IXFN180N10

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

Surface Mount :

No

Tradename :

HiPerFET

Width :

25.42 mm

Rise Time :

90ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

360nC @ 10V

Power Dissipation :

600W

Package / Case :

SOT-227-4, miniBLOC

Lead Free :

Lead Free

Threshold Voltage :

4V

DS Breakdown Voltage-Min :

100 V

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Series :

HiPerFET™

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Product Type :

Discrete Semiconductor Modules

Nominal Vgs :

4 V

Published :

2002

Mount :

Chassis Mount, Screw

Factory Lead Time :

8 Weeks

Supplier Device Package :

SOT-227B

Product Category :

Discrete Semiconductor Modules

Drain to Source Voltage (Vdss) :

100V

Number of Pins :

4

Polarity/Channel Type :

N-Channel

RoHS :

Details

Package :

Tube

Package Shape :

RECTANGULAR

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Nickel (Ni)

Pulsed Drain Current-Max (IDM) :

720A

FET Type :

N-Channel

Number of Terminations :

4

Weight :

42g

Transistor Polarity :

N-Channel

Reach Compliance Code :

Compliant

Pbfree Code :

yes

Fall Time (Typ) :

65 ns

Isolation Voltage :

2.5kV

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

9100pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Recovery Time :

250 ns

Drain Current-Max (Abs) (ID) :

180 A

Mounting Type :

Chassis Mount

Avalanche Energy Rating (Eas) :

3000 mJ

Terminal Position :

UPPER

Resistance :

8mOhm

Dual Supply Voltage :

100V

FET Feature :

--

Type :

HiPerFET

Minimum Operating Temperature :

- 55 C

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 8mA

Packaging :

Tube

Maximum Operating Temperature :

+ 150 C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Termination :

Screw

Additional Feature :

AVALANCHE RATED

Terminal Form :

UNSPECIFIED

Drain to Source Breakdown Voltage :

100V

Number of Channels :

1 Channel

Continuous Drain Current (ID) :

180A

Base Product Number :

IXFN180

Mounting Style :

Screw Mounts

Drain-source On Resistance-Max :

0.008 Ω

Qualification Status :

Not Qualified

Case Connection :

Isolated

Height :

9.6 mm

Transistor Element Material :

SILICON

Length :

38.23 mm

Brand :

IXYS

Vgs (Max) :

±20V

JESD-30 Code :

R-PUFM-X4

Number of Terminals :

4

Product Status :

Active

Number of Elements :

1

Power Dissipation (Max) :

600W (Tc)

Product :

Power MOSFET Modules

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

600W Tc

Turn-Off Delay Time :

140 ns

Rds On (Max) @ Id, Vgs :

8m Ω @ 500mA, 10V

Manufacturer :

IXYS

Power Dissipation-Max (Abs) :

600 W

Pin Count :

4

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant