IXFN200N07

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Current Rating :

200A

Package Shape :

RECTANGULAR

ECCN Code :

EAR99

Vgs (Max) :

±20V

Resistance :

6mOhm

Base Product Number :

IXFN200

FET Type :

N-Channel

Power Dissipation-Max (Abs) :

520 W

DS Breakdown Voltage-Min :

70 V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Channels :

1 Channel

Nominal Vgs :

4 V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Packaging :

Tube

Drain to Source Breakdown Voltage :

70V

Length :

38.23 mm

Drain to Source Voltage (Vdss) :

70V

REACH SVHC :

No SVHC

Additional Feature :

AVALANCHE RATED

Input Capacitance (Ciss) (Max) @ Vds :

9000pF @ 25V

Rise Time :

60ns

Power Dissipation Ambient-Max :

520 W

Gate Charge (Qg) (Max) @ Vgs :

480nC @ 10V

Number of Terminations :

4

Avalanche Energy Rating (Eas) :

2000 mJ

Rds On (Max) @ Id, Vgs :

6m Ω @ 500mA, 10V

Product Status :

Not For New Designs

Manufacturer :

IXYS

Pin Count :

4

Package / Case :

SOT-227-4, miniBLOC

Maximum Operating Temperature :

+ 150 C

Package :

Tube

Case Connection :

Isolated

Power Dissipation :

520W

Threshold Voltage :

4V

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

520W Tc

Current - Continuous Drain (Id) @ 25°C :

200A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation (Max) :

520W (Tc)

JESD-30 Code :

R-PUFM-X4

Supplier Device Package :

SOT-227B

Gate to Source Voltage (Vgs) :

20V

Brand :

IXYS

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Chassis Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Isolation Voltage :

2.5kV

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Weight :

44g

Voltage - Rated DC :

70V

Width :

25.42 mm

Mount :

Chassis Mount

Mounting Style :

Chassis Mount

Drain Current-Max (Abs) (ID) :

200 A

Terminal Position :

UPPER

Lead Free :

Lead Free

Fall Time (Typ) :

60 ns

Terminal Finish :

Nickel (Ni)

Recovery Time :

250 ns

Product Type :

Discrete Semiconductor Modules

Dual Supply Voltage :

70V

Turn-Off Delay Time :

100 ns

RoHS :

Details

Polarity/Channel Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

600A

Transistor Application :

SWITCHING

Reach Compliance Code :

Compliant

Termination :

Screw

Number of Pins :

3

Surface Mount :

No

Product :

Power MOSFET Modules

Minimum Operating Temperature :

- 55 C

Tradename :

HyperFET

FET Feature :

--

Moisture Sensitivity Level (MSL) :

Not Applicable

Continuous Drain Current (ID) :

200A

Published :

2003

Number of Terminals :

4

Number of Elements :

1

Transistor Polarity :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 8mA

Factory Lead Time :

8 Weeks

Height :

9.6 mm

Drain-source On Resistance-Max :

0.006 Ω

Terminal Form :

UNSPECIFIED

Series :

HiPerFET™

Product Category :

Discrete Semiconductor Modules