IXFN24N100F
- Mfr.Part #
- IXFN24N100F
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 24A SOT227B
- Stock
- 1,831
- In Stock :
- 1,831
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 0.39 Ω
- Input Capacitance (Ciss) (Max) @ Vds :
- 6600pF @ 25V
- Packaging :
- Tube
- Drain to Source Resistance :
- 390mOhm
- Power Dissipation (Max) :
- 600W (Tc)
- Published :
- 2002
- Rds On (Max) @ Id, Vgs :
- 390mOhm @ 12A, 10V
- Rise Time :
- 18ns
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 10 Weeks
- RoHS Status :
- RoHS Compliant
- Drain Current-Max (Abs) (ID) :
- 24 A
- ECCN Code :
- EAR99
- Manufacturer :
- IXYS Corporation
- Product Status :
- Obsolete
- Continuous Drain Current (ID) :
- 24A
- DS Breakdown Voltage-Min :
- 1000 V
- Gate Charge (Qg) (Max) @ Vgs :
- 195nC @ 10V
- FET Type :
- N-Channel
- Power Dissipation :
- 600W
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Breakdown Voltage :
- 1kV
- Package / Case :
- SOT-227-4, miniBLOC
- REACH SVHC :
- No SVHC
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 600W Tc
- Reach Compliance Code :
- Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Form :
- UNSPECIFIED
- Qualification Status :
- Not Qualified
- Min Operating Temperature :
- -55°C
- Pbfree Code :
- yes
- Turn-Off Delay Time :
- 52 ns
- Current - Continuous Drain (Id) @ 25°C :
- 24A Tc
- Max Power Dissipation :
- 600 W
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Power Dissipation-Max (Abs) :
- 600 W
- Mounting Type :
- Chassis Mount
- Number of Terminals :
- 4
- Package :
- Tube
- Drain to Source Voltage (Vdss) :
- 1000V
- Number of Elements :
- 1
- Terminal Finish :
- Nickel (Ni)
- FET Feature :
- --
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Operating Temperature :
- -55°C~150°C TJ
- Supplier Device Package :
- SOT-227B
- Transistor Application :
- SWITCHING
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs(th) (Max) @ Id :
- 5.5V @ 8mA
- RoHS :
- Compliant
- Terminal Position :
- UPPER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- DRAIN
- Subcategory :
- FET General Purpose Power
- Series :
- HiPerRF™
- Package Shape :
- RECTANGULAR
- Surface Mount :
- No
- Max Operating Temperature :
- 150°C
- Pulsed Drain Current-Max (IDM) :
- 96 A
- Number of Pins :
- 4
- Polarity/Channel Type :
- N-Channel
- JESD-30 Code :
- R-PUFM-X4
- Pin Count :
- 4
- Fall Time (Typ) :
- 11 ns
- Datasheets
- IXFN24N100F
IXFN24N100F Documents

N-Channel Tube 390mOhm @ 12A, 10V ±20V 6600pF @ 25V 195nC @ 10V 1000V SOT-227-4, miniBLOC
IXFN24N100F Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3000 mJ.A device's maximum input capacitance is 6600pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 24A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=1kV, and this device has a drain-to-source breakdown voltage of 1kV voltage.Its drain current is 24 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 52 ns.Its maximum pulsed drain current is 96 A, which is also its maximum rating peak drainage current.The Drain-to-Source Resistance (DTS) of a MOSFET is 390mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 1000 V.To operate this transistor, you need to apply a 1000V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFN24N100F Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 52 ns
based on its rated peak drain current 96 A.
single MOSFETs transistor is 390mOhm
a 1000V drain to source voltage (Vdss)
IXFN24N100F Applications
There are a lot of IXYS
IXFN24N100F applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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