IXFN210N20P
- Mfr.Part #
- IXFN210N20P
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 188A SOT-227B
- Stock
- 7,334
- In Stock :
- 7,334
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- No
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 18600pF @ 25V
- Vgs (Max) :
- ±20V
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Terminals :
- 4
- Power Dissipation (Max) :
- 1070W (Tc)
- Case Connection :
- Isolated
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 188A
- Terminal Finish :
- Nickel (Ni)
- Package / Case :
- SOT-227-4, miniBLOC
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Product Status :
- Active
- FET Feature :
- --
- Manufacturer :
- IXYS
- Number of Terminations :
- 4
- FET Type :
- N-Channel
- Product Category :
- Discrete Semiconductor Modules
- Drain Current-Max (Abs) (ID) :
- 188 A
- DS Breakdown Voltage-Min :
- 200 V
- Number of Channels :
- 1 Channel
- Power Dissipation-Max :
- 1070W Tc
- Product :
- Power MOSFET Modules
- Pulsed Drain Current-Max (IDM) :
- 600A
- Vgs(th) (Max) @ Id :
- 4.5V @ 8mA
- Package :
- Tube
- Drain to Source Voltage (Vdss) :
- 200V
- Configuration :
- Single
- Polarity/Channel Type :
- N-Channel
- Pin Count :
- 4
- Drain to Source Breakdown Voltage :
- 200V
- Pbfree Code :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 255nC @ 10V
- Avalanche Energy Rating (Eas) :
- 4000 mJ
- Transistor Application :
- SWITCHING
- RoHS :
- Details
- Power Dissipation-Max (Abs) :
- 1070 W
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Pins :
- 4
- Packaging :
- Tube
- Mounting Type :
- Chassis Mount
- Package Shape :
- RECTANGULAR
- Resistance :
- 10.5mOhm
- Mounting Style :
- Screw Mounts
- Supplier Device Package :
- SOT-227B
- Tradename :
- HiPerFET
- Current - Continuous Drain (Id) @ 25°C :
- 188A Tc
- Transistor Element Material :
- SILICON
- Maximum Operating Temperature :
- + 175 C
- Terminal Position :
- UPPER
- Factory Lead Time :
- 30 Weeks
- Power Dissipation :
- 1.07kW
- Transistor Polarity :
- N-Channel
- Drain-source On Resistance-Max :
- 0.0105 Ω
- Base Product Number :
- IXFN210
- Rds On (Max) @ Id, Vgs :
- 10.5m Ω @ 105A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Minimum Operating Temperature :
- - 55 C
- Qualification Status :
- Not Qualified
- Reach Compliance Code :
- Compliant
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Type :
- HiPerFET
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PUFM-X4
- Mount :
- Chassis Mount, Screw
- Operating Temperature :
- -55°C~175°C TJ
- Published :
- 2010
- Series :
- HiPerFET™
- Terminal Form :
- UNSPECIFIED
- Product Type :
- Discrete Semiconductor Modules
- Brand :
- IXYS
- Datasheets
- IXFN210N20P

N-Channel Tube 10.5m Ω @ 105A, 10V ±20V 18600pF @ 25V 255nC @ 10V 200V SOT-227-4, miniBLOC
IXFN210N20P Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 4000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 18600pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 188A.With a drain-source breakdown voltage of 200V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 200V.188 A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 600A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 200 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 200V.Using drive voltage (10V) reduces this device's overall power consumption.
IXFN210N20P Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 188A
a drain-to-source breakdown voltage of 200V voltage
based on its rated peak drain current 600A.
a 200V drain to source voltage (Vdss)
IXFN210N20P Applications
There are a lot of IXYS
IXFN210N20P applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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