IXFN180N07
- Mfr.Part #
- IXFN180N07
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 70V 180A SOT-227B
- Stock
- 14,285
- In Stock :
- 14,285
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- SOT-227-4, miniBLOC
- Power Dissipation (Max) :
- 520W (Tc)
- Minimum Operating Temperature :
- - 55 C
- Polarity/Channel Type :
- N-Channel
- Rise Time :
- 60ns
- Drain-source On Resistance-Max :
- 0.007Ohm
- Gate Charge (Qg) (Max) @ Vgs :
- 480nC @ 10V
- Drain to Source Breakdown Voltage :
- 70V
- RoHS :
- Details
- Pbfree Code :
- yes
- Product :
- Power MOSFET Modules
- Terminal Finish :
- Nickel (Ni)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Vgs(th) (Max) @ Id :
- 4V @ 8mA
- Package :
- Tube
- RoHS Status :
- RoHS Compliant
- Number of Channels :
- 1 Channel
- Terminal Form :
- UNSPECIFIED
- Transistor Element Material :
- SILICON
- Pulsed Drain Current-Max (IDM) :
- 600A
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 180A Tc
- Height :
- 9.6 mm
- Mounting Style :
- Chassis Mount
- Number of Pins :
- 4
- Surface Mount :
- No
- Drain Current-Max (Abs) (ID) :
- 180 A
- Number of Terminations :
- 4
- Power Dissipation-Max (Abs) :
- 520 W
- Published :
- 2000
- Additional Feature :
- AVALANCHE RATED
- Product Status :
- Obsolete
- Supplier Device Package :
- SOT-227B
- Input Capacitance (Ciss) (Max) @ Vds :
- 9000pF @ 25V
- Drain to Source Voltage (Vdss) :
- 70V
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Series :
- HiPerFET™
- Power Dissipation-Max :
- 520W Tc
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 60 ns
- Reach Compliance Code :
- Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation :
- 520W
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Product Type :
- Discrete Semiconductor Modules
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Manufacturer :
- IXYS
- Package Shape :
- RECTANGULAR
- Continuous Drain Current (ID) :
- 180A
- Maximum Operating Temperature :
- + 150 C
- Number of Terminals :
- 4
- DS Breakdown Voltage-Min :
- 70 V
- Pin Count :
- 4
- Length :
- 38.2 mm
- Product Category :
- Discrete Semiconductor Modules
- Brand :
- IXYS
- Base Product Number :
- IXFN180
- Gate to Source Voltage (Vgs) :
- 20V
- JESD-30 Code :
- R-PUFM-X4
- Terminal Position :
- UPPER
- Case Connection :
- Isolated
- Rds On (Max) @ Id, Vgs :
- 7m Ω @ 500mA, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Width :
- 25.07 mm
- Transistor Application :
- SWITCHING
- Qualification Status :
- Not Qualified
- Mounting Type :
- Chassis Mount
- FET Feature :
- --
- Turn-Off Delay Time :
- 100 ns
- Mount :
- Chassis Mount
- Transistor Polarity :
- N-Channel
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Datasheets
- IXFN180N07

N-Channel Tube 7m Ω @ 500mA, 10V ±20V 9000pF @ 25V 480nC @ 10V 70V SOT-227-4, miniBLOC
IXFN180N07 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 2000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 9000pF @ 25V.This device has a continuous drain current (ID) of [180A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=70V, the drain-source breakdown voltage is 70V.A device's drain current is its maximum continuous current, and this device's drain current is 180 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 100 ns.A maximum pulsed drain current of 600A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 70 V.In order to operate this transistor, a voltage of 70V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFN180N07 Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 70V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 600A.
a 70V drain to source voltage (Vdss)
IXFN180N07 Applications
There are a lot of IXYS
IXFN180N07 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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