IXFN20N120P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Product Status :

Active

Power Dissipation-Max :

595W Tc

Pin Count :

4

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Type :

Polar Power MOSFET HiPerFET

FET Type :

N-Channel

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Style :

Chassis Mount

Reach Compliance Code :

Compliant

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

11100pF @ 25V

Power Dissipation-Max (Abs) :

595 W

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Max Power Dissipation :

595 W

Rds On (Max) @ Id, Vgs :

570m Ω @ 10A, 10V

Fall Time (Typ) :

70 ns

Max Operating Temperature :

150 °C

RoHS :

Compliant

Terminal Finish :

Nickel (Ni)

Continuous Drain Current (ID) :

20A

Package :

Tube

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package Shape :

RECTANGULAR

Minimum Operating Temperature :

- 55 C

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance :

11.1 nF

Number of Channels :

1 Channel

Terminal Form :

UNSPECIFIED

Rds On Max :

570 mΩ

FET Feature :

--

Additional Feature :

UL RECOGNIZED, AVALANCHE RATED

Power Dissipation :

595W

Polarity/Channel Type :

N-Channel

Drain to Source Voltage (Vdss) :

1200V

Drain Current-Max (Abs) (ID) :

20 A

Number of Terminals :

4

Drain to Source Resistance :

570 mΩ

Terminal Position :

UPPER

Supplier Device Package :

SOT-227B

Operating Mode :

ENHANCEMENT MODE

Mount :

Chassis Mount

Rise Time :

45ns

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Surface Mount :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Product Type :

Discrete Semiconductor Modules

Power Dissipation (Max) :

595W (Tc)

Number of Terminations :

4

Pulsed Drain Current-Max (IDM) :

50A

Case Connection :

Isolated

RoHS Status :

ROHS3 Compliant

Product Category :

Discrete Semiconductor Modules

Qualification Status :

Not Qualified

Width :

25.42 mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Chassis Mount

Length :

38.23 mm

Series :

Polar™

Maximum Operating Temperature :

+ 150 C

Published :

2008

JESD-30 Code :

R-PUFM-X4

Tradename :

HiPerFET

DS Breakdown Voltage-Min :

1200 V

Gate Charge (Qg) (Max) @ Vgs :

193nC @ 10V

Base Product Number :

IXFN20

Factory Lead Time :

30 Weeks

Brand :

IXYS

Min Operating Temperature :

-55 °C

Drain-source On Resistance-Max :

0.57Ohm

Gate to Source Voltage (Vgs) :

30V

Vgs (Max) :

±30V

Number of Pins :

4

Manufacturer :

IXYS

Transistor Polarity :

N-Channel

Package / Case :

SOT-227-4, miniBLOC

Height :

12.22 mm

Transistor Application :

SWITCHING

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

72 ns

Avalanche Energy Rating (Eas) :

1000 mJ

Drain to Source Breakdown Voltage :

1.2kV