000 V
Drain to Source Resistance :
390mOhm
Operating Mode :
ENHANCEMENT MODE
Operating Temperature :
-55°C~150°C TJ
Terminal Finish :
Nickel (Ni)
Supplier Device Package :
SOT-227B
Max Operating Temperature :
150°C
Max Power Dissipation :
600 W
Gate to Source Voltage (Vgs) :
20V
Mounting Type :
Chassis Mount
Transistor Application :
SWITCHING
Series :
HiPerRF™
Continuous Drain Current (ID) :
24A
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
Current - Continuous Drain (Id) @ 25°C :
24A Tc
FET Feature :
--
Published :
2002
Turn-Off Delay Time :
52 ns
ECCN Code :
EAR99
RoHS Status :
RoHS Compliant
Drain Current-Max (Abs) (ID) :
24 A
JESD-30 Code :
R-PUFM-X4
RoHS :
Compliant
Qualification Status :
Not Qualified
Case Connection :
DRAIN
Min Operating Temperature :
-55°C
Power Dissipation (Max) :
600W (Tc)
FET Type :
N-Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage :
1kV
Number of Terminals :
4
Product Status :
Obsolete
Polarity/Channel Type :
N-Channel
Rds On (Max) @ Id, Vgs :
390mOhm @ 12A, 10V
Pin Count :
4
Package :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain-source On Resistance-Max :
0.39 Ω
Drive Voltage (Max Rds On,Min Rds On) :
10V
Input Capacitance (Ciss) (Max) @ Vds :
6600pF @ 25V
Pbfree Code :
yes
Power Dissipation-Max (Abs) :
600 W
Factory Lead Time :
10 Weeks
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Reach Compliance Code :
Compliant
Package / Case :
SOT-227-4, miniBLOC
Drain to Source Voltage (Vdss) :
1000V
Terminal Form :
UNSPECIFIED
Number of Pins :
4
REACH SVHC :
No SVHC
Datasheets
IXFN24N100F
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFN24N100F from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Chassis Mount, Package / Case:SOT-227-4, miniBLOC, Number of Pins:4, IXFN24N100F pinout, IXFN24N100F datasheet PDF, IXFN24N100F amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFN24N100F ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFN24N100F


N-Channel Tube 390mOhm @ 12A, 10V ±20V 6600pF @ 25V 195nC @ 10V 1000V SOT-227-4, miniBLOC

IXFN24N100F Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3000 mJ.A device's maximum input capacitance is 6600pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 24A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=1kV, and this device has a drain-to-source breakdown voltage of 1kV voltage.Its drain current is 24 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 52 ns.Its maximum pulsed drain current is 96 A, which is also its maximum rating peak drainage current.The Drain-to-Source Resistance (DTS) of a MOSFET is 390mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 1000 V.To operate this transistor, you need to apply a 1000V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFN24N100F Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 52 ns
based on its rated peak drain current 96 A.
single MOSFETs transistor is 390mOhm
a 1000V drain to source voltage (Vdss)


IXFN24N100F Applications


There are a lot of IXYS
IXFN24N100F applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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