IXFN200N07

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1 Channel

Width :

25.42 mm

Maximum Operating Temperature :

+ 150 C

Fall Time (Typ) :

60 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

200 A

Supplier Device Package :

SOT-227B

Resistance :

6mOhm

Power Dissipation (Max) :

520W (Tc)

Mount :

Chassis Mount

Pulsed Drain Current-Max (IDM) :

600A

Length :

38.23 mm

Height :

9.6 mm

Polarity/Channel Type :

N-Channel

Nominal Vgs :

4 V

Product Status :

Not For New Designs

Moisture Sensitivity Level (MSL) :

Not Applicable

Additional Feature :

AVALANCHE RATED

Termination :

Screw

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Lead Free :

Lead Free

Pin Count :

4

Package / Case :

SOT-227-4, miniBLOC

Avalanche Energy Rating (Eas) :

2000 mJ

Voltage - Rated DC :

70V

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

70 V

Input Capacitance (Ciss) (Max) @ Vds :

9000pF @ 25V

Drain to Source Breakdown Voltage :

70V

Drain-source On Resistance-Max :

0.006 Ω

Rise Time :

60ns

Gate to Source Voltage (Vgs) :

20V

REACH SVHC :

No SVHC

Terminal Position :

UPPER

Dual Supply Voltage :

70V

Minimum Operating Temperature :

- 55 C

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

No

Transistor Polarity :

N-Channel

Power Dissipation-Max :

520W Tc

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

Compliant

Packaging :

Tube

Transistor Application :

SWITCHING

Published :

2003

FET Feature :

--

Current Rating :

200A

Current - Continuous Drain (Id) @ 25°C :

200A Tc

Tradename :

HyperFET

Product Category :

Discrete Semiconductor Modules

RoHS :

Details

Weight :

44g

Recovery Time :

250 ns

Power Dissipation :

520W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

UNSPECIFIED

Package Shape :

RECTANGULAR

Continuous Drain Current (ID) :

200A

Package :

Tube

Number of Terminals :

4

Number of Pins :

3

Mounting Style :

Chassis Mount

Factory Lead Time :

8 Weeks

Product Type :

Discrete Semiconductor Modules

JESD-30 Code :

R-PUFM-X4

Mounting Type :

Chassis Mount

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Nickel (Ni)

Case Connection :

Isolated

Power Dissipation Ambient-Max :

520 W

Pbfree Code :

yes

Isolation Voltage :

2.5kV

Operating Mode :

ENHANCEMENT MODE

Base Product Number :

IXFN200

Threshold Voltage :

4V

Power Dissipation-Max (Abs) :

520 W

Rds On (Max) @ Id, Vgs :

6m Ω @ 500mA, 10V

Turn-Off Delay Time :

100 ns

Brand :

IXYS

Manufacturer :

IXYS

FET Type :

N-Channel

Vgs (Max) :

±20V

Series :

HiPerFET™

Vgs(th) (Max) @ Id :

4V @ 8mA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

480nC @ 10V

Product :

Power MOSFET Modules

Drain to Source Voltage (Vdss) :

70V

Number of Terminations :

4