IXFN240N15T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Drain to Source Breakdown Voltage :

150V

Gate Charge (Qg) (Max) @ Vgs :

460nC @ 10V

JESD-30 Code :

R-PUFM-X4

Rds On Max :

5.2 mΩ

Input Capacitance (Ciss) (Max) @ Vds :

32000pF @ 25V

Surface Mount :

No

Product Category :

Discrete Semiconductor Modules

Terminal Finish :

Nickel

Drain Current-Max (Abs) (ID) :

240 A

RoHS :

Details

RoHS Status :

ROHS3 Compliant

Drain to Source Resistance :

5.2 mΩ

Fall Time (Typ) :

145 ns

Rise Time :

125ns

Min Operating Temperature :

-55 °C

Mount :

Chassis Mount

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Supplier Device Package :

SOT-227B

Gate to Source Voltage (Vgs) :

20V

Package :

Tube

Manufacturer :

IXYS

Series :

GigaMOS™

Brand :

IXYS

Output Voltage :

150V

Package Shape :

RECTANGULAR

Input Capacitance :

32 nF

Power Dissipation :

830W

Product Type :

Discrete Semiconductor Modules

Qualification Status :

Not Qualified

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

150V

Drain-source On Resistance-Max :

0.0052Ohm

Current - Continuous Drain (Id) @ 25°C :

240A Tc

Avalanche Energy Rating (Eas) :

2000 mJ

Max Power Dissipation :

830 W

Terminal Position :

UPPER

Maximum Operating Temperature :

+ 175 C

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

150 V

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Power Dissipation-Max (Abs) :

830 W

Case Connection :

Isolated

Number of Terminations :

4

Type :

GigaMOS Trench T2 HiperFet

FET Type :

N-Channel

Number of Terminals :

4

Tradename :

HiPerFET

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Product Number :

IXFN240

Output Current :

240A

Package / Case :

SOT-227-4, miniBLOC

Rds On (Max) @ Id, Vgs :

5.2m Ω @ 60A, 10V

Reach Compliance Code :

Unknown

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

UNSPECIFIED

Vgs(th) (Max) @ Id :

5V @ 8mA

Nominal Supply Current :

120A

Turn-Off Delay Time :

77 ns

Mounting Type :

Chassis Mount

Number of Elements :

1

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Style :

Chassis Mount

Continuous Drain Current (ID) :

240A

Factory Lead Time :

30 Weeks

Power Dissipation (Max) :

830W (Tc)

Polarity/Channel Type :

N-Channel

Turn-On Delay Time :

48 ns

Operating Temperature :

-55°C~175°C TJ

Turn On Delay Time :

48 ns

Pulsed Drain Current-Max (IDM) :

600A

Minimum Operating Temperature :

- 55 C

Number of Outputs :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Product Status :

Active

Transistor Polarity :

N-Channel

ECCN Code :

EAR99

Published :

2009

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

Power Dissipation-Max :

830W Tc

FET Feature :

--

Max Operating Temperature :

175 °C

Pin Count :

4