IXFN180N07

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Mfr.Part #
IXFN180N07
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 70V 180A SOT-227B
Stock
14,285
In Stock :
14,285

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Package / Case :
SOT-227-4, miniBLOC
Power Dissipation (Max) :
520W (Tc)
Minimum Operating Temperature :
- 55 C
Polarity/Channel Type :
N-Channel
Rise Time :
60ns
Drain-source On Resistance-Max :
0.007Ohm
Gate Charge (Qg) (Max) @ Vgs :
480nC @ 10V
Drain to Source Breakdown Voltage :
70V
RoHS :
Details
Pbfree Code :
yes
Product :
Power MOSFET Modules
Terminal Finish :
Nickel (Ni)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Vgs(th) (Max) @ Id :
4V @ 8mA
Package :
Tube
RoHS Status :
RoHS Compliant
Number of Channels :
1 Channel
Terminal Form :
UNSPECIFIED
Transistor Element Material :
SILICON
Pulsed Drain Current-Max (IDM) :
600A
Packaging :
Tube
Current - Continuous Drain (Id) @ 25°C :
180A Tc
Height :
9.6 mm
Mounting Style :
Chassis Mount
Number of Pins :
4
Surface Mount :
No
Drain Current-Max (Abs) (ID) :
180 A
Number of Terminations :
4
Power Dissipation-Max (Abs) :
520 W
Published :
2000
Additional Feature :
AVALANCHE RATED
Product Status :
Obsolete
Supplier Device Package :
SOT-227B
Input Capacitance (Ciss) (Max) @ Vds :
9000pF @ 25V
Drain to Source Voltage (Vdss) :
70V
Avalanche Energy Rating (Eas) :
2000 mJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs (Max) :
±20V
Series :
HiPerFET™
Power Dissipation-Max :
520W Tc
Operating Temperature :
-55°C~150°C TJ
Fall Time (Typ) :
60 ns
Reach Compliance Code :
Compliant
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation :
520W
Configuration :
SINGLE WITH BUILT-IN DIODE
Product Type :
Discrete Semiconductor Modules
Drive Voltage (Max Rds On,Min Rds On) :
10V
Manufacturer :
IXYS
Package Shape :
RECTANGULAR
Continuous Drain Current (ID) :
180A
Maximum Operating Temperature :
+ 150 C
Number of Terminals :
4
DS Breakdown Voltage-Min :
70 V
Pin Count :
4
Length :
38.2 mm
Product Category :
Discrete Semiconductor Modules
Brand :
IXYS
Base Product Number :
IXFN180
Gate to Source Voltage (Vgs) :
20V
JESD-30 Code :
R-PUFM-X4
Terminal Position :
UPPER
Case Connection :
Isolated
Rds On (Max) @ Id, Vgs :
7m Ω @ 500mA, 10V
Operating Mode :
ENHANCEMENT MODE
Width :
25.07 mm
Transistor Application :
SWITCHING
Qualification Status :
Not Qualified
Mounting Type :
Chassis Mount
FET Feature :
--
Turn-Off Delay Time :
100 ns
Mount :
Chassis Mount
Transistor Polarity :
N-Channel
Number of Elements :
1
FET Type :
N-Channel
Datasheets
IXFN180N07
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFN180N07 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SOT-227-4, miniBLOC, Number of Channels:1 Channel, Number of Pins:4, Number of Terminations:4, Operating Temperature:-55°C~150°C TJ, Mounting Type:Chassis Mount, IXFN180N07 pinout, IXFN180N07 datasheet PDF, IXFN180N07 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFN180N07 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFN180N07


N-Channel Tube 7m Ω @ 500mA, 10V ±20V 9000pF @ 25V 480nC @ 10V 70V SOT-227-4, miniBLOC

IXFN180N07 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 2000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 9000pF @ 25V.This device has a continuous drain current (ID) of [180A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=70V, the drain-source breakdown voltage is 70V.A device's drain current is its maximum continuous current, and this device's drain current is 180 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 100 ns.A maximum pulsed drain current of 600A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 70 V.In order to operate this transistor, a voltage of 70V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFN180N07 Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 70V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 600A.
a 70V drain to source voltage (Vdss)


IXFN180N07 Applications


There are a lot of IXYS
IXFN180N07 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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