IXFN20N120P

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Mfr.Part #
IXFN20N120P
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 1200V 20A SOT-227B
Stock
30,794
In Stock :
30,794

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Configuration :
SINGLE WITH BUILT-IN DIODE
RoHS :
Compliant
Drain to Source Breakdown Voltage :
1.2kV
Base Product Number :
IXFN20
Turn-Off Delay Time :
72 ns
Case Connection :
Isolated
Length :
38.23 mm
Minimum Operating Temperature :
- 55 C
Transistor Polarity :
N-Channel
Vgs(th) (Max) @ Id :
6.5V @ 1mA
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Product Category :
Discrete Semiconductor Modules
Factory Lead Time :
30 Weeks
Operating Mode :
ENHANCEMENT MODE
Transistor Application :
SWITCHING
Tradename :
HiPerFET
Pin Count :
4
Polarity/Channel Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Feature :
--
Fall Time (Typ) :
70 ns
Width :
25.42 mm
Mounting Type :
Chassis Mount
Additional Feature :
UL RECOGNIZED, AVALANCHE RATED
DS Breakdown Voltage-Min :
1200 V
Number of Channels :
1 Channel
Input Capacitance (Ciss) (Max) @ Vds :
11100pF @ 25V
Rds On Max :
570 mΩ
Operating Temperature :
-55°C~150°C TJ
Height :
12.22 mm
Input Capacitance :
11.1 nF
Power Dissipation-Max (Abs) :
595 W
FET Type :
N-Channel
Mounting Style :
Chassis Mount
Gate to Source Voltage (Vgs) :
30V
Package :
Tube
JESD-30 Code :
R-PUFM-X4
Max Operating Temperature :
150 °C
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Type :
Polar Power MOSFET HiPerFET
Drain to Source Voltage (Vdss) :
1200V
Gate Charge (Qg) (Max) @ Vgs :
193nC @ 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs (Max) :
±30V
Mount :
Chassis Mount
Published :
2008
Terminal Form :
UNSPECIFIED
Power Dissipation-Max :
595W Tc
Manufacturer :
IXYS
Drain-source On Resistance-Max :
0.57Ohm
Maximum Operating Temperature :
+ 150 C
Rds On (Max) @ Id, Vgs :
570m Ω @ 10A, 10V
Terminal Position :
UPPER
Avalanche Energy Rating (Eas) :
1000 mJ
Continuous Drain Current (ID) :
20A
Drain Current-Max (Abs) (ID) :
20 A
Brand :
IXYS
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
Product Status :
Active
Terminal Finish :
Nickel (Ni)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Pins :
4
Number of Terminals :
4
Transistor Element Material :
SILICON
Product Type :
Discrete Semiconductor Modules
Supplier Device Package :
SOT-227B
Reach Compliance Code :
Compliant
Min Operating Temperature :
-55 °C
Surface Mount :
No
Series :
Polar™
Drain to Source Resistance :
570 mΩ
Power Dissipation (Max) :
595W (Tc)
Package Shape :
RECTANGULAR
Current - Continuous Drain (Id) @ 25°C :
20A Tc
Pbfree Code :
yes
Package / Case :
SOT-227-4, miniBLOC
Qualification Status :
Not Qualified
Number of Terminations :
4
Rise Time :
45ns
Max Power Dissipation :
595 W
Packaging :
Tube
Power Dissipation :
595W
Pulsed Drain Current-Max (IDM) :
50A
Datasheets
IXFN20N120P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFN20N120P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Chassis Mount, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Type:Polar Power MOSFET HiPerFET, Number of Pins:4, Package / Case:SOT-227-4, miniBLOC, Number of Terminations:4, IXFN20N120P pinout, IXFN20N120P datasheet PDF, IXFN20N120P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFN20N120P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFN20N120P


N-Channel Tube 570m Ω @ 10A, 10V ±30V 11100pF @ 25V 193nC @ 10V 1200V SOT-227-4, miniBLOC

IXFN20N120P Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 11100pF @ 25V.This device conducts a continuous drain current (ID) of 20A, which is the maximum continuous current transistor can conduct.Using VGS=1.2kV and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 1.2kV (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 20 A.When the device is turned off, a turn-off delay time of 72 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 50A.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 570 mΩ, which means the device is not biased.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 1200 V.This transistor requires a drain-source voltage (Vdss) of 1200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFN20N120P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 72 ns
based on its rated peak drain current 50A.
single MOSFETs transistor is 570 mΩ
a 1200V drain to source voltage (Vdss)


IXFN20N120P Applications


There are a lot of IXYS
IXFN20N120P applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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