IXFN20N120P
- Mfr.Part #
- IXFN20N120P
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 1200V 20A SOT-227B
- Stock
- 30,794
- In Stock :
- 30,794
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS :
- Compliant
- Drain to Source Breakdown Voltage :
- 1.2kV
- Base Product Number :
- IXFN20
- Turn-Off Delay Time :
- 72 ns
- Case Connection :
- Isolated
- Length :
- 38.23 mm
- Minimum Operating Temperature :
- - 55 C
- Transistor Polarity :
- N-Channel
- Vgs(th) (Max) @ Id :
- 6.5V @ 1mA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Product Category :
- Discrete Semiconductor Modules
- Factory Lead Time :
- 30 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Tradename :
- HiPerFET
- Pin Count :
- 4
- Polarity/Channel Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Feature :
- --
- Fall Time (Typ) :
- 70 ns
- Width :
- 25.42 mm
- Mounting Type :
- Chassis Mount
- Additional Feature :
- UL RECOGNIZED, AVALANCHE RATED
- DS Breakdown Voltage-Min :
- 1200 V
- Number of Channels :
- 1 Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 11100pF @ 25V
- Rds On Max :
- 570 mΩ
- Operating Temperature :
- -55°C~150°C TJ
- Height :
- 12.22 mm
- Input Capacitance :
- 11.1 nF
- Power Dissipation-Max (Abs) :
- 595 W
- FET Type :
- N-Channel
- Mounting Style :
- Chassis Mount
- Gate to Source Voltage (Vgs) :
- 30V
- Package :
- Tube
- JESD-30 Code :
- R-PUFM-X4
- Max Operating Temperature :
- 150 °C
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Type :
- Polar Power MOSFET HiPerFET
- Drain to Source Voltage (Vdss) :
- 1200V
- Gate Charge (Qg) (Max) @ Vgs :
- 193nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±30V
- Mount :
- Chassis Mount
- Published :
- 2008
- Terminal Form :
- UNSPECIFIED
- Power Dissipation-Max :
- 595W Tc
- Manufacturer :
- IXYS
- Drain-source On Resistance-Max :
- 0.57Ohm
- Maximum Operating Temperature :
- + 150 C
- Rds On (Max) @ Id, Vgs :
- 570m Ω @ 10A, 10V
- Terminal Position :
- UPPER
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Continuous Drain Current (ID) :
- 20A
- Drain Current-Max (Abs) (ID) :
- 20 A
- Brand :
- IXYS
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Product Status :
- Active
- Terminal Finish :
- Nickel (Ni)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Pins :
- 4
- Number of Terminals :
- 4
- Transistor Element Material :
- SILICON
- Product Type :
- Discrete Semiconductor Modules
- Supplier Device Package :
- SOT-227B
- Reach Compliance Code :
- Compliant
- Min Operating Temperature :
- -55 °C
- Surface Mount :
- No
- Series :
- Polar™
- Drain to Source Resistance :
- 570 mΩ
- Power Dissipation (Max) :
- 595W (Tc)
- Package Shape :
- RECTANGULAR
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Pbfree Code :
- yes
- Package / Case :
- SOT-227-4, miniBLOC
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 4
- Rise Time :
- 45ns
- Max Power Dissipation :
- 595 W
- Packaging :
- Tube
- Power Dissipation :
- 595W
- Pulsed Drain Current-Max (IDM) :
- 50A
- Datasheets
- IXFN20N120P

N-Channel Tube 570m Ω @ 10A, 10V ±30V 11100pF @ 25V 193nC @ 10V 1200V SOT-227-4, miniBLOC
IXFN20N120P Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 11100pF @ 25V.This device conducts a continuous drain current (ID) of 20A, which is the maximum continuous current transistor can conduct.Using VGS=1.2kV and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 1.2kV (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 20 A.When the device is turned off, a turn-off delay time of 72 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 50A.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 570 mΩ, which means the device is not biased.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 1200 V.This transistor requires a drain-source voltage (Vdss) of 1200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFN20N120P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 72 ns
based on its rated peak drain current 50A.
single MOSFETs transistor is 570 mΩ
a 1200V drain to source voltage (Vdss)
IXFN20N120P Applications
There are a lot of IXYS
IXFN20N120P applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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