IXFN210N20P

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Mfr.Part #
IXFN210N20P
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 200V 188A SOT-227B
Stock
7,334
In Stock :
7,334

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Surface Mount :
No
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
Gate to Source Voltage (Vgs) :
20V
Input Capacitance (Ciss) (Max) @ Vds :
18600pF @ 25V
Vgs (Max) :
±20V
Number of Elements :
1
Operating Mode :
ENHANCEMENT MODE
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Terminals :
4
Power Dissipation (Max) :
1070W (Tc)
Case Connection :
Isolated
RoHS Status :
ROHS3 Compliant
Continuous Drain Current (ID) :
188A
Terminal Finish :
Nickel (Ni)
Package / Case :
SOT-227-4, miniBLOC
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Product Status :
Active
FET Feature :
--
Manufacturer :
IXYS
Number of Terminations :
4
FET Type :
N-Channel
Product Category :
Discrete Semiconductor Modules
Drain Current-Max (Abs) (ID) :
188 A
DS Breakdown Voltage-Min :
200 V
Number of Channels :
1 Channel
Power Dissipation-Max :
1070W Tc
Product :
Power MOSFET Modules
Pulsed Drain Current-Max (IDM) :
600A
Vgs(th) (Max) @ Id :
4.5V @ 8mA
Package :
Tube
Drain to Source Voltage (Vdss) :
200V
Configuration :
Single
Polarity/Channel Type :
N-Channel
Pin Count :
4
Drain to Source Breakdown Voltage :
200V
Pbfree Code :
yes
Gate Charge (Qg) (Max) @ Vgs :
255nC @ 10V
Avalanche Energy Rating (Eas) :
4000 mJ
Transistor Application :
SWITCHING
RoHS :
Details
Power Dissipation-Max (Abs) :
1070 W
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Pins :
4
Packaging :
Tube
Mounting Type :
Chassis Mount
Package Shape :
RECTANGULAR
Resistance :
10.5mOhm
Mounting Style :
Screw Mounts
Supplier Device Package :
SOT-227B
Tradename :
HiPerFET
Current - Continuous Drain (Id) @ 25°C :
188A Tc
Transistor Element Material :
SILICON
Maximum Operating Temperature :
+ 175 C
Terminal Position :
UPPER
Factory Lead Time :
30 Weeks
Power Dissipation :
1.07kW
Transistor Polarity :
N-Channel
Drain-source On Resistance-Max :
0.0105 Ω
Base Product Number :
IXFN210
Rds On (Max) @ Id, Vgs :
10.5m Ω @ 105A, 10V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Minimum Operating Temperature :
- 55 C
Qualification Status :
Not Qualified
Reach Compliance Code :
Compliant
Lead Free :
Lead Free
Element Configuration :
Single
Type :
HiPerFET
ECCN Code :
EAR99
JESD-30 Code :
R-PUFM-X4
Mount :
Chassis Mount, Screw
Operating Temperature :
-55°C~175°C TJ
Published :
2010
Series :
HiPerFET™
Terminal Form :
UNSPECIFIED
Product Type :
Discrete Semiconductor Modules
Brand :
IXYS
Datasheets
IXFN210N20P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFN210N20P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SOT-227-4, miniBLOC, Number of Terminations:4, Number of Channels:1 Channel, Number of Pins:4, Mounting Type:Chassis Mount, Type:HiPerFET, Operating Temperature:-55°C~175°C TJ, IXFN210N20P pinout, IXFN210N20P datasheet PDF, IXFN210N20P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFN210N20P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFN210N20P


N-Channel Tube 10.5m Ω @ 105A, 10V ±20V 18600pF @ 25V 255nC @ 10V 200V SOT-227-4, miniBLOC

IXFN210N20P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 4000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 18600pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 188A.With a drain-source breakdown voltage of 200V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 200V.188 A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 600A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 200 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 200V.Using drive voltage (10V) reduces this device's overall power consumption.

IXFN210N20P Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 188A
a drain-to-source breakdown voltage of 200V voltage
based on its rated peak drain current 600A.
a 200V drain to source voltage (Vdss)


IXFN210N20P Applications


There are a lot of IXYS
IXFN210N20P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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