IXFN180N20

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Product Status :

Not For New Designs

Dual Supply Voltage :

200V

Terminal Finish :

Nickel (Ni)

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Transistor Polarity :

N-Channel

Height :

9.6 mm

Polarity/Channel Type :

N-Channel

DS Breakdown Voltage-Min :

200 V

Case Connection :

Isolated

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

No

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

4V

Drain-source On Resistance-Max :

0.01 Ω

Number of Channels :

1 Channel

Terminal Form :

UNSPECIFIED

Voltage - Rated DC :

200V

Power Dissipation (Max) :

700W (Tc)

Terminal Position :

UPPER

Termination :

Screw

Turn-Off Delay Time :

180 ns

REACH SVHC :

No SVHC

Supplier Device Package :

SOT-227B

Mounting Type :

Chassis Mount

Input Capacitance (Ciss) (Max) @ Vds :

22000pF @ 25V

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

200V

Rds On (Max) @ Id, Vgs :

10m Ω @ 500mA, 10V

Avalanche Energy Rating (Eas) :

4000 mJ

Resistance :

10MOhm

Nominal Vgs :

4 V

Maximum Operating Temperature :

+ 150 C

Width :

25.42 mm

Drain to Source Voltage (Vdss) :

200V

Number of Pins :

3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Weight :

46g

Rise Time :

85ns

Operating Mode :

ENHANCEMENT MODE

Published :

2000

Qualification Status :

Not Qualified

Fall Time (Typ) :

56 ns

JESD-30 Code :

R-PUFM-X4

Package :

Tube

Drain Current-Max (Abs) (ID) :

180 A

RoHS :

Details

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Style :

Chassis Mount

Moisture Sensitivity Level (MSL) :

Not Applicable

Gate Charge (Qg) (Max) @ Vgs :

660nC @ 10V

Reach Compliance Code :

Compliant

Vgs(th) (Max) @ Id :

4V @ 8mA

Isolation Voltage :

2.5kV

Mount :

Chassis Mount, Screw

Brand :

IXYS

Pbfree Code :

yes

Number of Terminations :

4

Manufacturer :

IXYS

Product Category :

Discrete Semiconductor Modules

Current Rating :

180A

Pulsed Drain Current-Max (IDM) :

720A

Power Dissipation-Max (Abs) :

700 W

Package Shape :

RECTANGULAR

Length :

38.23 mm

Continuous Drain Current (ID) :

180A

Additional Feature :

AVALANCHE RATED

FET Type :

N-Channel

Number of Elements :

1

Transistor Application :

SWITCHING

Product Type :

Discrete Semiconductor Modules

Transistor Element Material :

SILICON

FET Feature :

--

ECCN Code :

EAR99

Package / Case :

SOT-227-4, miniBLOC

Power Dissipation :

700W

Number of Terminals :

4

Minimum Operating Temperature :

- 55 C

Series :

HiPerFET™

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube

Tradename :

HyperFET

Base Product Number :

IXFN180

Vgs (Max) :

±20V

Power Dissipation-Max :

700W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

4