IXFN200N07

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Mfr.Part #
IXFN200N07
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 70V 200A SOT-227B
Stock
1
In Stock :
1

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Package / Case :
SOT-227-4, miniBLOC
RoHS Status :
ROHS3 Compliant
Maximum Operating Temperature :
+ 150 C
Current Rating :
200A
Terminal Form :
UNSPECIFIED
Recovery Time :
250 ns
Length :
38.23 mm
Product Category :
Discrete Semiconductor Modules
Package Shape :
RECTANGULAR
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Factory Lead Time :
8 Weeks
Drain to Source Breakdown Voltage :
70V
Drain-source On Resistance-Max :
0.006 Ω
Avalanche Energy Rating (Eas) :
2000 mJ
Weight :
44g
Vgs (Max) :
±20V
Drain Current-Max (Abs) (ID) :
200 A
Operating Temperature :
-55°C~150°C TJ
Number of Terminations :
4
ECCN Code :
EAR99
Transistor Element Material :
SILICON
JESD-30 Code :
R-PUFM-X4
Polarity/Channel Type :
N-Channel
Mount :
Chassis Mount
FET Type :
N-Channel
Width :
25.42 mm
FET Feature :
--
Rise Time :
60ns
Power Dissipation :
520W
Tradename :
HyperFET
Power Dissipation Ambient-Max :
520 W
Isolation Voltage :
2.5kV
Additional Feature :
AVALANCHE RATED
Current - Continuous Drain (Id) @ 25°C :
200A Tc
Number of Elements :
1
Transistor Polarity :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Manufacturer :
IXYS
Product :
Power MOSFET Modules
Vgs(th) (Max) @ Id :
4V @ 8mA
Power Dissipation-Max (Abs) :
520 W
Drain to Source Voltage (Vdss) :
70V
Terminal Position :
UPPER
Terminal Finish :
Nickel (Ni)
Input Capacitance (Ciss) (Max) @ Vds :
9000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs :
480nC @ 10V
Packaging :
Tube
Mounting Type :
Chassis Mount
Continuous Drain Current (ID) :
200A
Height :
9.6 mm
Mounting Style :
Chassis Mount
Rds On (Max) @ Id, Vgs :
6m Ω @ 500mA, 10V
Series :
HiPerFET™
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Pins :
3
Fall Time (Typ) :
60 ns
REACH SVHC :
No SVHC
Transistor Application :
SWITCHING
Power Dissipation-Max :
520W Tc
DS Breakdown Voltage-Min :
70 V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Gate to Source Voltage (Vgs) :
20V
Turn-Off Delay Time :
100 ns
Product Status :
Not For New Designs
Threshold Voltage :
4V
Moisture Sensitivity Level (MSL) :
Not Applicable
Resistance :
6mOhm
Configuration :
SINGLE WITH BUILT-IN DIODE
Nominal Vgs :
4 V
Product Type :
Discrete Semiconductor Modules
Dual Supply Voltage :
70V
Package :
Tube
Voltage - Rated DC :
70V
Operating Mode :
ENHANCEMENT MODE
Termination :
Screw
Published :
2003
Lead Free :
Lead Free
Pbfree Code :
yes
Brand :
IXYS
Number of Channels :
1 Channel
Power Dissipation (Max) :
520W (Tc)
Pulsed Drain Current-Max (IDM) :
600A
Surface Mount :
No
Number of Terminals :
4
RoHS :
Details
Base Product Number :
IXFN200
Minimum Operating Temperature :
- 55 C
Supplier Device Package :
SOT-227B
Qualification Status :
Not Qualified
Pin Count :
4
Reach Compliance Code :
Compliant
Case Connection :
Isolated
Datasheets
IXFN200N07
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFN200N07 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SOT-227-4, miniBLOC, Operating Temperature:-55°C~150°C TJ, Number of Terminations:4, Mounting Type:Chassis Mount, Number of Pins:3, Number of Channels:1 Channel, IXFN200N07 pinout, IXFN200N07 datasheet PDF, IXFN200N07 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFN200N07 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFN200N07


N-Channel Tube 6m Ω @ 500mA, 10V ±20V 9000pF @ 25V 480nC @ 10V 70V SOT-227-4, miniBLOC

IXFN200N07 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 2000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 9000pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 200A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 70V, and this device has a drainage-to-source breakdown voltage of 70VV.Drain current refers to the maximum continuous current a device can conduct, and it is 200 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 100 ns.Peak drain current is 600A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.Normal operation requires that the DS breakdown voltage remain above 70 V.For this transistor to work, a voltage 70V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFN200N07 Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 200A
a drain-to-source breakdown voltage of 70V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 600A.
a threshold voltage of 4V
a 70V drain to source voltage (Vdss)


IXFN200N07 Applications


There are a lot of IXYS
IXFN200N07 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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