IXFN20N120P

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Mfr.Part #
IXFN20N120P
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 1200V 20A SOT-227B
Stock
30,794
In Stock :
30,794

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Tradename :
HiPerFET
Max Power Dissipation :
595 W
FET Type :
N-Channel
Product Category :
Discrete Semiconductor Modules
Transistor Application :
SWITCHING
Series :
Polar™
Base Product Number :
IXFN20
Avalanche Energy Rating (Eas) :
1000 mJ
Power Dissipation-Max (Abs) :
595 W
Power Dissipation (Max) :
595W (Tc)
Vgs(th) (Max) @ Id :
6.5V @ 1mA
Height :
12.22 mm
Vgs (Max) :
±30V
Number of Elements :
1
Factory Lead Time :
30 Weeks
Operating Temperature :
-55°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Chassis Mount
Drain to Source Breakdown Voltage :
1.2kV
Supplier Device Package :
SOT-227B
Polarity/Channel Type :
N-Channel
Terminal Finish :
Nickel (Ni)
RoHS :
Compliant
Gate Charge (Qg) (Max) @ Vgs :
193nC @ 10V
Qualification Status :
Not Qualified
Number of Channels :
1 Channel
Width :
25.42 mm
Mounting Type :
Chassis Mount
Min Operating Temperature :
-55 °C
Type :
Polar Power MOSFET HiPerFET
Current - Continuous Drain (Id) @ 25°C :
20A Tc
Terminal Position :
UPPER
Package :
Tube
Packaging :
Tube
Brand :
IXYS
RoHS Status :
ROHS3 Compliant
Product Type :
Discrete Semiconductor Modules
Transistor Polarity :
N-Channel
Power Dissipation-Max :
595W Tc
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Pin Count :
4
Number of Pins :
4
Rds On Max :
570 mΩ
Drain to Source Resistance :
570 mΩ
DS Breakdown Voltage-Min :
1200 V
Gate to Source Voltage (Vgs) :
30V
Configuration :
SINGLE WITH BUILT-IN DIODE
Operating Mode :
ENHANCEMENT MODE
Number of Terminals :
4
Rise Time :
45ns
Case Connection :
Isolated
Length :
38.23 mm
Fall Time (Typ) :
70 ns
Number of Terminations :
4
Maximum Operating Temperature :
+ 150 C
Input Capacitance :
11.1 nF
Max Operating Temperature :
150 °C
FET Feature :
--
Drain-source On Resistance-Max :
0.57Ohm
Continuous Drain Current (ID) :
20A
Mounting Style :
Chassis Mount
Surface Mount :
No
Pbfree Code :
yes
Pulsed Drain Current-Max (IDM) :
50A
Drain to Source Voltage (Vdss) :
1200V
Power Dissipation :
595W
Package Shape :
RECTANGULAR
Product Status :
Active
Drive Voltage (Max Rds On,Min Rds On) :
10V
Published :
2008
Terminal Form :
UNSPECIFIED
Transistor Element Material :
SILICON
Package / Case :
SOT-227-4, miniBLOC
Manufacturer :
IXYS
Drain Current-Max (Abs) (ID) :
20 A
Minimum Operating Temperature :
- 55 C
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Rds On (Max) @ Id, Vgs :
570m Ω @ 10A, 10V
Reach Compliance Code :
Compliant
Input Capacitance (Ciss) (Max) @ Vds :
11100pF @ 25V
Additional Feature :
UL RECOGNIZED, AVALANCHE RATED
JESD-30 Code :
R-PUFM-X4
Turn-Off Delay Time :
72 ns
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Datasheets
IXFN20N120P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFN20N120P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Mounting Type:Chassis Mount, Type:Polar Power MOSFET HiPerFET, Number of Pins:4, Number of Terminations:4, Package / Case:SOT-227-4, miniBLOC, IXFN20N120P pinout, IXFN20N120P datasheet PDF, IXFN20N120P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFN20N120P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFN20N120P


N-Channel Tube 570m Ω @ 10A, 10V ±30V 11100pF @ 25V 193nC @ 10V 1200V SOT-227-4, miniBLOC

IXFN20N120P Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 11100pF @ 25V.This device conducts a continuous drain current (ID) of 20A, which is the maximum continuous current transistor can conduct.Using VGS=1.2kV and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 1.2kV (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 20 A.When the device is turned off, a turn-off delay time of 72 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 50A.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 570 mΩ, which means the device is not biased.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 1200 V.This transistor requires a drain-source voltage (Vdss) of 1200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFN20N120P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 72 ns
based on its rated peak drain current 50A.
single MOSFETs transistor is 570 mΩ
a 1200V drain to source voltage (Vdss)


IXFN20N120P Applications


There are a lot of IXYS
IXFN20N120P applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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