IXFN200N07
- Mfr.Part #
- IXFN200N07
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 70V 200A SOT-227B
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- SOT-227-4, miniBLOC
- RoHS Status :
- ROHS3 Compliant
- Maximum Operating Temperature :
- + 150 C
- Current Rating :
- 200A
- Terminal Form :
- UNSPECIFIED
- Recovery Time :
- 250 ns
- Length :
- 38.23 mm
- Product Category :
- Discrete Semiconductor Modules
- Package Shape :
- RECTANGULAR
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Factory Lead Time :
- 8 Weeks
- Drain to Source Breakdown Voltage :
- 70V
- Drain-source On Resistance-Max :
- 0.006 Ω
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Weight :
- 44g
- Vgs (Max) :
- ±20V
- Drain Current-Max (Abs) (ID) :
- 200 A
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 4
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PUFM-X4
- Polarity/Channel Type :
- N-Channel
- Mount :
- Chassis Mount
- FET Type :
- N-Channel
- Width :
- 25.42 mm
- FET Feature :
- --
- Rise Time :
- 60ns
- Power Dissipation :
- 520W
- Tradename :
- HyperFET
- Power Dissipation Ambient-Max :
- 520 W
- Isolation Voltage :
- 2.5kV
- Additional Feature :
- AVALANCHE RATED
- Current - Continuous Drain (Id) @ 25°C :
- 200A Tc
- Number of Elements :
- 1
- Transistor Polarity :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Manufacturer :
- IXYS
- Product :
- Power MOSFET Modules
- Vgs(th) (Max) @ Id :
- 4V @ 8mA
- Power Dissipation-Max (Abs) :
- 520 W
- Drain to Source Voltage (Vdss) :
- 70V
- Terminal Position :
- UPPER
- Terminal Finish :
- Nickel (Ni)
- Input Capacitance (Ciss) (Max) @ Vds :
- 9000pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 480nC @ 10V
- Packaging :
- Tube
- Mounting Type :
- Chassis Mount
- Continuous Drain Current (ID) :
- 200A
- Height :
- 9.6 mm
- Mounting Style :
- Chassis Mount
- Rds On (Max) @ Id, Vgs :
- 6m Ω @ 500mA, 10V
- Series :
- HiPerFET™
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Fall Time (Typ) :
- 60 ns
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 520W Tc
- DS Breakdown Voltage-Min :
- 70 V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate to Source Voltage (Vgs) :
- 20V
- Turn-Off Delay Time :
- 100 ns
- Product Status :
- Not For New Designs
- Threshold Voltage :
- 4V
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Resistance :
- 6mOhm
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Nominal Vgs :
- 4 V
- Product Type :
- Discrete Semiconductor Modules
- Dual Supply Voltage :
- 70V
- Package :
- Tube
- Voltage - Rated DC :
- 70V
- Operating Mode :
- ENHANCEMENT MODE
- Termination :
- Screw
- Published :
- 2003
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Brand :
- IXYS
- Number of Channels :
- 1 Channel
- Power Dissipation (Max) :
- 520W (Tc)
- Pulsed Drain Current-Max (IDM) :
- 600A
- Surface Mount :
- No
- Number of Terminals :
- 4
- RoHS :
- Details
- Base Product Number :
- IXFN200
- Minimum Operating Temperature :
- - 55 C
- Supplier Device Package :
- SOT-227B
- Qualification Status :
- Not Qualified
- Pin Count :
- 4
- Reach Compliance Code :
- Compliant
- Case Connection :
- Isolated
- Datasheets
- IXFN200N07

N-Channel Tube 6m Ω @ 500mA, 10V ±20V 9000pF @ 25V 480nC @ 10V 70V SOT-227-4, miniBLOC
IXFN200N07 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 2000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 9000pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 200A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 70V, and this device has a drainage-to-source breakdown voltage of 70VV.Drain current refers to the maximum continuous current a device can conduct, and it is 200 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 100 ns.Peak drain current is 600A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.Normal operation requires that the DS breakdown voltage remain above 70 V.For this transistor to work, a voltage 70V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFN200N07 Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 200A
a drain-to-source breakdown voltage of 70V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 600A.
a threshold voltage of 4V
a 70V drain to source voltage (Vdss)
IXFN200N07 Applications
There are a lot of IXYS
IXFN200N07 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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