IXFN20N120

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

45ns

Input Capacitance (Ciss) (Max) @ Vds :

7400pF @ 25V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Qualification Status :

Not Qualified

Number of Channels :

1 Channel

Vgs(th) (Max) @ Id :

4.5V @ 8mA

Width :

25.07 mm

Gate to Source Voltage (Vgs) :

30V

Number of Terminals :

4

Product Status :

Active

Minimum Operating Temperature :

- 55 C

Transistor Application :

SWITCHING

Base Product Number :

IXFN20

Transistor Polarity :

N-Channel

Rds On (Max) @ Id, Vgs :

750m Ω @ 500mA, 10V

Package :

Tube

FET Type :

N-Channel

Mounting Style :

Chassis Mount

Continuous Drain Current (ID) :

20A

Vgs (Max) :

±30V

RoHS :

Details

Terminal Form :

UNSPECIFIED

DS Breakdown Voltage-Min :

1200 V

Packaging :

Tube

Drain-source On Resistance-Max :

0.75Ohm

Product Type :

Discrete Semiconductor Modules

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Chassis Mount

Terminal Position :

UPPER

Manufacturer :

IXYS

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

8 Weeks

Additional Feature :

AVALANCHE RATED

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Package / Case :

SOT-227-4, miniBLOC

FET Feature :

--

Surface Mount :

No

Published :

2003

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Nickel (Ni)

Tradename :

HyperFET

Pulsed Drain Current-Max (IDM) :

80A

Number of Elements :

1

Fall Time (Typ) :

20 ns

Pin Count :

4

Transistor Element Material :

SILICON

Maximum Operating Temperature :

+ 150 C

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Subcategory :

Discrete Semiconductor Modules

Drain to Source Breakdown Voltage :

1.2kV

Supplier Device Package :

SOT-227B

Avalanche Energy Rating (Eas) :

2000 mJ

Package Shape :

RECTANGULAR

Drain to Source Voltage (Vdss) :

1200V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

4

Number of Pins :

4

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

75 ns

Height :

9.6 mm

Power Dissipation-Max :

780W Tc

Power Dissipation (Max) :

780W (Tc)

Mounting Type :

Chassis Mount

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Polarity/Channel Type :

N-Channel

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PUFM-X4

Product Category :

Discrete Semiconductor Modules

Brand :

IXYS

Pbfree Code :

yes

Product :

Power MOSFET Modules

Series :

HiPerFET™

Reach Compliance Code :

Compliant

Power Dissipation :

780W

Length :

38.2 mm