IXFN210N20P
- Mfr.Part #
- IXFN210N20P
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 188A SOT-227B
- Stock
- 7,334
- In Stock :
- 7,334
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Packaging :
- Tube
- Package :
- Tube
- Number of Channels :
- 1 Channel
- Resistance :
- 10.5mOhm
- Gate Charge (Qg) (Max) @ Vgs :
- 255nC @ 10V
- Case Connection :
- Isolated
- Configuration :
- Single
- Number of Pins :
- 4
- Type :
- HiPerFET
- FET Feature :
- --
- Manufacturer :
- IXYS
- Element Configuration :
- Single
- Polarity/Channel Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 200 V
- Drain-source On Resistance-Max :
- 0.0105 Ω
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 18600pF @ 25V
- Package Shape :
- RECTANGULAR
- Avalanche Energy Rating (Eas) :
- 4000 mJ
- Power Dissipation-Max :
- 1070W Tc
- Package / Case :
- SOT-227-4, miniBLOC
- Series :
- HiPerFET™
- JESD-30 Code :
- R-PUFM-X4
- Published :
- 2010
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Chassis Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Product Category :
- Discrete Semiconductor Modules
- Power Dissipation (Max) :
- 1070W (Tc)
- Tradename :
- HiPerFET
- Number of Terminations :
- 4
- Surface Mount :
- No
- Number of Elements :
- 1
- Base Product Number :
- IXFN210
- Mounting Style :
- Screw Mounts
- Current - Continuous Drain (Id) @ 25°C :
- 188A Tc
- Transistor Polarity :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4.5V @ 8mA
- Pulsed Drain Current-Max (IDM) :
- 600A
- Operating Temperature :
- -55°C~175°C TJ
- Product Type :
- Discrete Semiconductor Modules
- FET Type :
- N-Channel
- Pin Count :
- 4
- Number of Terminals :
- 4
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max (Abs) :
- 1070 W
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Terminal Finish :
- Nickel (Ni)
- Drain Current-Max (Abs) (ID) :
- 188 A
- Continuous Drain Current (ID) :
- 188A
- Drain to Source Voltage (Vdss) :
- 200V
- Drain to Source Breakdown Voltage :
- 200V
- Maximum Operating Temperature :
- + 175 C
- Terminal Position :
- UPPER
- Brand :
- IXYS
- Supplier Device Package :
- SOT-227B
- Factory Lead Time :
- 30 Weeks
- Pbfree Code :
- yes
- RoHS :
- Details
- Product Status :
- Active
- Reach Compliance Code :
- Compliant
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 1.07kW
- Minimum Operating Temperature :
- - 55 C
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 10.5m Ω @ 105A, 10V
- Terminal Form :
- UNSPECIFIED
- Mount :
- Chassis Mount, Screw
- Product :
- Power MOSFET Modules
- Datasheets
- IXFN210N20P

N-Channel Tube 10.5m Ω @ 105A, 10V ±20V 18600pF @ 25V 255nC @ 10V 200V SOT-227-4, miniBLOC
IXFN210N20P Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 4000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 18600pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 188A.With a drain-source breakdown voltage of 200V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 200V.188 A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 600A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 200 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 200V.Using drive voltage (10V) reduces this device's overall power consumption.
IXFN210N20P Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 188A
a drain-to-source breakdown voltage of 200V voltage
based on its rated peak drain current 600A.
a 200V drain to source voltage (Vdss)
IXFN210N20P Applications
There are a lot of IXYS
IXFN210N20P applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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