IXFN240N15T2

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Mfr.Part #
IXFN240N15T2
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 150V 240A SOT227B
Stock
36,754
In Stock :
36,754

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Case Connection :
Isolated
Min Operating Temperature :
-55 °C
Number of Terminations :
4
Base Product Number :
IXFN240
Drain to Source Resistance :
5.2 mΩ
Output Voltage :
150V
RoHS :
Details
Gate to Source Voltage (Vgs) :
20V
Rds On (Max) @ Id, Vgs :
5.2m Ω @ 60A, 10V
Supplier Device Package :
SOT-227B
ECCN Code :
EAR99
FET Feature :
--
Rise Time :
125ns
Max Operating Temperature :
175 °C
RoHS Status :
ROHS3 Compliant
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pin Count :
4
Nominal Supply Current :
120A
Drain to Source Voltage (Vdss) :
150V
Package Shape :
RECTANGULAR
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation (Max) :
830W (Tc)
Fall Time (Typ) :
145 ns
FET Type :
N-Channel
Pbfree Code :
yes
Drain-source On Resistance-Max :
0.0052Ohm
Tradename :
HiPerFET
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Finish :
Nickel
Product Status :
Active
Rds On Max :
5.2 mΩ
Terminal Position :
UPPER
Series :
GigaMOS™
Vgs (Max) :
±20V
Package / Case :
SOT-227-4, miniBLOC
Transistor Polarity :
N-Channel
Qualification Status :
Not Qualified
Gate Charge (Qg) (Max) @ Vgs :
460nC @ 10V
Maximum Operating Temperature :
+ 175 C
Product Type :
Discrete Semiconductor Modules
Transistor Application :
SWITCHING
Turn-Off Delay Time :
77 ns
Input Capacitance (Ciss) (Max) @ Vds :
32000pF @ 25V
Published :
2009
Number of Terminals :
4
Pulsed Drain Current-Max (IDM) :
600A
Vgs(th) (Max) @ Id :
5V @ 8mA
DS Breakdown Voltage-Min :
150 V
Lead Free :
Lead Free
Mount :
Chassis Mount
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Operating Temperature :
-55°C~175°C TJ
Turn On Delay Time :
48 ns
Transistor Element Material :
SILICON
Number of Outputs :
1
Minimum Operating Temperature :
- 55 C
Max Power Dissipation :
830 W
Factory Lead Time :
30 Weeks
Power Dissipation-Max :
830W Tc
JESD-30 Code :
R-PUFM-X4
Continuous Drain Current (ID) :
240A
Brand :
IXYS
Drain Current-Max (Abs) (ID) :
240 A
Configuration :
SINGLE WITH BUILT-IN DIODE
Avalanche Energy Rating (Eas) :
2000 mJ
Terminal Form :
UNSPECIFIED
Product Category :
Discrete Semiconductor Modules
Type :
GigaMOS Trench T2 HiperFet
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
Number of Elements :
1
Operating Mode :
ENHANCEMENT MODE
Mounting Style :
Chassis Mount
Input Capacitance :
32 nF
Manufacturer :
IXYS
Power Dissipation :
830W
Turn-On Delay Time :
48 ns
Packaging :
Tube
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Surface Mount :
No
Power Dissipation-Max (Abs) :
830 W
Output Current :
240A
Current - Continuous Drain (Id) @ 25°C :
240A Tc
Drain to Source Breakdown Voltage :
150V
Package :
Tube
Reach Compliance Code :
Unknown
Mounting Type :
Chassis Mount
Polarity/Channel Type :
N-Channel
Datasheets
IXFN240N15T2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFN240N15T2 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:4, Package / Case:SOT-227-4, miniBLOC, Operating Temperature:-55°C~175°C TJ, Type:GigaMOS Trench T2 HiperFet, Mounting Type:Chassis Mount, IXFN240N15T2 pinout, IXFN240N15T2 datasheet PDF, IXFN240N15T2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFN240N15T2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFN240N15T2


N-Channel Tube 5.2m Ω @ 60A, 10V ±20V 32000pF @ 25V 460nC @ 10V 150V SOT-227-4, miniBLOC

IXFN240N15T2 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 2000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 32000pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 240A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 150V, and this device has a drainage-to-source breakdown voltage of 150VV.Drain current refers to the maximum continuous current a device can conduct, and it is 240 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 77 ns.Peak drain current is 600A, which is the maximum pulsed drain current.This device has a drain-to-source resistance of 5.2 mΩ when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 48 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 150 V.For this transistor to work, a voltage 150V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFN240N15T2 Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 240A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 77 ns
based on its rated peak drain current 600A.
single MOSFETs transistor is 5.2 mΩ
a 150V drain to source voltage (Vdss)


IXFN240N15T2 Applications


There are a lot of IXYS
IXFN240N15T2 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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