IXFN180N15P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Nickel (Ni)

Product :

Power MOSFET Modules

Mounting Type :

Chassis Mount

Power Dissipation (Max) :

680W (Tc)

Vgs(th) (Max) @ Id :

5V @ 4mA

Channel Type :

N

Number of Terminations :

4

Turn On Delay Time :

30 ns

Number of Elements per Chip :

1

Pulsed Drain Current-Max (IDM) :

380A

DS Breakdown Voltage-Min :

150 V

Drain-source On Resistance-Max :

0.011 Ω

Number of Pins :

4

Element Configuration :

Single

JESD-30 Code :

R-PUFM-X4

Subcategory :

Discrete Semiconductor Modules

Channel Mode :

Enhancement

Configuration :

Single

Package / Case :

SOT-227-4, miniBLOC

Product Category :

Discrete Semiconductor Modules

Mounting Style :

Screw Mounts

Rise Time :

32ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

11mOhm

Number of Elements :

1

Power Dissipation :

680W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Maximum Operating Temperature :

+175 °C

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

11m Ω @ 90A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package :

Box

Pbfree Code :

yes

Package Shape :

RECTANGULAR

Package Type :

SOT-227

Vgs (Max) :

±20V

Height :

9.6mm

Fall Time (Typ) :

36 ns

Drain to Source Voltage (Vdss) :

150V

Tradename :

HiPerFET

Type :

HiPerFET

Factory Lead Time :

24 Weeks

Polarity/Channel Type :

N-Channel

Drain to Source Breakdown Voltage :

150V

Minimum Operating Temperature :

-55 °C

Reach Compliance Code :

Compliant

Current - Continuous Drain (Id) @ 25°C :

150A Tc

FET Feature :

--

Power Dissipation-Max :

680W Tc

Continuous Drain Current (ID) :

150A

Surface Mount :

No

Series :

PolarHT™

Supplier Device Package :

SOT-227B

Threshold Voltage :

5V

RoHS Status :

ROHS3 Compliant

Manufacturer :

IXYS

Qualification :

-

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

UPPER

Operating Temperature :

-55°C~175°C TJ

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

RoHS :

Details

Packaging :

Box

Product Type :

Discrete Semiconductor Modules

Product Status :

Active

Mount :

Chassis Mount, Panel

Input Capacitance (Ciss) (Max) @ Vds :

7000pF @ 25V

REACH SVHC :

No SVHC

Qualification Status :

Not Qualified

Published :

2003

Transistor Element Material :

SILICON

FET Type :

N-Channel

Transistor Application :

SWITCHING

Number of Channels :

1 Channel

Base Product Number :

IXFN180

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminals :

4

Brand :

IXYS

Avalanche Energy Rating (Eas) :

4000 mJ

Terminal Form :

UNSPECIFIED

Continuous Drain Current Id :

150A

Lead Free :

Lead Free

Pin Count :

4

Width :

25.42mm

Case Connection :

Isolated

Transistor Polarity :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

MSL :

-

Length :

38.23mm

Turn-Off Delay Time :

150 ns