IXFN240N15T2
- Mfr.Part #
- IXFN240N15T2
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 240A SOT227B
- Stock
- 36,754
- In Stock :
- 36,754
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Case Connection :
- Isolated
- Min Operating Temperature :
- -55 °C
- Number of Terminations :
- 4
- Base Product Number :
- IXFN240
- Drain to Source Resistance :
- 5.2 mΩ
- Output Voltage :
- 150V
- RoHS :
- Details
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 5.2m Ω @ 60A, 10V
- Supplier Device Package :
- SOT-227B
- ECCN Code :
- EAR99
- FET Feature :
- --
- Rise Time :
- 125ns
- Max Operating Temperature :
- 175 °C
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pin Count :
- 4
- Nominal Supply Current :
- 120A
- Drain to Source Voltage (Vdss) :
- 150V
- Package Shape :
- RECTANGULAR
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation (Max) :
- 830W (Tc)
- Fall Time (Typ) :
- 145 ns
- FET Type :
- N-Channel
- Pbfree Code :
- yes
- Drain-source On Resistance-Max :
- 0.0052Ohm
- Tradename :
- HiPerFET
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Nickel
- Product Status :
- Active
- Rds On Max :
- 5.2 mΩ
- Terminal Position :
- UPPER
- Series :
- GigaMOS™
- Vgs (Max) :
- ±20V
- Package / Case :
- SOT-227-4, miniBLOC
- Transistor Polarity :
- N-Channel
- Qualification Status :
- Not Qualified
- Gate Charge (Qg) (Max) @ Vgs :
- 460nC @ 10V
- Maximum Operating Temperature :
- + 175 C
- Product Type :
- Discrete Semiconductor Modules
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 77 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 32000pF @ 25V
- Published :
- 2009
- Number of Terminals :
- 4
- Pulsed Drain Current-Max (IDM) :
- 600A
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- DS Breakdown Voltage-Min :
- 150 V
- Lead Free :
- Lead Free
- Mount :
- Chassis Mount
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Operating Temperature :
- -55°C~175°C TJ
- Turn On Delay Time :
- 48 ns
- Transistor Element Material :
- SILICON
- Number of Outputs :
- 1
- Minimum Operating Temperature :
- - 55 C
- Max Power Dissipation :
- 830 W
- Factory Lead Time :
- 30 Weeks
- Power Dissipation-Max :
- 830W Tc
- JESD-30 Code :
- R-PUFM-X4
- Continuous Drain Current (ID) :
- 240A
- Brand :
- IXYS
- Drain Current-Max (Abs) (ID) :
- 240 A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Terminal Form :
- UNSPECIFIED
- Product Category :
- Discrete Semiconductor Modules
- Type :
- GigaMOS Trench T2 HiperFet
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Style :
- Chassis Mount
- Input Capacitance :
- 32 nF
- Manufacturer :
- IXYS
- Power Dissipation :
- 830W
- Turn-On Delay Time :
- 48 ns
- Packaging :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Surface Mount :
- No
- Power Dissipation-Max (Abs) :
- 830 W
- Output Current :
- 240A
- Current - Continuous Drain (Id) @ 25°C :
- 240A Tc
- Drain to Source Breakdown Voltage :
- 150V
- Package :
- Tube
- Reach Compliance Code :
- Unknown
- Mounting Type :
- Chassis Mount
- Polarity/Channel Type :
- N-Channel
- Datasheets
- IXFN240N15T2

N-Channel Tube 5.2m Ω @ 60A, 10V ±20V 32000pF @ 25V 460nC @ 10V 150V SOT-227-4, miniBLOC
IXFN240N15T2 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 2000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 32000pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 240A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 150V, and this device has a drainage-to-source breakdown voltage of 150VV.Drain current refers to the maximum continuous current a device can conduct, and it is 240 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 77 ns.Peak drain current is 600A, which is the maximum pulsed drain current.This device has a drain-to-source resistance of 5.2 mΩ when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 48 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 150 V.For this transistor to work, a voltage 150V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFN240N15T2 Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 240A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 77 ns
based on its rated peak drain current 600A.
single MOSFETs transistor is 5.2 mΩ
a 150V drain to source voltage (Vdss)
IXFN240N15T2 Applications
There are a lot of IXYS
IXFN240N15T2 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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